Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)

Optical Society of Korea (한국광학회)
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Optimization of the InGaN/GaN quantum well structure for 470 mm RC-LED with variation of quantum well thickness and Indium composition

양자우물 두께와 인듐조성 변화에 의한 470 mm RC-LED InGaN/GaN 양자우물 구조의 최적화

  • 임재문 (광주과학기술원 정보통신공학과) ;
  • 박창영 (광주과학기술원 정보통신공학과) ;
  • 박광욱 (광주과학기술원 정보통신공학과) ;
  • 이용탁 (광주과학기술원 정보통신공학과)
  • Published : 2009.02.12
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Abstract

The optical gain of InGaN/GaN multi quantum well (MQW) resonant-cavity light-emitting diode (RC-LED) with different Indium composition and well width in the multi-quantum well was investigated. The optimized optical gain was obtained by simulating active region InGaN/GaN with some test values of well width and Indium composition. By simulation tool, we could simulate on several cases, and then we got exact well width and Indium composition that makes optical gain maximum due to the short wavelength of 470 nm for blue light emission.

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