• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.144-145
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• 2006

ZnO is a promising material to make high efficiency violet or blue light emitting diodes (LEDs) for its large binding energy (60meV) and big bandgap. But the high quality p-type conduction of ZnO is a dilemma to achieve LEDs with it. In present study, we presented a reliable method to prepare ZnO thin films on (100)silicon substrates by RF magnetron sputtering in the mixture ambient of $N_2$ and $O_2$, accompanying with low pressure annealing in the sputtering chamber in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. X-ray diffraction and Hail effect with Van der Paul method were performed to test ZnO films. Seeback effect was also carried out to identify carrier types in ZnO films and showed the N-doped ZnO film annealed at $800^{\circ}C$ had achieved p-type conduction.

• 한국결정성장학회지
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• 제24권3호
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• pp.106-110
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• 2014

Atomic layer deposition(ALD)을 이용하여 $Al_2O_3$ 박막을 형성하고 이에 대한 패시베이션 특성에 대한 연구를 수행하였다. ALD로 증착된 $Al_2O_3$ 박막은 $400^{\circ}C$ 5분간 후속 열처리 공정 후에도 $Al_2O_3$ - 실리콘 계면 반응 없이 비정질 상태를 유지할 만큼 구조적으로 안정한 특성을 나타내었다. 후속 열처리 후 $Al_2O_3$ 박막의 패시베이션 특성이 향상되었으며, 이는 field effective 패시베이션과 화학적 패시베이션 효과가 동시에 상승에 기인하는 것으로 판단된다. $Al_2O_3$ 박막의 음고정 전하를 정량적으로 평가하기 위해서 후속 열처리 공정을 거친 $Al_2O_3$ 박막을 이용하여 metal-oxide-semiconductor(MOS) 소자를 제작하고 capacitance-voltage(C-V) 분석을 수행하였다. C-V 결과로부터 추출된 flatband voltage($V_{FB}$)와 equivalent oxide thickness(EOT)의 관계식을 통하여 $Al_2O_3$ 박막의 고정음전하는 $2.5{\times}10^{12}cm^{-2}$로 계산되었으며, 이는 본 연구에서 제시된 $Al_2O_3$ 박막 공정이 N-type 실리콘 태양전지의 패시베이션 공정에 응용 가능하다는 것을 의미한다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.148-149
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• 2002

In recent years, semiconductor spintronics has been rapidly developing due to potential device applications, in which the spin of charge carriers (electrons or holes) provides novel functionalities to carry signals and process information. Diluted magnetic semiconductors (DMSs) are well known to exhibit intriguing properties such as carrier-mediated ferromagnetism and spin-dependent transport resulting from the coupling between the charge transport states and the magnetic moments (spin) [1-3]. (omitted)

• Corrosion Science and Technology
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• 제2권1호
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• pp.7-11
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• 2003

Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.55-59
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• 2020

Copper Oxide (CuO) films were deposited on the n-type silicon wafer by rf magnetron sputtering for heterojunction solar cells. And then the samples were treated as a function of the annealing temperature (300-600℃) in a vacuum. Their electrical, optical and structural properties of the fabricated heterojunction solar cells were then investigated and the power conversion efficiencies (PCE) of the fabricated p-type copper oxide/n-type Si heterojunction cells were measured using solar simulator. After being treated at temperature of 500℃, the solar cells with CuO film have PCE of 0.43%, Current density of 5.37mA/㎠, Fill Factor of 39.82%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1556-1558
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• 2003

IGCT devices is a superior devices for power conversion purpose. The basic structure of the IGCT devices is same as that of GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. In this paper, we present static and dynamic characteristics of 4.5 kV PT-type IGCT devices as a function of minority carrier lifetime, n-base thickness and n-buffer thickness. We should choose proper structural parameters for good electrical characteristics of GCT devices.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.53-57
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• 2007

In paper, We evaluated for various diode type ESD protection device using TLP measurement method. An Evaluation diode is divided to Enclosed type and Stripe type as pattern style in extensive. These diodes is split up followed factor that Anode-to-Cathod space, N+ region width, Multi type and Contact to Active space. After a TLP measurement, we can be got the Vt2, It2 by I-V characteristic values. In the results, diode of enclosed type is present relatively higher Current capability(It2) than stripe type in a same voltage conditions. And the Second-breakdown voltage(Vt2) were that Stripe type's diode higher than Enclosed type's diode as have $14{\sim}15V$. Finally we suggest the best diode design condition as ESD protection device using entire consequence.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.17-19
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• 2004

The electrical properties of gate oxides grown in two different processes, which are in 10% nitrous oxide($N_2O$) and in dry oxygen, have been experimentally investigated and compared. It has been observed that the $SiC-SiO_2$ interface-trap density(Dit) measured in nitrided gate oxide has been tremendously reduced, compared to the density obtained from gate oxide grown in dry oxygen. The beneficial effects of nitridation on gate oxides also have been demonstrated in the values of total near interface-trap density and of forward-bias breakdown field. The reasons of these improvements have been explained.