• Title/Summary/Keyword: nano $SiO_2$

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Growth and characterization of LaxSryMnzO3 nanorod (LaxSryMnzO3 나노로드 성장 및 특성 분석)

  • Kim, Young Jung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.2
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    • pp.74-79
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    • 2016
  • The lanthanum oxide nano-rods were grown on the surface of 3 mol% Yttria Partially Stabilized Zirconia ceramic composite which containing Lanthanum-Strontium Manganate, $La_xSr_yMn_zO_3$ for the purpose of endorsing the antistatic property. The diameter and the aspect ratio of the nano-rods were greatly changed according to the growing condition. With the optical microscope observation, the nano-rods shining brightly. It was confirmed that the major components of nano-rods is La, and Sr, Mn, Si are minor components by SEM and TEM analyses.

Characteristic and Electrical Properties of $TiN_xO_y/TiN_x$ Multilayer Thin Film Resistors with a High Resistance ($TiN_xO_y/TiN_x$다층 박막을 이용한 고저항 박막 저항체의 특성평가)

  • Park, Kyoung-Woo;Hur, Sung-Gi;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.19-19
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    • 2009
  • TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

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Effect of Ambient Gas to Growth of SiO2 Nanowires by Vapor Evaporation Method (기상휘발법에 의한 이산화규소 나노와이어의 성장에 미치는 가스의 영향)

  • Rho Dae-Ho;Kim Jae-Soo;Byun Dong-Jin;Lee Jae-Hoon;Yang Jae-Woong;Kim Na-Ri
    • Korean Journal of Materials Research
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    • v.15 no.5
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    • pp.323-333
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    • 2005
  • Effects of gases to growth of $SiO_2$ nanowires were characterized. $N_2$, Ar, and $O_2$ gas's effect were determined. $SiO_2$ nanowires growth scheme was varied by kind and flow rates of gases because of amounts of $O_2$. Flow rates of gases and kind of substrates affected nanowires' diameters, lengths and morphologies of grown nano wires. With increasing flow rates of gases, nanowire's diameter increased because of additional VS and SLS reactions. By TEM characterization, We knows that, grown $SiO_2$ nanowires on Si substrate showed two shell structures. These shapes of nanowires were formed by reaction of additional SLS growth. Grown $SiO_2$ nanowires showed blue luminescence by PL characterization These Blue luminescence was due to quantum confinement effect and oxygen vacancies in the nanowires.

Patterned Growth of ZnO Semiconducting Nanowires and its Field Emission Properties (ZnO 반도체 나노선의 패턴 성장 및 전계방출 특성)

  • Lee, Yong-Koo;Park, Jae-Hwan;Choi, Young-Jin;Park, Jae-Gwan
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.623-626
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    • 2010
  • We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.

Wear Characteristics of SiC by Sintered Temperature and SiO2 Contents (소결온도 및 SiO2 첨가량에 따른 탄화규소의 마모 특성)

  • Park, Sung-Ho;Park, Won-Jo;Yoon, Han-Ki
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.32 no.11
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    • pp.1003-1009
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    • 2008
  • In this study, liquid phase sintered SiC (LPS-SiC) materials were made by hot pressing method. The particle size of nano-SiC powder was 30nm. Alumina ($Al_2O_3$), yttria ($Y_2O_3$) and silica ($SiO_2$) were used for sintering additives. To investigate effects of $SiO_2$, ratios of $SiO_2$ contents were changed by five kinds. Materials have been sintered for 1 hour at $1760^{\circ}C$, $1780^{\circ}C$ and $1800^{\circ}C$ under the pressure of 20MPa. The system of sintering additives which affects a property of sintering as well as the influence depending on compositions of sintering additives were investigated by measurement of density, mechanical properties such as flexural strength, vickers hardness and sliding wear resistance were investigated to make sure of the optimum condition which is about matrix of $SiC_f$/SiC composites. The abrasion test condition apply to load of 20N at 100RPM for 20min. Sintered density, flexural strength of fabricated LPS-SiC increased with increasing the sintering temperature. And in case of LPS-SiC with low $SiO_2$, sliding wear resistance has very excellent. Monolithic SiC $1800^{\circ}C$ sintering temperatures and 3wt% have excellent wear resistance.

The transient sputtering yield change of an amorphous Si layer by low energy $O_2^{+}$ and $Ar^{+}$ ion bombardment

  • Shin, Hye-Chung;Kang, Hee-Jae;Lee, Hyung-Ik;Moon, Dae-Won
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.92-94
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    • 2003
  • The sputtering yield change of an amorphous Si layer on Si(100) was measured quantitatively for 0.5 keV $O_2^{+}$ and $Ar^{+}$ ion bombardment with in suit MEIS. In the case of 0.5 keV $O_2^{+}$ ion bombardment, at the initial stage of sputtering before surface oxidation, the sputtering yield of Si was 1.4 (Si atoms/$O_2^{+}$) and then decreased down to 0.06 at the ion dose of $3\times10^{16}O_2\;^{+}\textrm{/cm}^2$. In the case of 0.5 keV $Ar^{+}$ ion bombardment, the sputtering yield of Si for the surface normal incidence was 0.56 at the ion dose of 2.5 ${\times}$ 10$^{15}$ $Ar^{+}\textrm{cm}^2$, and rapidly saturated to 1.2 at dose of $7.5\times10^{15}Ar^+\textrm{cm}^2$. For the incidence angle of 80 from surface normal, the sputtering yield of Si was saturated to about 1.4 at the initial stage of sputtering. The surface transient effects, caused by change in sputtering yield at the initial stage of sputtering can be negligible when 0.5 keV $Ar^{+}$ ion at extremely grazing angle was used for sputter depth profiling.g.

Barium Hexaferrite Thin Films Prepared by the Sol-Gel Method

  • An, Sung-Yong;Lee, Sang-Won;Shim, In-Bo;Yun, Sung-Roe;Kim, Chul-Sung
    • Journal of Magnetics
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    • v.6 no.1
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    • pp.23-26
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    • 2001
  • Nano-crystalline hexaferrite $BaFe_{12}O_{19}$(BaM) thin films have been prepared by the sol-gel method. A solution of Ba-nitrate and Fe-nitrates was dissolved in solvent with the stoichiometric ratio Ba/Fe=1/10. Films were spin-coated onto $SiO_2$Si substrates, dried and then heated in air at various temperatures. In films prepared at a drying temperature $T_d=250^{\circ}C$ and a crystallizing temperature 650${\circ}C$, single-phase BaM was obtained. High coercivities were obtained in these nano-crystalline thin films, 4~5.5 kOe for hexaferrite. Polycrystalline BaM/$SiO_2$/Si(100) thin films were characterized by Rutherford backscattering (RBS), thermogravimetry (TGA), differential thermal analysis (DTA), x-ray diffraction (XRD), and vibrating sample magnetometry (VSM), as well as Fourier transform infrared spectroscopy (FTIR). The perpendicular coercivity $H_{C\bot}$ and in-plane coercivity $H_{CII}$ after annealing at 650${\circ}C$ for 2 hours were 4766 Oe and 4480 Oe, respectively, at room temperature, under a maximum applied field of 10 kOe.

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Characteristics of NFGM Devices Constructed with a Single ZnO Nanowire and Al Nanoparticles (ZnO 나노선 트랜지스터를 기반으로 하는 Al 나노입자플로팅 게이트 메모리 소자의 특성)

  • Kim, Sung-Su;Cho, Kyoung-Ah;Kim, Sang-Sig
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.4
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    • pp.325-327
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    • 2011
  • In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.

Synthesis of Silicon Carbide Nano-Powder from a Silicon-Organic Precursor by RF Inductive Thermal Plasma (RF 유도 열플라즈마를 이용한 유기 용매로 부터의 탄화규소 나노 분말 합성)

  • Ko, Sang-Min;Koo, Sang-Man;Kim, Jin-Ho;Cho, Woo-Seok;Hwang, Kwang-Taek
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.523-527
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    • 2012
  • Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

Observation of nano powders and fly ash usage effects on the fluidity features of grouts

  • Celik, Fatih;Yildiz, Oguzhan;Bozkir, Samet M.
    • Advances in nano research
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    • v.13 no.1
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    • pp.13-28
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    • 2022
  • The pumpability of the grouts is significant issue in concept of the rheological and workability properties during penetrating to voids and cracks. To improve the fluidity features of the grout mixes, the usage of Colloidal Nano Particular Powders (CNPPs) with mineral additives such as fly ash (FA) can contribute. Therefore, the main purpose of this study can be explained as investigating the usage effects of four types of Colloidal Nano Particular Powders (n-TiO2, n-ZnO, n-Al2O3 and n-SiO2) as nano additives on the rheological, workability and bleeding properties of cement-based grout incorporated with fly as. Test results showed that the usage of FA in the grout samples positively contribute to increase on the fluidity of the grout samples as expected. The dilatant behavior was observed from the results for all mixes. Observing the effect of nano-sized additives in such cement-based grout mixtures with high fluidity has presented remarkable effects in this study.