• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.2
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• pp.195-200
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/70 w-Poly-Si/200 $nm-SiO_2/Si$ and $10nm-Ni_{0.5}Co_{0.5}/70$ nm-Poly-Si/200 $nm-SiO_2/Si$ structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required fur annealing. Silicides underwent rapid anneal at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of the polycrystalline silicon substrate mimicking the gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profile scope were employed for the determination of cross sectional microstructure and thickness. 20nm thick nickel cobalt composite silicides on polycrystalline silicon showed low resistance up to $900^{\circ}C$, while the conventional nickle silicide showed low resistance below $900^{\circ}C$. Through TEM analysis, we confirmed that the 70nm-thick nickel cobalt composite silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. We identified $Ni_3Si_2,\;CoSi_2$ phase at $700^{\circ}C$ using an X-ray diffractometer. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo composite silicide from NiCo alloy films process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.205-210
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• 2005

Nanoscale silica powder was synthesized from $SiO_2$ precursor solution using Tetraethyl Orthosilicate (TEOS) by polyacrylamide gel method. This process was of simplicity and provided ultrafine powders at relatively low calcination temperatures because polymer network could inhibit aggregation of $SiO_2$ powder. The particle size of Si02 powder was affected by the concentration of ammonium persulphate and N, N'-methylene-bis-acrylamide(BIS) in the gel precursor. The particle size decreased with increasing ammonium persulphate and was mininum size of 10 nm at 0.01 M. Also, the size decreased with increasing BIS concentration and was 5 nm at its concentration of 0.05 M.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.42-46
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• 2005

It has been known that the synthesis of the cathode materials for the lithium rechargeable batteries by the sol-gel process has many advantages over the conventional solid-state method. It has been, however, a continuing issue that new additional steps should be introduced to commercialize this process. In this work, spray drying was introduced to the existing sol-gel process as a continuous mass production method of the pre-heat treatment precursor materials. The precursors of $LiCoO_2$ and $LiNi_{0.8}Co_{0.2}O_2$ were continuously produced through spray drying from the solution containing stoichiometric amount of lithium, cobalt, and nickel sources as well as a chelating agent. The process variables, such as pH of the starting solution, spray drying conditions, and calcination conditions were optimized. The XRD pattern for the synthesized material indicated a good crystallinity with a layered structure.

• Advances in nano research
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• v.12 no.3
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• pp.291-300
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• 2022

The behavior of hydrogen species on the surface of the catalyst during the Lewis acid transformation to form Brønsted acid sites over the spherical silica-supported WO_x catalyst was investigated. To understand the structure-activity relationship of Lewis acid transformation and hydrogen bonding interactions, we explore the potential of using the in situ diffuse reflection infrared Fourier transform spectroscopy (DRIFTS) with adsorbed ammonia and hydrogen exposure. From the results of in situ DRIFTS measurements, Lewis acid sites on surface catalysts were transformed into new Brønsted acid sites upon hydrogen exposure. The adsorbed NH₃ on Lewis acid sites migrated to Brønsted acid sites forming NH⁴⁺. The results show that the dissociated H atoms present on the catalyst surface formed new Si-OH hydroxyl species - the new Brønsted acid site. Besides, the isolated Si-O-W species is the key towards H-bond and Si-OH formation. Additionally, the H atoms adsorbed surrounding the Si-O-W species of mono-oxo O=WO₄ and di-oxo (O=)₂WO₂ species, where the Si-O-W species are the main species presented on the Inc-SSP catalysts than that of the IWI-SSP catalysts.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.22-25
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• 2007

In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.5
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• pp.483-487
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• 2014

In this study, joining methods with SiC powder as the joining adhesives were studied in order to avoid the residual stresses coming from CTE (Coefficient of Thermal Expansion) mismatch between substrate and joining layer. The shear strength and microstructure of joined material between SiC substrates are investigated. The commercial Hexoloy-SA (Saint-Gobain Ceramics, USA) used in this work as substrate material. The fine ${\beta}$-SiC nano-powder which the average particle size is below 30 nm, $Al_2O_3$, $Y_2O_3$, and $SiO_2$ were used as joining adhesives. The specimens were joined with 20MPa and $1400-1900^{\circ}C$ by hot pressing in argon atmosphere. The shear test was performed to investigate the bonding strength. The cross-section of the joint was characterized by using an optical microscope and scanning electron microscopy (SEM).

• Nanomaterials
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• v.12 no.12
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• pp.1956-1965
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• 2022

The electrode concept of graphite and silicon blending has recently been utilized as the anode in the current lithium-ion batteries (LIBs) industry, accompanying trials of improvement of cycling life in the commercial levels of electrode conditions, such as the areal capacity of approximately 3.3 mAh/cm² and volumetric capacity of approximately 570 mAh/cm³. However, the blending concept has not been widely explored in the academic reports, which focused mainly on how much volume expansion of electrodes could be mitigated. Moreover, the limitations of the blending electrodes have not been studied in detail. Therefore, herein we investigate the graphite blending electrode with micron-sized SiO_x anode material which is one of the most broadly used Si anode materials in the industry, to approach the commercial and practical view. Compared to the silicon micron particle blending electrode, the SiO_x blending electrode showed superior cycling performance in the full cell test. To elucidate the cause of the relatively less degradation of the SiO_x blending electrode as the cycling progressed in full-cell, the electrode level expansion and the solid electrolyte interphase (SEI) thickening were analyzed with various techniques, such as SEM, TEM, XPS, and STEM-EDS. We believe that this work will reveal the electrochemical insight of practical SiO_x-graphite electrodes and offer the key factors to reducing the gap between industry and academic demands for the next anode materials.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.339-343
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• 2005

Pt-$SrBi_2Nb_2O_9(SBN)-Pt-Y_2O_3-Si$ gate field effect transistors (MFMISFETs) have been fabricated and the SBN thin films are rapid thermal annealed in oxygen plasma. The grain size of the SBN becomes 4 times much larger than that of furnace annealed SBN films even at the same annealing temperature of $700^{\circ}C$, remnant polarization value of Pt-SBN-Pt is improved by 2 times. Using the rapid grain growth of SBN for the MFM-ISFET, memory window and programming characteristics of on/off states are fairly well improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.192.1-192.1
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• 2015

We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.