• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.381-386
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• 2013

A new resistance model for a Schottky Barrier Diode (SBD) in CMOS technology is proposed in this paper. The proposed model includes the n-well thickness as a variable to explain the operational behavior of a planar SBD which is firstly introduced in this paper. The model is verified using the simulation methodology ATLAS. For verification of the analyzed model and the ATLAS simulation results, SBD prototypes are fabricated using a $0.13{\mu}m$ CMOS process. It is demonstrated that the model and simulation results are consistent with measurement results of fabricated SBD.

• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.34-34
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• 1991

Corrosion behavior of TiN coated steel was studied in terms of thickness of interlayer Ti and TiN coating TiN was are ion plated to a thickness of 1$\mu\textrm{m}$ and 2$\mu\textrm{m}$ respectively with interlayer coating of Ti of 1$\mu\textrm{m}$, 2$\mu\textrm{m}$ and 3$\mu\textrm{m}$. Corrosion resistance of TiN coated steel was evaluated by anodic palarization test in 1N H2SO4 as well as salt spray test. Porosity of each coating was also tested by using SO2 test method. Corrosion current density decreased with increasing TiN coating thickness and Ti interlayer coating markedly enhanced the corrosion resistance. Ti interlayer coating of 2$\mu\textrm{m}$ and 3$\mu\textrm{m}$ prior to 2$\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 2. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ti interlayer. Ti interlayer coating was also very effective in improvement of corrosion resistance under salt atmosphere.

• Journal of the Korean institute of surface engineering
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• v.25 no.1
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• pp.34-39
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• 1992

Corrosion behavior of TiN coated steel was studied in terms of thickness of interlayer Ti and TiN coating. TiN was arc ion plated to a thickness of 1$\mu\textrm{m}$ and 2$\mu\textrm{m}$ respectively with interlayer coating of Ti of 1$\mu\textrm{m}$, $2\mu\textrm{m}$ and $3\mu\textrm{m}$. Corrosion resistance of TiN coated steel was evaluated by anodic palarization test in 1N $H_2$SO$_4$ as well as salt spray test. Porosity of each coating was also tested by using $SO_2$ test method. Corrosion current density decreased with increasing TiN coating thickness and Ti interlayer coating markedly enhanced the corrosion resistance. Ti interlayer coating of $2\mu\textrm{m}$ and $3\mu\textrm{m}$ prior to $2\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 2. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ti interlayer. Ti interlayer coating was also very effective in improvement of corrosion resistance under salt atmosphere.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.509-510
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• 2009

The optical gain of InGaN/GaN multi quantum well (MQW) resonant-cavity light-emitting diode (RC-LED) with different Indium composition and well width in the multi-quantum well was investigated. The optimized optical gain was obtained by simulating active region InGaN/GaN with some test values of well width and Indium composition. By simulation tool, we could simulate on several cases, and then we got exact well width and Indium composition that makes optical gain maximum due to the short wavelength of 470 nm for blue light emission.

• Journal of the Korean institute of surface engineering
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• v.26 no.2
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• pp.55-62
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• 1993

The effect of interlayer coating thickness of Ni and Ti on corrosion behavior was studied for TiN ion plat-ed steel plate. Interlayer coating was carried out in a single and bi-layer to a various thickness combination prior to final TiN coating. Corrosion behavior was evaluated by anodic polarization test in 1N H2SO4 as well as salt spray test. Ni interlayer coating was effectived in reducing corrosion current density of active region and Ti interlayer coating over Ni coating reduced the anodic corrosion current density by an order of 4 with increasing the thickness of Ti up to$ 3\mu\textrm{m}$. The improvement of corrosion resistance by Ni/Ti interlayer coating was attributed to the effective prevention of penetration of active corrosion agent resulting from the inherent corrosion resistance of Ni and Ti. Putting corrosion behavior was observed from salt spray test result for all specimens and corrosion resistance at salt atmosphere was enhanced with increasing Ni and Ti thickness, Cor-lay TiN coating was spalled out by the generation of corrosion products.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.70-73
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• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.251-254
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• 2012

In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.16-22
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• 2011

Al-Co/AlN-Co multilayer films with different layer thicknesses were prepared by using a two-facing target type D.C sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of as-deposited films is very small irrespective of layer thickness. It was found that annealing conditions and layer thickness ratio (LTR) of Al-Co to AlN-Co can control the microstructure as well as the physical properties of the prepared films. The resistivity and magnetization increase and the coercivity decreases with decreasing LTR. High resistivity and sufficient magnetization were obtained for the films with LTR = 0.35. Films having such considerable magnetization and resistivity will be a potential candidate to be used for a high density recording material.

• Journal of the Korean institute of surface engineering
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• v.25 no.2
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• pp.82-89
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• 1992

The effect of interlayer coating of Ni and Ti on corrosion behavior was studied in TiN ion plated steel plate. Interlayer coating was carried out in a single and bi-layer to a various thickness combination prior to final TiN coating of $2\mu\textrm{m}$. Corrosion behavior was evaluated by anodic polarization test in 1N H2SO4 as well as salt spray test. Porosity of each coating was also tested by using SO2 test. Corrosion resistance was improved with increasing the thickness of Ni interlayer coating and Ni-Ti interlayer coating markedly enhanced the corrosion resistance. Ni/Ti interlayer coating of $2\mu\textrm{m}$/2$\mu\textrm{m}$ prior to $2\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 1. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ni and Ti interlayers, Ni/Ti interlayers coating were also very effective in improvement of corrosion resistance under salt atmosphere.