• 대한화학회지
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• 제21권5호
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• pp.320-329
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• 1977

p-Phenylenediamine dihydroperchlorate의 세포상수는 $a=4.79{\pm}0.02,\;b=9.03{\pm}0.02,\;c=7.12{\pm}0.03{\AA},\;{\alpha}=109.4{\pm}0.2,\;{\beta}=79.6{\pm}0.2,\;r=104.6{\pm}0.2^{\circ},\;Z=1$이며 공간군은 $P\={1}$이다. 구조는 Patterson 및 Fourier법으로 해석하였으며 block diagonal 최소자승법으로 정밀화하였따. 등경사 Weissenberg 사진들에서 얻은 387개의 관측된 반사에 대하여 R값은 0.13이었다. 이 물질의 결정구조에서 수소결합은 아미노기와 과염소산 이온 사이에서 이루어져 있으며 2가지 형이 있다. 첫째것은, 한개의 삼지형 N${\cdot}{\cdot}{\cdot}$O 수소결합이고, 둘째것은, 보통형의 2개의 N${\cdot}{\cdot}{\cdot}$O 수소 결합이다. 한개의 p-phenylenediamine 그룹은 실험오차 내에서 평면이며 12개의 과염소산이온에 결합되어 있다. 그중 10개의 과염소산이온은 수소결합으로 연결되어 있으며 2개는 van der Waals 힘들로 접촉되어 있다. 한개의 과염소산이온은 6개의 p-phenylenediamine과 4개의 과염소산이온에 의하여 둘러싸여 있따. 6개의 p-phenylenediamine 그룹 중 5개는 수소결합이 되어있고 나머지는 van der Waals 힘으로 접촉되어 있다.

• 공업화학
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• 제24권3호
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• pp.314-319
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• 2013

본 연구에서는 휘발성 유기화합물 제거특성을 향상시키고자 졸겔법 및 urea의 고상 열처리법을 이용하여 질소가 도핑된 $TiO_2$ ($N-TiO_2$) 코팅 활성탄소 펠렛을 제조하였다. 또한 이 활성탄소 펠렛의 가시광 활성능 평가를 위하여 light emitting diods (LED)를 조사하였고, gas chromatography를 이용하여 벤젠가스 제거능을 측정하였다. Titanium tetra isopropoxide 함량이 증가함에 따라 활성탄소 펠렛 표면에 $TiO_2$ 코팅량이 증가되고, 비표면적이 감소됨을 SEM 및 BET 결과를 통해 각각 확인하였다. 벤젠가스 제거 결과, ACP10의 벤젠가스에 대한 파과점 도달시간이 ACP에 비하여 약 2배정도 증가되었다. 이는 활성탄소 펠렛의 표면에 코팅된 $N-TiO_2$가 LED 광원 조사 하에서 더 효과적으로 벤젠가스를 분해하였기 때문으로 판단된다.

• 한국재료학회지
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• 제9권5호
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• 한국재료학회지
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• 제26권6호
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• 전자공학회논문지
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• 제54권1호
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• pp.21-25
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• 2017

본 연구에서는 최근 차세대 전력 반도체로 관심을 받고 있는 단결정 ${\beta}-Ga_2O_3$를 이용한 쇼트키 배리어 다이오드 제작 및 특성 분석을 수행하였다. 쇼트키 배리어 다이오드는 Sn으로 도핑된 $2{\mu}m$ 두께의 저농도 N 타입 에피층 상에 Pt/Ti/Au 쇼트키 접합으로 제작되었으며 측정된 특성은 > 180 V의 항복전압, $1.26m{\Omega}{\cdot}cm^2$의 온 저항, 그리고 1 V의 순 방향 전압에서 $77A/cm^2$, 1.5 V에서 $473A/cm^2$의 순방향 전류 특성을 나타내었다. 본 연구를 통하여 단결정 ${\beta}-Ga_2O_3$의 전력반도체 활용 가능성을 확인 할 수 있었다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.346-350
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• 2002

The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of N $d_{1.8-x}$C $a_{x}$B $a_{2.4}$C $u_{3.4}$ $O_{y}$ (x = 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1% $O_2$ in Ar. Magnetization measurements revealed that the critical temperatures( $T_{c}$) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x = 0.0 to 0.15, respectively, and thus critical current densities( $J_{c}$) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in NdB $a_2$C $u_3$ $O_{y}$(Nd123) and N $d_4$B $a_2$C $u_2$ $O_{10}$(Nd422) were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of $T_{c}$ is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.t.opant.t.t.t.t.t.

• 한국진공학회지
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• 제13권1호
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• pp.9-13
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• 2004

본 연구에서는 P 형과 N 형의 특성을 모두 갖추 것으로 알려진 perylene의 특성을 연구하였다. 특히 구조적 특성과 전기적 특성 향상을 위하여 초고진공 상태에서 $SiO_2$ 기판 위에 perylene 박막을 제작하였는데 증착 속도에 따른 박막의 특성 향상 여부를 살펴보기 위하여 0.1 $\AA$/s 와 1 $\AA$/s로 변화시켜가며 박막을 제작하였다. 박막의 결정성과 표면 특성은 X-선 회절과 원자 간력 현미경을 이용하여 살펴보았는데, 1 $\AA$/s로 증착된 perylene박막이 더 우수한 결정성과 표면 분포를 보였다. 박막의 전기적 특성 확인을 위하여 heavily doped 실리콘 기판 위에 $SiO_2$와 gold를 이용한 perylene 박막 트랜지스터를 제작하였다. 얻어진 perylene 박막 트랜지스터는 P 형의 반도체적 성질을 나타내었으며, 전류-전압 특성 곡선을 이용하여 $2.23\times10^{-5}\textrm{cm}^2$/Vs 의 전하 이동도를 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.