• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.585-593
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• 2008

In this work, we report several experimental data capable of evaluating the phase transformation characteristics of GeSbTe pseudobinary thin films comprehensively utilized as phase change materials. The phase transformation of the GeSbTe thin films was confirmed by XRD measurement from amorphous to hexagonal structure via fee structure except for $Ge_8Sb_2Te_{11}$. In addition, X-ray photoelectron spectra analysis revealed to weaken Ge-Te bond for $Ge_2Sb_2Te_5$ and to strengthen the bonds of all elements for $Ge_8Sb_2Te_{11}$ during the amorphous to crystalline transition. The values of optical energy gap $(E_{OP})$ were around 0.71 and 0.50 eV and the slopes of absorption in extended region (B) were ${\sim}5.1{\times}10^5$ and ${\sim}10{\times}10^5cm^{-1}{\cdot}V^{-1}$ for the amorphous and fcc-crystalline structures, respectively. Finally, the kinetics of amorphous-to-crystalline phase change on the GeSbTe films was characterized using a nano-pulse scanner with 658-nm laser diode (power; $1{\sim}17$ mW, pulse duration; $10{\sim}460$ ns).

• 한국재료학회지
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• 제12권10호
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• pp.784-790
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• 2002

For mass product of nanocrystalline ZnO ultrafine powders, self-sustaining combustion process(SCP) and ultrasonic spray combustion method(USCM) were applied at the same time. Ultrasonic spray gun was attached on top of the vertical type furnace. The droplet was sprayed into reaction zone of the furnace to form SCP which produces spherical shape with soft agglomerate crystalline ZnO particles. To characterize formed particles, fuel and oxidizing agent for SCP were used glycine and zinc nitrate or zinc hydroxide. Respectively, with changing combustion temperature and mixture ratio of oxidizing agent and fuel, the best ultrasonic spray conditions were obtained. To observe ultrasonic spray effect, two types of powder synthesis processes were compared. One was directly sprayed into furnace from the precursor solution (Type A), the other directly was heated on the hot plate without using spray gun (Type B). Powder obtained by type A was porous sponge shape with heavy agglomeration, but powder obtained using type B was finer primary particle size, spherical shape with weak agglomeration and bigger value of specific surface area. 9/ This can be due to much lower reaction temperature of type B at ignition time than type A. Synthesized nanocrystalline ZnO powders at the best ultrasonic spray conditions have primary particle size in range 20~30nm and specific surface area is about 20m$^2$/g.

• 열처리공학회지
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• 제21권1호
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• pp.10-19
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• 2008

To investigate the effect of ultrasonic nano-crystalline surface modification (UNSM) treatment on rolling contact fatigue and residual stress properties of bearing steels, this paper carried out a rolling contact fatigue test, measured residual stress and retained austenite, performed a wear test, observed microstructure, measured micro hardness, and analyzed surface topology. After the UNSM treatment, it was found that the surface became minute by over $100{\mu}m$. The micro surface hardness was changed from Hv730~740 of base material to Hv850~880 with about 20% improvement, and hardening depth was about 1.3 mm. The compressive residual stress was measured as high as -700~-900 MPa, and the quantity of retained austenite was reduced to 27% from 34%. The polymet RCF-6 ball type rolling contact fatigue test showed over 4 times longer fatigue lifetime after the UNSM treatment under 551 kgf load and 8,000 rpm. In addition, this paper observed the samples, which went through the rolling contact fatigue test, with OM and SEM, and it was found that the samples had a spalling phenomenon (the race way is decentralized) after the UNSM treatment. However, before the treatment, the samples had excessive spalling and complete exploration. Comparison of the test samples before and after the UNSM treatment showed a big difference in the fatigue lifetime, which seems to result from the complicated effects of micro particles, compressive residual stress, retained austenite, and surface topology.

• 마이크로전자및패키징학회지
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• 제16권3호
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• pp.61-65
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• 2009

단결정 실리콘 웨이퍼 위에 그라인딩 공정을 사용하여 인위적으로 결정학적 결함을 만들고 선택적 습식 식각 공정을 통하여 반사율을 저감시켜 태양전지에 적용할 수 있는 새로운 표면 조직을 형성하였다. 식각 용액의 농도와 식각 시간에 따른 표면 형태의 변화를 분석하고 그에 따른 표면의 광학적 반사율의 변화를 측정하였다. 결정학적 결함 분석과 표면 형태의 관찰은 각각 투과전자 현미경과 주사전자현미경을 이용하였고 광학적 특성은 spectrophotometer를 이용하여 분석하였다. 상기 방법에 의한 최적화된 실리콘 표면의 반사율은 평균 1%이하의 우수한 결과를 보였으며 짧은 공정시간 및 가격효율성 면에서 효과적인 제조 방법이라고 사료된다.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• Current Applied Physics
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• 제18권12호
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• pp.1540-1545
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• 2018

SiGe alloy is widely used thermoelectric materials for high temperature thermoelectric generator applications. However, its high thermoelectric performance has been thus far realized only in alloys synthesized employing mechanical alloying techniques, which are time-consuming and employ several materials processing steps. In the current study, for the first time, we report an enhanced thermoelectric figure-of-merit (ZT) ~ 1.1 at $900^{\circ}C$ in ntype $Si_{80}Ge_{20}$ nano-alloys, synthesized using a facile and up-scalable methodology consisting of rapid solidification at high optimized cooling rate ${\sim}3.4{\times}10^7K/s$, employing melt spinning followed by spark plasma sintering of the resulting nano-crystalline melt-spun ribbons. This enhancement in ZT > 20% over its bulk counterpart, owes its origin to the nano-crystalline microstructure formed at high cooling rates, which results in crystallite size ~7 nm leading to high density of grain boundaries, which scatter heat-carrying phonons. This abundant scattering resulted in a very low thermal conductivity ${\sim}2.1Wm^{-1}K^{-1}$, which corresponds to ~50% reduction over its bulk counterpart and is amongst the lowest reported thus far in n-type SiGe alloys. The synthesized samples were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy, based on which the enhancement in their thermoelectric performance has been discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.72-72
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• 2011

Recently, Zinc oxide (ZnO) nano-structures have been received attractive attention because of their outstanding optical and electrical properties. It might be a promising material considered for applications to photonic and electronic devices such as ultraviolet light emitting diode, thin film transistor, and gas sensors. ZnO nano-structures can be typically synthesized by the VLS growth mode and self-assembly. In the VLS growth mode using various growth techniques, the noble metal catalysts such as Au and Sn were used. However, the growth of ZnO nano-structures on nano-crystalline Au seeds using radio frequency (RF) magnetron sputtering might be explained by the profile coating, i.e. the ZnO nano-structures were a morphological replica of Au seeds. Ga doped ZnO (ZnO:Ga) nano-structures using this concept were synthesized and characterized by XRD, AFM, SEM, and TEM. We found that surface morphology is drastically changed from initial islands to later sun-flower typed nano-structures. We will present the structural evolution of ZnO:Ga nano-structures with increasing the film thickness.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.148-151
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• 2013

The control of Ga doping in ZnO nanowires (NWs) by physical vapor deposition has been implemented and characterized. Various Ga-doped ZnO NWs were grown using the vapor-liquid-solid (VLS) method, with Au catalyst on c-plane sapphire substrate by hot-walled pulsed laser deposition (HW-PLD), one of the physical vapor deposition methods. The structural, optical and electrical properties of Ga-doped ZnO NWs have been systematically analyzed, by changing Ga concentration in ZnO NWs. We observed stacking faults and different crystalline directions caused by increasing Ga concentration in ZnO NWs, using SEM and HR-TEM. A $D^0X$ peak in the PL spectra of Ga doped ZnO NWs that is sharper than that of pure ZnO NWs has been clearly observed, which indicated the substitution of Ga for Zn. The electrical properties of controlled Ga-doped ZnO NWs have been measured, and show that the conductance of ZnO NWs increased up to 3 wt% Ga doping. However, the conductance of 5 wt% Ga doped ZnO NWs decreased, because the mean free path was decreased, according to the increase of carrier concentration. This control of the structural, optical and electrical properties of ZnO NWs by doping, could provide the possibility of the fabrication of various nanowire based electronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and customized nano-sensors.

• Journal of Magnetics
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• 제17권2호
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• pp.78-82
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• 2012

CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

• 한국세라믹학회지
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• 제46권5호
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• pp.505-509
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• 2009

In this study, bulk nano-crystalline $Si_3N_4$ ceramics were fabricated by spark plasma sintering (SPS) and their mechanical properties, in particular wear, were investigated. A wide range of grain sizes, from 80 nm and 250 nm were obtained by varying sintering conditions ($1550^{\circ}C$-5 min to $1650^{\circ}C$-20 min). The elastic modulus of obtained ceramics was ${\sim}250$ GPa and hardness was in the range of $13{\sim}14$ GPa. The indentation fracture toughness increased from $2.58MPa{\cdot}m^{1/2}$ to $3.24MPa{\cdot}m^{1/2}$ with increasing sintering temperature possibly due to the elongated grains. Sliding wear tests revealed at least an order magnitude improvement in wear resistance with grain refinement. Microstructure analysis indicated that nano-$Si_3N_4$ specimens worn mainly through delamination and microcracking, while that of coarser specimens revealed severe wear with grain debonding and fracture.