• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.83-86
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• 2002

Nanoscopic emission from periodic nano-hole arrays in thick metal films is studied experimentally. The experiments give direct evidence for SP excitations in such structures. We show that the symmetry of the emission is governed by polarization and its shape is defined the interference of SP waves of different diffraction orders. Near-Held pattern analysis combined with the far-Held reflection and transmission measurements suggests that the SP eigenmodes of these arrays may be understood as those of ionic plasmon molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.73-74
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• 2007

We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.

• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.1
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• pp.23-33
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• 2011

This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.

• Advances in nano research
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• v.2 no.1
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• pp.1-14
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• 2014

Dislocations are basic crystal defects and represent one-dimensional native nanostructures embedded in a perfect crystalline matrix. Their structure is predefined by crystal symmetry. Two-dimensional, self-organized arrays of such nanostructures are realized reproducibly using specific preparation conditions (semiconductor wafer direct bonding). This technique allows separating dislocations up to a few hundred nanometers which enables electrical measurements of only a few, or, in the ideal case, of an individual dislocation. Electrical properties of dislocations in silicon were measured using MOSFETs as test structures. It is shown that an increase of the drain current results for nMOSFETs which is caused by a high concentration of electrons on dislocations in p-type material. The number of electrons on a dislocation is estimated from device simulations. This leads to the conclusion that metallic-like conduction exists along dislocations in this material caused by a one-dimensional carrier confinement. On the other hand, measurements of pMOSFETs prepared in n-type silicon proved the dominant transport of holes along dislocations. The experimentally measured increase of the drain current, however, is here not only caused by an higher hole concentration on these defects but also by an increasing hole mobility along dislocations. All the data proved for the first time the ambipolar behavior of dislocations in silicon. Dislocations in p-type Si form efficient one-dimensional channels for electrons, while dislocations in n-type material cause one-dimensional channels for holes.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.1-47.1
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• 2011

We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.715-719
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• 2009

The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this study. We manufactured the electrode board using Aluminum first that is widely used in conventional semiconductor device process. Without further treatment, these aluminum electrodes tend to contain voids in PETEOS(plasma enhanced tetraethyoxysilane) material that are easily detected by cross-sectional SEM(Scanning Electron Microscope). The voids can be easily attacked and transformed into holes in between PETEOS and electrodes after etch back and washing process. In order to resolve this issue of Al electrode board, we developed a electrode board manufacturing method using low resistivity TiN, which has advantages in terms of the step-coverage of phase change($Ge_2Sb_2Te_5$, GST) thin film as well as thermodynamic stability, without etch back and washing process. This TiN material serves as the top and bottom electrode in PRAM(Phase-change Random Access Memory). The good connection between the TiN electrode and GST thin film was confirmed by observing the cross-section of TiN electrode board using SEM. The resistances of amorphous and crystalline GST thin film on TiN electrodes were also measured, and 1000 times difference between the amorphous and crystalline resistance of GST thin film was obtained, which is well enough for the signal detection.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.541-548
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• 2012

New candidates composed of anthracene and 4-alkylethynylbenzene end-capped oligomers for OTFTs were synthesized under Sonogashira coupling reaction conditions. All oligomers were characterized by FT-IR, mass, UV-visible, and PL emission spectrum analyses, cyclic voltammetry (CV), differential scanning calorimetry (DSC), thermal gravimetric analysis (TGA), $^1H$-NMR, and $^{13}C$-NMR. Investigation of their physical properties showed that the oligomers had high oxidation potential and thermal stability. Thin films of DHPEAnt and DDPEAnt were characterized by spin coating them onto Si/$SiO_2$ to fabricate top-contact OTFTs. The devices prepared using DHPEAnt and DDPEAnt showed hole field-effect mobilities of $4.0{\times}10^{-3}cm^2$/Vs and $2.0{\times}10^{-3}cm^2$/Vs, respectively, for solution-processed OTFTs.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.125-133
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• 2010

A versatile micro-robotic platform for micro/nano scale assembly has been demanded in a variety of application areas such as micro-biology and nanotechnology. In the near future, a flexible and compact platform could be effectively used in a scanning electron microscope chamber. We are developing a platform that consists of miniature mobile robots and a compact positioning stage with multi degree-of-freedom. This paper presents the design and the implementation of a low-cost and compact multi degree of freedom position sensor that is capable of measuring absolute translational and rotational displacement. The proposed sensor is implemented by using a CMOS type image sensor and a target with specific hole patterns. Experimental design based on statistics was applied to finding optimal design of the target. Efficient algorithms for image processing and absolute position decoding are discussed. Simple calibration to eliminate the influence of inaccuracy of the fabricated target on the measuring performance also presented. The developed sensor was characterized by using a laser interferometer. It can be concluded that the sensor system has submicron resolution and accuracy of ${\pm}4{\mu}m$ over full travel range. The proposed vision-based sensor is cost-effective and used as a compact feedback device for implementation of a micro robotic platform.

• Membrane Journal
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• v.18 no.1
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• pp.35-43
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• 2008

In this study, we tried to solve membrane fouling with membranes made by fine nano-particle in MBR process. And we confirmed good fouling resistance in pilot test. In this test, we confirmed our membrane with titania out-standing quality by testing in the pilot long-term test by comparing to other company product. Our membrane keep up steadily $20{\sim}25 L/m^2{\cdot}hr$ high flux in $7,000{\sim}13,000mg/L$ MLSS high sludge concentration. In addition to this quality, we studied membrane flux character related membrane arrangement, membrane-air line arrangement, air-line hole size, cleaning solution concentration, treatment method, etc. Using the optimization of this additional parameter, we tried to search method of maximizing membrane quality.

• Membrane Journal
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• v.29 no.6
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• pp.299-307
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• 2019

Photocatalysis is an environment friendly technique for degrading organic dyes in water. Tungsten oxide is becoming an active area of research in photocatalysis nanomaterials for having a smaller bandgap than the previously favored titanium dioxide. Synthesis of hierarchical structures, doping platinum (Pt), coupling with nanocomposites or other semiconductors are investigated as valid methods of improving the photocatalytic degradation efficiency. These impact the reaction by creating a redshift in the wavelength of light used, effecting charge transfer, and the formation/recombination of electron-hole pairs. Each of the methods mentioned above are investigated in terms of synthesis and photocatalytic efficiency, with the simplest being modification on the morphology of tungsten oxide, since it does not need synthesis of other materials, and the most efficient in photocatalytic degradation being complex coupling of metal oxides and carbon composites. The photocatalysis technology can be incorporated with water purification membrane by modularization process and applied to advanced water treatment system.