• Title/Summary/Keyword: nano $SiO_2$

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Improvement of Electrical and Thermal Characteristics of Nano-Micro Epoxy Composite

  • Cho, Sung-Hoon;Kim, Yu-Min;Kwon, Jung-Hun;Lim, Kee-Joe;Jung, Eui-Hwan;Lee, Hung-Kyu;Shin, Pan-Seok
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.4
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    • pp.160-163
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    • 2011
  • Polymer nanocomposite has been attracting more attention as a new insulation material because homogeneous dispersion of nano-sized inorganic fillers can improve various properties significantly. In this paper, various kinds of epoxy-based nanocomposites were made, and the AC breakdown strengths of Nano filler and micro-$SiO_2$ filler mixtures of epoxy-based composites were analyzed using sphere-to-sphere electrodes. Moreover, nano- and microfiller combinations were investigated as an approach to practical application of nanocomposite insulation materials. Its composition ratio was 100 (resin):82 (hardener):1.5 (accelerator). AC breakdown tests were performed at room temperature ($25^{\circ}C$), $80^{\circ}C$, and $100^{\circ}C$ in the vicinity of $T_g$ ($90^{\circ}C$). Thermal conductivity was measured using TC-30.

Dependency of the Device Characteristics on Plasma Nitrided Oxide for Nano-scale PMOSFET (Nano-scale PMOSFET에서 Plasma Nitrided Oixde에 대한 소자 특성의 의존성)

  • Han, In-Shik;Ji, Hee-Hwan;Goo, Tae-Gyu;You, Ook-Sang;Choi, Won-Ho;Park, Sung-Hyung;Lee, Heui-Seung;Kang, Young-Seok;Kim, Dae-Byung;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.7
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    • pp.569-574
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    • 2007
  • In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.

Preparation and Atomic Force Microscopy (AFM) Characterization of DNA Scaffolds as a Template for Protein Immobilization

  • Kim, Hyeran;Lee, Hyun Uk;Lee, Jouhahn
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.411.2-411.2
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    • 2014
  • The design of DNA nanostructures is of fundamental importance, the intrinsic value of DNA as a building-block material lies in its ability to organize other bio-molecules with nanometer-scale spacing. Here, we report the fabrication of DNA scaffolds with nano-pores (<10 nm size) that formed easily without the use of additives (i.e., avidin, biotin, polyamine, or inorganic materials) into large-scale structures by assembling DNA molecules at near room temperature ($30^{\circ}C$) and low pH (~5.5). Protein immobilization results also confirmed that a fibronectin (FN) proteins/large scale DNA scaffolds/aminopropylytriethoxysilane (APS)/SiO2/Si substrate with high sensitivity formed in a well-defined manner. The DNA scaffolds can be applied for use with DNA-based biochips, biophysics, and cell biology.

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Fabrication of Nanostructures by Dry Etching Using Dewetted Pt Islands as Etch-masks (Dewetting된 Pt Islands를 Etch Mask로 사용한 GaN 나노구조 제작)

  • Kim, Taek-Seung;Lee, Ji-Myon
    • Korean Journal of Materials Research
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    • v.16 no.3
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    • pp.151-156
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    • 2006
  • A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

Etch characteristics of TiN thin film adding $Cl_2$ in $BCl_3$/Ar Plasma ($BCl_3$/Ar 플라즈마에서 $Cl_2$ 첨가에 따른 TiN 박막의 식각 특성)

  • Um, Doo-Seung;Kang, Chan-Min;Yang, Xue;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.168-168
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    • 2008
  • Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

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Assessment Corrosion and Bioactive Behavior of Bioglass Coating on Co-Cr-Mo Alloy By Electrophoretic Deposition For Biomedical Applications

  • Areege K. Abed;Ali. M. Mustafa;Ali M. Resen
    • Corrosion Science and Technology
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    • v.23 no.3
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    • pp.179-194
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    • 2024
  • A layer-by-layer coating was produced using electrophoretic deposition for a HA/Al2O3 coating layer and a bioglass coating layer on Co-Cr-Mo alloy with a roughness of 0.5 ㎛ (400 emery paper SiC). The corrosion behaviour was analyzed by assessing the coating layers' exceptional corrosion resistance, which outperformed the substrate. Cr ion release test using AAS was carried out, indicating that factional graded coating inhibited ion release from the uncoated substrate to coated sample. The porosity was expressed as a percentage, representing the extent of imperfections on the surface of all coatings. These imperfections fell within an acceptable range of 1% to 3%. The roughness of the coated surface was measured using atomic force microscopy, which revealed an excellent roughness value of 3.32 nm. Tape test technique for adhesion revealed that the removal area of the substrate coating layer varied by 11.92%. X-ray diffraction analysis confirmed the presence of all coating material peaks and verified phases of the deposited coating layers. These findings provided evidence that the coating composition remains unaffected by the electrophoretic deposition process. The bioactivity was assessed by immersion in a simulated bodily fluid, which revealed the formation of HCA during a period of 5 days.

Earthquake response of nanocomposite concrete pipes conveying and immersing in fluid using numerical methods

  • Maleki, Mostafa;Bidgoli, Mahmood Rabani;Kolahchi, Reza
    • Computers and Concrete
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    • v.24 no.2
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    • pp.125-135
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    • 2019
  • Concrete pipelines are the most efficient and safe means for gas and oil transportation over a long distance. The use of nano materials and nono-engineering can be considered for enhancing concrete pipelines properties. the tests show that SiO2 nanoparticles can improve the mechanical behavior of concrete. Moreover, severe hazard for pipelines is seismic ground motion. Over the years, scientists have attempted to understand pipe behavior against earthquake most frequently via numerical modeling and simulation. Therefore, in this paper, the dynamic response of underwater nanocomposite submerged pipeline conveying fluid is studied. The structure is subjected to the dynamic loads caused by earthquake and the governing equations of the system are derived using mathematical model via Classic shell theory and Hamilton's principle. Navier-Stokes equation is employed to calculate the force due to the fluid in the pipe. As well, the effect of external fluid is modeled with an external force. Mori-Tanaka approach is used to estimate the equivalent material properties of the nanocomposite. 1978 Tabas earthquake in Iran is considered for modelling seismic load. The dynamic displacement of the structure is extracted using differential quadrature method (DQM) and Newmark method. The effects of different parameters such as SiO2 nanoparticles volume percent, boundary conditions, thickness to radius ratios, length to radius ratios, internal and external fluid pressure and earthquake intensity are discussed on the seismic response of the structure. From results obtained in this paper, it can be found that the dynamic response of the pipe is increased in the presence of internal and external fluid. Furthermore, the use of SiO2 nanoparticles in concrete pipeline reduces the displacement of the structure during an earthquake.

Improvement of Electrochemical Performance of LiFePO4 by Carbon Coating and Morphology Control into Porous Structure (LiFePO4/C의 carbon coating 방법 및 다공성 구조 형성에 의한 전기화학적 특성 개선)

  • Kong, Ki Chun;Ju, Jeh Beck
    • Journal of the Korean Electrochemical Society
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    • v.17 no.4
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    • pp.229-236
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    • 2014
  • In this study, the method to improve the electrochemical performance of $LiFePO_4$ by carbon coating and morphology control into porous structure was studied. The synthesis of $LiFePO_4$ was done by coprecipitation method by two step procedure. In the first step $FePO_4$ precursor was synthesized by coprecipitation method, followed by impregnation of lithium into the precursor at $750^{\circ}C$. The carbon coating was done by both physical and chemical coating processes. Using the physical coating process, the amount of coating layer was 6% and the capacity achieved was 125 mAh/g. In case of chemical coating process, the active material delivered 130~140 mAh/g, which is about 40% improvement of delivered capacity compared to uncoated $LiFePO_4$. For the morphology control into porous structure, we added nano particles of $Al_2O_3$ or $SiO_2$ into the active materials and formed the nanocomposite of ($Al_2O_3$ or $SiO_2$)/$LiFePO_4$. Between them, $SiO_2/LiFePO_4$ porous nanocomposite showed larger capacity of 132 mAh/g.

Oxygen Permeation Characteristics of Nano-silica Hybrid Thin Films (나노 실리카 하이브리드 박막의 산소 투과 특성)

  • Kim, Seong-Woo
    • Journal of the Korean Applied Science and Technology
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    • v.24 no.2
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    • pp.174-181
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    • 2007
  • In this study, $SiO_2/poly(ethylene-co-vinyl$ alcohol)(EVOH) hybrid coating materials with gas barrier property could be produced using sol-gel method. The biaxially oriented polypropylene (BOPP) substrate with surface pretreatment was coated with the prepared hybrid sols containing various inorganic silicate component by a spin coating method. Crystallization behavior of the hybrids was investigated in terms of analysis of X-ray diffraction and cooling thermogram from DSC experiment. From the morphological observation of the $SiO_2/EVOH$ hybrid gel, it was confirmed that there existed an optimum content of inorganic silicate precursor, Tetraethylorthosilicate (TEOS), to produce hybrid materials with dense microstructure, exhibiting uniformly dispersed silica particles with average size below 100 nm. When TEOS was added at below or above the optimum content, particle clusters with large domain were observed, resulting in phase separation. This morphological result was found to be in good agreement with that of oxygen permeability of the hybrid coated films. In the case of film coated with hybrid prepared from addition of 0.01 - 0.02mol of TEOS, a remarkable improvement in barrier property could be obtained, however, with the addition of TEOS more than 0.04 mol, the barrier property was dramatically reduced because of phase separation and micro-crack formation on the film surface.

Development of Highly Conductive Poly(3,4-ethylenedioxythiophene) Thin Film using High Quality 3-Aminopropyltriethoxysilane Self-Assembled Monolayer (고품질 3-Aminopropyltriethoxysilane 자기조립단분자막을 이용한 고전도도 Poly(3,4-ethylenedioxythiophene) 전극박막의 개발)

  • Choi, Sangil;Kim, Wondae;Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.4 no.4
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    • pp.294-297
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    • 2011
  • Quality of PEDOT electrode thin film vapor phase-polymerized on 3-aminopropyltriethoxysilane (APS) self-assembled monolayer (SAM) is very crucial for making an ohmic contact between electrode and semiconductor layer of an organic transistor. In order to improve the quality of PEDOT film, the quality of APS-SAM laying underneath the film must be in the best condition. In this study, in order to improve the quality of APS-SAM, the monolayer was self-assembled on $SiO_2$ surface by a dip-coating method under strictly controlled relative humidity (< 18%RH). The quality of APS-SAM and PEDOT thin film were investigated with a contact angle analyzer, AFM, FE-SEM, and four-point probe. The investigation showed that a PEDOT film grown on the humidity-controlled SAM is very smooth and compact (sheet resistivity = 20.2 Ohm/sq) while a film grown under the uncontrolled condition is nearly amorphous and contains quite many pores (sheet resistivity = 200 Ohm/sq). Therefore, this study clearly proves that a highly improved quality of APSSAM can offer a highly conductive PEDOT electrode thin film on it.