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Structural damaging in few -layer graphene due to the low energy electron irradiation

  • Guseinov, Nazim R. (Open access National Nanolab, Kazakh National University) ;
  • Baigarinova, Gulzhan A. (Open access National Nanolab, Kazakh National University) ;
  • Ilyin, Arkady M. (Open access National Nanolab, Kazakh National University)
  • Received : 2015.11.30
  • Accepted : 2016.03.09
  • Published : 2016.03.25

Abstract

Data of Raman spectroscopy from graphene and few-layer graphene (FLG) irradiated by SEM electron beam in the range of energies 0.2 -30 keV are presented. The obvious effect of damaging the nanostructures by all used beam energies for specimens placed on insulator substrates ($SiO_2$) was revealed. At the same time, no signs of structural defects were observed in the cases when FLG have been arranged on metallic substrate. A new physical mechanism of under threshold energy defect production supposing possible formation of intensive electrical charged puddles on insulator substrate surface is suggested.

Keywords

References

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