• 대한화학회지
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• 제63권6호
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• pp.453-458
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• 2019

Synthesis of ZnCo₂O₃ oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P_2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo₂O₃. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O₂ in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at g_iso ~2.230 and g_iso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co²⁺(3d⁷) in the oxide. DC conductivity value of 2.875 ×10^-8 S/cm indicates very weakly semiconducting nature of ZnCo₂O₃ at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions ⁴T_1g(⁴F)→²E_g(²G), ⁴T_1g(⁴F)→⁴T_1g(⁴P), ⁴T_1g(⁴F)→⁴A_2g(⁴F), ⁴T_1g(⁴F)→⁴T_2g(⁴F), respectively in octahedral ligand field around Co²⁺ ions. Direct band gap energy, E_g~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo₂O₃.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.188.2-188.2
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• 2015

The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.

• 대한화학회지
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• 제46권1호
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• pp.7-13
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• 2002

자화수가 특이한 물리화학적 성질을 갖고 있음은 여러 학자들에 의하여 꾸준히 연구되어 왔는데, 아직도 자화수의 특성이 명확하게 설명되지 못하고 있는 실정이다. 본 연구에서는 자화수가 염류들의 침전반응 및 석고의 가수 경화반응에 미치는 영향을 다음과 같이 관찰하였다. $25^{\circ}C$ 항온조 내부에서 실시한 salt filter assay 방법으로 침전반응을 조사하였으며, $20^{\circ}C$ 실온에서 석고의 가수 경화반응 시간을 Gillmore needle의 방법으로 측정함으로써 석고의 가수 경화 속도를 조사하였다. 0.1M 염 이온들을 반응시킨 염류의 침전 반응 결과, $BaSO_4,\;BaCO_3,\;CaCO_3$의 침전 생성물의 양은 대조군의 증류수에 비하여 자화수에서 각각 약 3.6%, 3.8%, 4.4% 씩 증가되었으며, 석고의 최종 경화시간은 대조군의 증류수에 비하여 자화수에서 현저하게 감소되었으므로 자화수가 석고의 가수 경화속도를 촉진시키는 것으로 나타났다. 이는 대조군의 증류수에 비하여 자화수는 물분자가 치밀하게 구조화되어서 수많은 cluster들을 형성함으로서 물분자 사이의 결합 및 반응력이 증가되며, $Ba^{2+}$ 또는 $Ca^{2+}$ 같은 염류들에 대하여 특징적으로 반응해 침전반응 속도와 가수 경화 반응 속도가 증가된 것으로 추측된다.

• 한국재료학회지
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• 제19권2호
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• 한국지반환경공학회 논문집
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• 제16권11호
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• pp.13-19
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• 2015

우리 주변에서 가장 흔한 재료인 흙을 이용한 건설재료는 많은 장점에도 불구하고 장기적인 내구성과 보도로서의 보행감 등이 포장재로써 문제시되어 다짐 후 사용하거나 강도보강용으로 석회나 시멘트 등 다양한 고화재를 혼합하여 포장용으로 사용하고 있다. 그러나 친환경 고화재나 기타 보행성을 증가시키기 위한 혼합재가 포함된 포장재의 거동에 대한 연구는 아직 미진한 상황이다. 따라서 본 연구에서는 친환경 고화재와 목재칩과 같은 자연재료를 이용한 혼합토를 이용한 포장재의 적정 배합비와 현장적용 특성을 평가하기 위해 역학시험을 통해 합리적인 배합비를 평가하고 현장 적용성을 평가하기 위해 탄성도시험인 볼 테스트를 수행하였다. 시험결과 목재칩의 함량은 1.5% 이하에서 구조물의 목적에 따라 선택하고 고화재는 10~15% 함량의 범위 내에서 결정하며, 보행성을 표현하는 GB 계수/SB 계수 비의 평가결과, 보행감을 고려한 고화재의 비율은 15% 이하의 값이 적합하나 목재칩의 비율에 따라 상이한 배합비의 선정이 필요할 것으로 판단된다.

• 대한토목학회논문집
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• 제36권4호
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• pp.705-713
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• 2016

연약지반 공사는 설계단계에서 고려하지 못한 변수들이 시공단계에서 발생되어 구조물의 안정성과 설계변경에 따른 공사비 증가의 원인이 된다. 본 연구는 충청북도 오창지역에 조성되는 산업단지 진입도로 조성구간을 연구대상으로 하며, 연약지반 처리공법으로 암버럭을 이용한 치환공법 및 사용하중을 고려한 과재성토를 연약지반 처리대책으로 선정, 구조물의 안정성 및 공기 단축으로 공사비 절감효과 분석에 목적이 있다. 연구구간의 연약지반 두께는 사질토 및 점성토 연약지반으로 2.4~5.5m로 규모가 작으나 지표하 1.5~5.9m의 지층사이에 불균등하게 분포하며, 침하발생은 크지 않으나 장래 부등침하와 단차 발생이 예상되어 연약지반 처리후 현장 계측결과를 분석하여 장래 침하거동을 예측하였다. 또한, 치환재료는 지역특성 및 경제성을 고려하여 양질토사를 암버럭으로 치환하여 안정성 증가, 공기단축 등으로 공사비 29%를 절감하였다. 본 연구를 바탕으로 향후 제체내 간극수압 소산, 지하수위 변동 등의 예측과 실제 계측된 연약지반의 압밀과의 관계 등에 대한 추가적인 연구를 수행할 경우, 다양한 현장조건에서 연약지반 거동을 정확히 예측할 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.260-260
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• 2013

Multiferroic materials have attracted much attention due to their fascinating fundamental physical properties and technological applications in magnetic/ferroelectric data-storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3 $ is a typical multiferroic material with a room temperature magnetoelectric coupling in view of high magnetic-and ferroelectric-ordering temperatures (Neel temperature $T_N$~647 K and Curie temperature $T_C$~1,103 K). Rare-earth ion substitution at the Bi sties is very interesting, which induces suppressed volatility of Bi ion and improved ferroelectric properties. At the same time, Fe-site substitution with magnetic ions is also attracting, and the enhanced ferromagnetism was reported. In this study, $Bi_{1-x}Dy_xFe_{0.95}Co_{0.05}O_3$ (x=0, 0.05 and 0.1) bulk ceramic compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ or 24 h to produce $Bi_{1-x}Dy_xFe_{0.95}Co_{0.05}O_3$. The samples were immediately put into an oven, which was heated up to $800^{\circ}C$ nd sintered in air for 30 min. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies).

• 한국염색가공학회지
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• 제28권1호
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• pp.48-56
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• 2016

Improvement of heat sink technology related to the continuous implementation performance and extension of device-life in circumstance of easy heating and more compact space has been becoming more important issue as multi-functional integration and miniaturization trend of electronic gadgets and products has been generalized. In this study, it purposed to minimize of decline of the heat diffusivity by gluing polymer through compounding of inorganic particles which have thermal conductive properties. We used NH-9300 as base resin and used inorganic fillers such as silicon carbide(SiC), aluminum nitride(AlN), and boron nitride(BN) to improve heat diffusivity. After making film which was made from 100 part of acrylic resin mixed hardener(1.0 part more or less) with inorganic particles. The film was matured at $80^{\circ}C$ for 24h. Diffusivity were tested according to sorts of particles and density of particles as well as size and structure of particle to improve the effect of heat sink in view of morphology assessing diffusivity by LFA(Netzsch/LFA 447 Nano Flash) and adhesion strength by UTM(Universal Testing Machine). The correlation between diffusivity of pure inorganic particles and composite as well as the relation between density and morphology of inorganic particles has been studied. The study related morphology showed that globular type had superior diffusivity at low density of 25% but on the contarary globular type was inferior to non-globular type at high density of 80%.

• 한국산학기술학회논문지
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• 제19권8호
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• pp.14-18
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• 2018

일반적으로 반도체소자의 이동도를 높이기 위하여 반도체소자에서 옴접촉이 중요하게 다루어진다. 반도체 구조의 PN접합은 공핍층을 포함하고 있으며, 공핍층은 전기적인 비선형을 유도하고 쇼키접압을 만들어내는 반도체 고유의 물리적인 특징이다. 본 연구에서는 절연막이 전도성에 미치는 효과를 조사하기 위해서 $SiO_2$ 박막과 $V_2O_5/SiO_2$ 박막의 전기적인 특성을 비교하여 조사하였다. 미소전계영역에서 $SiO_2$ 절연막의 전기적인 특성으로부터 비선형 쇼키접합을 이루고 있는 것을 확인하였으며, 그 위에 증착된 $V_2O_5$ 박막은 오믹특성을 갖는 것을 확인하였다. 절연막의 PN 접합에 의한 쇼키접합 특성이 누설전류를 차단하여 $V_2O_5$ 박막의 전도성을 우수하게 만들었다. 양의 전압에서 $SiO_2$ 박막의 커패시턴스 값은 매우 낮았으나 $V_2O_5$ 박막의 커패시턴스 값은 전압이 증가할수록 증가하였다. 일반적인 전계영역에서 $SiO_2$ 박막의 절연 효과에 의해 $V_2O_5$ 박막의 전도성이 증가하는 것을 확인하였다. 절연박막은 공핍층의 효과를 이용하는 쇼키접합을 갖게 되며, 반도체에서의 쇼키접합은 전도성을 높이는 효과가 있는 것을 확인하였다.