• Title/Summary/Keyword: nano $SiO_2$

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Effects of Precursor on the Electrical Properties of Spin-on Dielectric Films (Spin-on Dielectric 막의 전기적 특성에 미치는 전구체의 영향)

  • Lee, Wan-Gyu
    • Korean Journal of Materials Research
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    • v.21 no.4
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    • pp.236-241
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    • 2011
  • Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

The Visualization of Temperature Field for Nanoporous Thin Film using Laser-Induced Fluorescence. (형광 나노포러스 박막의 온도장 가시화)

  • Oh, Young-Su;Baek, In-Gi;Jeon, Pil-Soo;Kim, Hyun-Jung;Yoo, Jai-Suk
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2459-2464
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    • 2007
  • In present study, a temperature field of specimens which was coated with fluorescence dye such as Rhodamine-B(Rh-B) has been measured, based on the fluorescence intensity. Silica(SiO2) nano porous structure with 1um thickness was constructed on a cover glass, and fluorescence dye was digested into these porous thin films. To optimize manufacturing coating process, various solvents, Rh-B concentration, and other chemical materials were applied to fabricate the specimen and all specimens were measured on the various temperature conditions. For the measurement, a 14 bit cooled CCD camera with 1600 by 1200 spatial resolution is equipped with epifluorescence microscope to obtain only fluorescence intensity from 1.2 mm by 0.9 mm field of view of the illuminated coated specimen.

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Recent Trends in the Development of Organic Thin Film Transistor Including SAM Dielectric (SAM 절연체를 이용한 유기박막트랜지스터 개발의 최근 동향)

  • Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.2 no.1
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    • pp.13-17
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    • 2009
  • A newly developed OTFT manufacturing process using the combination of self-assembly techniques and vapor phase polymerization method revealed that a thick $SiO_2$ dielectric layer (100~200 nm) is not well compatible with conducting polymer electrode, thereby resulting in still recognizable contact resistance, unstable $V_{th}$ and leaking off current. A couple of very recent studies showed that this issue may be solved by replacing such inorganic dielectric with a self-assembled monolayer or multilayer (organic) dielectric. Therefore, this short review introduces recent trends in the development of high performance thin film transistor consisting of both organic semiconductor and SAM dielectric.

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Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System

  • Lee, Woojin;Fukazawa, Atsuki;Choa, Yong-Ho
    • Korean Journal of Materials Research
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    • v.26 no.9
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    • pp.455-459
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    • 2016
  • The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

Conducting Properties of Polypyrrole Coated Imogolite

  • Lee, Yun-Ha;Kim, Bum-Joong;Yi, Whi-kun;Takahara, Atsushi;Sohn, Dae-Won
    • Bulletin of the Korean Chemical Society
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    • v.27 no.11
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    • pp.1815-1818
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    • 2006
  • Imogolite which has chemical composition, $(HO)_3Al_2O_3SiOH$, was synthesized with orthosilicate acid and aluminium chloride at low pH solution. It has extremely large aspect ratio with an external diameter of 2nm and the length of a few micrometers. The high aspect ratio of the imogolite could make the material as the filler for the high strength fiber and as the wire for the electronic applications. Here, Imogolite that derives considerable microporosity from a nanometer-sized tubular structure has been modified with a conducting polymer, polypyrrole. Its bonding and wiring structure were confirmed by IR and TEM. The measured conductivity after modification with polypyrrole increased with polypyrrole thickness at various voltage conditions.

Structural damaging in few -layer graphene due to the low energy electron irradiation

  • Guseinov, Nazim R.;Baigarinova, Gulzhan A.;Ilyin, Arkady M.
    • Advances in nano research
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    • v.4 no.1
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    • pp.45-50
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    • 2016
  • Data of Raman spectroscopy from graphene and few-layer graphene (FLG) irradiated by SEM electron beam in the range of energies 0.2 -30 keV are presented. The obvious effect of damaging the nanostructures by all used beam energies for specimens placed on insulator substrates ($SiO_2$) was revealed. At the same time, no signs of structural defects were observed in the cases when FLG have been arranged on metallic substrate. A new physical mechanism of under threshold energy defect production supposing possible formation of intensive electrical charged puddles on insulator substrate surface is suggested.

Sol-Gel 법으로 증착된 ZnO 박막의 냉각속도에 따른 특성 변화 및 후열처리 효과

  • Kim, Min-Su;Im, Gwang-Guk;Kim, So-ARam;Nam, Gi-Ung;Park, Sang-Hyeon;U, Seok-Beom;Lee, Dong-Yul;Kim, Jin-Su;Kim, Jong-Su;Lee, Ju-In;Im, Jae-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.81-81
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    • 2011
  • Sol-gel spin-coating법을 이용하여 ZnO 박막을 증착하였다. Sol 전구체 용액을 Si(100) 기판에 증착하고 전열처리(pre-heat treatment)하여 gel 상태의 ZnO 박막을 형성시킨 후 다른 속도로 냉각시켰다. Atomic force microscopy (AFM), X-ray diffraction (XRD), Raman, photoluminescence (PL)을 이용하여 냉각속도가 ZnO 박막의 구조적 및 광학적 특성에 미치는 영향을 분석하였다. 느린 속도($5^{\circ}C$/min)로 냉각시킨 ZnO 박막은 나노섬유질구조(nano-fibrous structure)를 나타내었고, 상온에서 바로 냉각시킨 ZnO 박막은 매우 매끄러운 표면(mirror-like surface)을 나타내었다. ZnO (100), ZnO (002), ZnO (101) 방향을 나타내는 회절피크가 관찰되었고, 냉각속도에 따른 ZnO 박막의 배향성을 알아보기 위하여 texture coefficient (TC)를 계산해 보았다. 상온에서 바로 냉각시킨 ZnO 박막(TC(002)=76.3%)이 느린 속도로 냉각시킨 박막(TC(002)=45.2%)보다 (002) 방향으로의 배향성이 우세하게 나타났으며, 잔류응력도 작았다. 뿐만 아니라 PL을 이용한 광학적 특성평가에서도 상온에서 바로 냉각시킨 ZnO 박막에서 더 강한 강도와 좁은 반치폭(full-width at halt-maximum)을 갖는 near-band-edge emission (NBE) 피크가 관찰되었다. 후열처리에 따른 구조적 및 광학적 특성 변화 또한 연구하였다.

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Patterning and Characterization of Co/Ni Composite Silicide using EIB (FIB를 이용한 CoNi 복합실리사이드 나노배선의 패턴가공과 형상 분석)

  • Song Oh-Sung;Kim Sang-Yeob;Jung Yoon-Ki
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.3
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    • pp.332-337
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    • 2006
  • We prepared 100 nm-thick CoNi composite silicide on a 70 nm-thick polysilicon substrate. Composite silicide laye.s were formed by rapid thermal annealing(RTA) at the temperatures of $700^{\circ}C,\;900^{\circ}C,\;1000^{\circ}C$ for 40 seconds. A Focused ion beam (FIB) was used to make nano-patterns with the operation range of 30 kV and $1{\sim}100$ pA. We investigated the change of thickness, line width, and the slope angle of the silicide patterns by FIB. More easily made with the FIB process than with the conventional polycide process. We successfully fabricated sub-100nm etched patterns with FIB condition of 30kv-30pA. Our result implies that we may integrate nano patterns with our newly proposed CoNi composite silicides.

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An Artificial Neural Networks Model for Predicting Permeability Properties of Nano Silica-Rice Husk Ash Ternary Blended Concrete

  • Najigivi, Alireza;Khaloo, Alireza;zad, Azam Iraji;Rashid, Suraya Abdul
    • International Journal of Concrete Structures and Materials
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    • v.7 no.3
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    • pp.225-238
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    • 2013
  • In this study, a two-layer feed-forward neural network was constructed and applied to determine a mapping associating mix design and testing factors of cement-nano silica (NS)-rice husk ash ternary blended concrete samples with their performance in conductance to the water absorption properties. To generate data for the neural network model (NNM), a total of 174 field cores from 58 different mixes at three ages were tested in the laboratory for each of percentage, velocity and coefficient of water absorption and mix volumetric properties. The significant factors (six items) that affect the permeability properties of ternary blended concrete were identified by experimental studies which were: (1) percentage of cement; (2) content of rice husk ash; (3) percentage of 15 nm of $SiO_2$ particles; (4) content of NS particles with average size of 80 nm; (5) effect of curing medium and (6) curing time. The mentioned significant factors were then used to define the domain of a neural network which was trained based on the Levenberg-Marquardt back propagation algorithm using Matlab software. Excellent agreement was observed between simulation and laboratory data. It is believed that the novel developed NNM with three outputs will be a useful tool in the study of the permeability properties of ternary blended concrete and its maintenance.

Optical Probing of Electronic Interaction between Graphene and Hexagonal Boron Nitride (hBN)

  • Ahn, Gwanghyun;Kim, Hye Ri;Ko, Taeg Yeoung;Choi, Kyoungjun;Watanabe, Kenji;Taniguchi, Takashi;Hong, Byung Hee;Ryu, Sunmin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.213-213
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    • 2013
  • Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

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