• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.134-134
• /
• 2009

In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.103-103
• /
• 2009

본 논문에서는 기존의 GST(GeSbTe=2:2:5)와 비교하여 상변화 재료로서의 Ga 도핑된 $Ge_2Sb_2Te_5$의 가능성을 확인하고자 하였다. 실험에 사용된 Ga 도핑된 $Ge_2Sb_2Te_5$ 박막은 전통적 melt-quenching 방법에 의해 비정질로 제작된 벌크를 Thermal evaporation을 통하여 Si(100) 및 유리 (coming glass, 7059) 기판 위에 200nm의 두께로 증착하여 제작하였다. 각 박막의 상변화 특성은 여러 온도에서 열처리된 박막을 X-ray diffraction (XRD) 측정을 통하여 확인하였다. 각 조성 박막의 비정질-결정질 상변화속도 비교를 위하여 나노-펄스 스캐너 (nano-pulse scanner)를 사용하여 power; 1~17mW, pulse duration; 10~460ns 범위에서 박막의 상변화에 따른 반사도 차이를 측정 분석하였다. Ga의 도핑농도에 따른 전기적 특성 차이를 확인하기 위하여 4-point probe를 이용하여 박막의 면 저항을 측정하였고 또한 hall 측정을 통하여 박막의 흘 계수, 흘 농도 및 이동도를 확인하고 Ga가 상전이에 미치는 영향에 대하여 분석하였다.

• 대한기계학회논문집A
• /
• 제26권3호
• /
• pp.537-543
• /
• 2002

This paper examines a new in-process measurement system for the measurement of micro-defects on the surfaces of brittle materials by using the AFM (Atomic Force Microscopy). A new AFM scanning stage that can also perform nano-scale bending of the sample was developed by adding a bending unit to a commercially available AFM scanner. The bending unit consists of a PZT actuator and sample holder, and can perform static and cyclic three-point bending. The true bending displacement of the bending unit is approximately 1.8mm when 80 volts are applied to the PZT actuator. The frequency response of the bending unit and the stress on the sample were also analyzed, both theoretically and experimentally. Potential surface defects of the sample were successfully detected by this measurement system. It was confirmed that the number of micro-defects on a scratched surface increases when the surface is subjected to a cyclic bending load.

• 한국산학기술학회:학술대회논문집
• /
• 한국산학기술학회 2010년도 추계학술발표논문집 2부
• /
• pp.638-641
• /
• 2010

본 논문에서는 나노 분해능을 가지면서 수mm의 이송능력을 가지는 AFM용 스캐너의 구현을 위하여 새로운 형태의 더블-벤트 유연 가이드를 연구하였다. Castigliano 이론을 이용하여 유연 가이드의 강성을 구하였으며, 모든 과정은 FEA(Finite Element Analysis)를 통하여 이론의 타당성을 검증하였다. 또한, 더블-벤트 유연 가이드의 성능 검증을 위하여 평면 스캐너의 모델링에 응용하여 보았다. 응용된 평면 스캐너의 구성 요소 성분 변수들은 Double-bent 유연 가이드의 나노 분해능 및 이송 변위의 최대화를 구현함과 동시에 빠른 응답 속도를 보장하기 위해 최적화 설계를 통하여 이루어졌다. 더블-벤트 유연 가이드를 적용한 평면 스캐너 역시 FEA를 통한 검증 단계를 거쳤다.

• 한국산학기술학회:학술대회논문집
• /
• 한국산학기술학회 2011년도 추계학술논문집 2부
• /
• pp.409-412
• /
• 2011

본 논문에서는 나노 분해능을 가지면서 수mm의 이송능력을 가지는 AFM용 스캐너의 구현을 위하여 새로운 형태의 더블-벤트 유연 가이드를 연구하였다. Castigliano 이론을 이용하여 유연 가이드의 강성을 구하였으며, 모든 과정은 FEA(Finite Element Analysis)를 통하여 이론의 타당성을 검증하였다. 또한, 더블-벤트 유연 가이드의 성능 검증을 위하여 평면 스캐너의 모델링에 응용하여 보았다. 응용된 평면 스캐너의 구성 요소 성분 변수들은 Double-bent 유연 가이드의 나노 분해능 및 이송 변위의 최대화를 구현함과 동시에 빠른 응답 속도를 보장하기 위해 최적화 설계를 통하여 이루어졌다. 더블-벤트 유연 가이드를 적용한 평면 스캐너 역시 FEA를 통한 검증 단계를 거쳤다.

• The Journal of Advanced Prosthodontics
• /
• 제13권5호
• /
• pp.281-291
• /
• 2021

PURPOSE. To evaluate the wear of computer-aided design/computer-aided manufacturing (CAD-CAM) dental ceramic materials opposed by enamel as a function of increased chewing forces. MATERIALS AND METHODS. The enamel cusps of healthy human third molar teeth (n = 40) opposed by materials from CAD-CAM dental ceramic groups (n = 10), including Vita Enamic^® (ENA), a polymer-infiltrated ceramic network (PICN); GC Cerasmart^® (CERA), a resin nanoceramic; Celtra^® Duo (DUO), a zirconia-reinforced lithium silicate (ZLS) ceramic; and IPS e.max ZirCAD (ZIR), a polycrystalline zirconia, were exposed to chewing simulation (1,200,000 cycles; 120 N load; 1 Hz frequency; 0.7 mm lateral and 2 mm vertical motion). The wear of both enamel cusps and materials was quantified using a 3D laser scanner, and the wear mechanisms were evaluated by scanning electron microscopy (SEM). The results were analysed using Welch ANOVA and Kruskal Wallis test (α = .05). RESULTS. ZIR showed lower volume loss (0.02 ± 0.01 mm³) than ENA, CERA and DUO (P = .001, P = .018 and P = .005, respectively). The wear of cusp/DUO [0.59 mm³ (0.50-1.63 mm³)] was higher than cusp/CERA [0.17 mm³ (0.04-0.41 mm³)] (P = .007). ZIR showed completely different wear mechanism in SEM. CONCLUSION. Composite structured materials such as PICN and ZLS ceramic exhibit more abrasive effect on opposing enamel due to their loss against wear, compared to uniform structured zirconia. The resin nano-ceramic causes the lowest enamel wear thanks to its flexible nano-ceramic microstructure. While zirconia appears to be an enamel-friendly material in wear volume loss, it can cause microstructural defects of enamel.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2007년도 추계학술대회논문집
• /
• pp.1276-1279
• /
• 2007

The main objectives of the Load/Unload are no slider-disk contact and no media damage. But, it remains unsolved technical problems on the unloading process. While the slider climbs up the ramp at the outer edge of the disk, the possibility of the slider-disk contact by lift-off force and rebound of the slider increases. Keeping in mind of these points, to prevent the slider-disk contact, we apply the disk bump on disk outer edge proceeding unload. First, referring to the simulation results, we select the optimal bump shapes to improve unload performance by unload analysis. Second, the disk bump is mechanically manufactured by pressing disk surface using tungsten tips. The bumps are variously processed by changing pressing pressure of tungsten tips. After confirming bump shape by nano-scanner, the optimal bump shape is applied to experimental unload process. Through this experiment, it is conformed that the unload performance was improved by using the optimal disk bump to prevent the slider-disk contact.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2007년도 춘계학술대회논문집
• /
• pp.833-836
• /
• 2007

Load/Unload technology has more benefits than the conventional CSS technology. However, it remains unsolved technical problem on the unloading process. While the slider climbs up the ramp at the outer edge of the disk, the possibility of the slider-disk contact by lift-off force and rebound of the slider increases. This paper focuses on no slider-disk contact. To prevent the slider-disk contact, we apply the disk bump on disk outer edge proceeding unload. Firstly, in the simulation, the bump dimension is determined by changing bump design parameters. Secondly, dynamic stability of slider have to be checked on disk bump before unload analysis, and unload analysis is performed by applying stable bump shapes to unload simulation. Thirdly, we select optimal bump shape to improve unload performance by unload analysis. Finally, in the experiment, the disk bump is mechanically manufactured by pressing disk surface using diamond tip. That is variously processed by changing pressing pressure. After confirming bump shape by nano-scanner, proper bump shape is applied to real experimental unload process. Through this investigation, we propose the optimal bump design to prevent the slider-disk contact, and then we can realize improved unloading performance.

• 한국전기전자재료학회논문지
• /
• 제21권7호
• /
• pp.629-637
• /
• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.21-22
• /
• 2008

In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.