• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.359-359
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• 2007

• Journal of the Korean Society for Precision Engineering
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• v.26 no.6
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• pp.7-13
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.146.1-146.1
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.27-31
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• 2008

We have studied nonvolatile memory properties of MOSFETs with double-stacked Si nanoclusters in the oxide-gate stacks. We formed Si nanoclusters of a uniform size distribution on a 5 nm-thick tunneling oxide layer, followed by a 10 nm-thick intermediate oxide and a second layer of Si nanoclusters by using LPCVD system. We then investigated the memory characteristics of the MOSFET and observed that the charge retention time of a double-stacked Si nanocluster MOSFET was longer than that of a single-layer device. We also found that the double-stacked Si nanocluster MOSFET is suitable for use as a dual-bit memory.

• Polymer Science and Technology
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• v.24 no.4
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• pp.347-351
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• 2013

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.126-127
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1386-1389
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• 2006

In this study, a plasma flat fluorescent lamp having a new structure was fabricated by screen printing technique. Coplanar types of silver electrodes with a dielectric layer were screen-printed on a rear glass plate, and then fired at $550^{\circ}C$ and $580^{\circ}C$, respectively. Phosphor was spin-coated on the dielectric layer with firing at $490^{\circ}C$. Several types of lamps were designed and its properties wee investigated with electrode shape, gas pressure, etc.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.185-185
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• 2015

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.105-108
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• 2006

It has been issued to fabricate nano-scale patterns with large-scale in the field of digital display. Also, large-scale fabrication technology of nano pattern is very important not only for the field of digital display but also for the most of applications of the nano-scale patterns in the view of the productivity. Among the fabrication technologies, UV nano imprinting process is suitable for replicating polymeric nano-scale patterns. However, in case of conventional UV nano imprinting process using flat mold, it is not easy to replicate large areal nano patterns. Because there are several problems such as releasing, uniformity of the replica, mold fabrication and so on. In this study, to overcome the limitation of the conventional UV nano imprinting process, we proposed a continuous UV nano imprinting process using a pattern roll stamper. A pattern roll stamper that has nano-scale patterns was fabricated by attaching thin metal stamper to a roll base. A continuous UV nano imprinting system was designed and constructed. As practical examples of the process, various nano patterns with pattern size of 500, 150 and 50nm were fabricated. Finally, geometrical properties of imprinted nano patterns were measured and analyzed.