• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.37-44
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• 2018

Solar panels are modules made up of many cells, like the N-type monosilicon, P-type monosilicon, P-type multisilicon, amorphous thin-film silicon, and CIGS solar cells. An efficient photovoltaic (PV) power is important to use to determine what kind of cell types are used because residential solar systems receive attention. In this study, we used 3-type solar panels - such as N-type monosilicon, P-type monosilicon, and CIGS solar cells - to investigate what kind of solar panel on a house or building performs the best. PV systems were composed of 3-type solar panels on the roof with each ~1.8 kW nominal power. N-type monosilicon solar panel resulted in the best power generation when monitored. Capacity Utilization Factor (CUF) and Performance Ratio (PR) of the N-type Si solar panel were 14.6% and 75% respectively. In comparison, N-type monosilicon and CIGS solar panels showed higher performance in power generation than P-type monosilicon solar power with increasing solar irradiance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.287.2-287.2
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• 2014

PV (photovoltaic) has becoming an important industry to invest due to its high robustness and require very little maintenance which goes a long time. Solar cell fabrication involves a few critical processes such as doping to make the N-type and P-type silicon, contact metallization, surface texturization, and anti-reflection coatings. Anti-reflection coating is a kind of surface passivation which ensures the stability, and efficiency of the solar cell. Thus, I will focus on the changes happen to the solar cell due to the reflectance and anti-reflection coating by PC1D. By using the PC1D (solar cell simulation program), I would analysis the effect of reflectance on the N-type cell. At last I will conclude the result regarding what I learned throughout this experiment.

• Journal of the Optical Society of Korea
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• v.19 no.2
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• pp.199-205
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• 2015

We investigated the effects of the thickness and doping concentration in p- and n-type poly-Si layers on the performance of a solar cell based on a carbon fiber in order to improve the energy conversion efficiency of the cell. The short-circuit current density and open-circuit voltage of the carbon fiber-based solar cell were significantly influenced by the thickness and doping concentration in the p- and n-type poly-Si layers. The solar cell efficiency was successfully enhanced to ~10.5%.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.17-20
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• 2018

The dependency of the photovoltaic performance of p-/n-type silicon solar-cells on the metallic contaminant type (Fe, Cu, and Ni) and concentration was investigated. The minority-carrier recombination lifetime was degraded with increasing metallic contaminant concentration, however, the degradation sensitivity of recombination lifetime was lower at n-type than p-type silicon wafer, which means n-type silicon wafer have an immunity to the effect of metallic contamination. This is because heavy metal ions with positive charge have a much larger capture cross section of electron than hole, so that reaction with electrons occurs much more easily. The power conversion efficiency of n-type solar-cells was degraded by 9.73% when metallic impurities were introduced in the silicon bulk, which is lower degradation compared to p-type solar-cells (15.61% of efficiency degradation). Therefore, n-type silicon solar-cells have a potential to achieve high efficiency of the solar-cell in the future with a merit of immunity against metal contamination.

• Current Photovoltaic Research
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• v.4 no.2
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• pp.31-41
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• 2016

n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.

• New & Renewable Energy
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• v.5 no.4
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• pp.34-37
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• 2009

Using six SMD(surface mount device) type AlGaAs/GaAs single junction solar cells connected in series, a power source was fabricated for a white GaN LED. The electrical properties of the power source was measured and analyzed under one sun (100mW/$cm^2$) and various indoor light (300 - 900 lux) conditions. Under 600 lux indoor light condition, output power was 17.06 ${\mu}W$ and it was 30.75 ${\mu}W$ under 900 lux indoor light condition. Using the fabricated solar cell power supply, we have turned on the white GaN LED. It was worked well under 15 ${\mu}W$(at 480 lux) power supplied from solar cell array. This kind of solar cell power supply can be used as a power source for ubiquitous sensor network (USN).

• Current Photovoltaic Research
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• v.7 no.1
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• pp.15-20
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• 2019

Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.18-21
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• 2013

$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.616-621
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• 2022

Numerical simulation is a good way to predict the conversion efficiency of solar cells without a direct experimentation and to achieve low cost and high efficiency through optimizing each step of solar cell fabrication. TOPCon industrial solar cells fabricated with n-type silicon wafers on a larger area have achieved a higher efficiency than p-type TOPCon solar cells. Electrical and optical losses of the front surface are the main factors limiting the efficiency of the solar cell. In this work, an optimization of boron-doped emitter surface and front electrodes through numerical simulation using "Griddler" is reported. Through the analysis of the results of simulation, it was confirmed that the emitter sheet resistance of 150 Ω/sq along the front electrodes having a finger width of 20 ㎛, and the number of finger lines ~130 for silicon wafer of M6 size is an optimized technology for the front emitter surface of the n-type TOPCon solar cells that can be developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.88-90
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• 1990

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].