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http://dx.doi.org/10.21218/CPR.2019.7.1.015

Effect of Electrode Formation Process using E-beam Evaporation on Crystalline Silicon Solar Cell  

Choi, Dongjin (Department of Materials Science and Engineering, Korea University)
Park, Se Jin (Department of Materials Science and Engineering, Korea University)
Shin, Seung Hyun (Department of Materials Science and Engineering, Korea University)
Lee, Changhyun (Department of Materials Science and Engineering, Korea University)
Bae, Soohyun (Department of Materials Science and Engineering, Korea University)
Kang, Yoonmook (KU.KIST Green School, Graduate School of Energy and Environment, Korea University)
Lee, Hae-Seok (KU.KIST Green School, Graduate School of Energy and Environment, Korea University)
Kim, Donghwan (Department of Materials Science and Engineering, Korea University)
Publication Information
Current Photovoltaic Research / v.7, no.1, 2019 , pp. 15-20 More about this Journal
Abstract
Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).
Keywords
n-type silicon solar cell; E-bema Evaporation; Forming Gas Annealing; Metal fraction;
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