• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

• Journal of the Korean Applied Science and Technology
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• v.15 no.4
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• pp.21-25
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• 1998

Organic-based electroluminescent devices have attracted lots of interests because of their possible application as a large-area flat panel display. Polyimides have been used for photo-alignment in LCD(Liquid Crystal Display). However, the devices used in this study were fabricated with polyimide doped with N,N'-Diphenyl-N,N'-di(m-tolyl)-benzidine(TPD) (3, 10, 30wt%) for electroluminescent hole tranforting layer(EHTL). The photochemical and physical properties of EHTL was studied. The film thicknesses were reduced under illumination with UV light. Polyimide films doped with TPD(3wt%) was irradiated and the electrical properties of the films were studied.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1650-1653
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• 2007

We demonstrate fluorescent green organic lightemitting diodes employing a rhenium oxide ($ReO_3$)-doped N,N-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transporting layer (HTL). The devices exhibit significantly reduced driving voltages as well as prolonged lifetime. Details of $ReO_3$ doping effects are described in terms of charge transfer complex and stabilization of HTL morphology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.235-238
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• 2009

This paper describes the mechanical properties of poly (Polycrystalline) 3C-SiC thin films with $N_2$ in-situ doping. In this work, the poly 3C-SiC film was deposited by APCVD (Atmospheric Pressure Chemical Vapor Deposition) method using single-precursor HMDS (Hexamethyildisilane: $Si_2(CH_3)_6)$ at $1200^{\circ}C$. The mechanical properties of doped poly 3C-SiC thin films were measured by nono-indentation according to the various $N_2$ flow rate. In the case of 0 sccm $N_2$ flow rate, Young's Modulus and hardness were obtained as 285 GPa and 35 GPa, respectively. Young's Modulus and hardness were decreased according to increase of $N_2$ flow rate. The crystallinity and surface roughness was also measured by XRD (X-Ray Diffraction) and AFM (Atomic Force Microscopy), respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.19-22
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• 1999

N-doped and low-hydrogenated DLC thin films were coated on the Mo-tip FEAs in order to improve the field emission performance and their electrical properties were evaluated. The fabricated devices showed improved field emission performance in terms of turn-on voltage, emission current and current fluctuation. This result might be caused both by the shift of Fermi level toward conduction band by N-doping and by the inherent stability of DLC material. Furthermore, the transconductance of the DLC-coated Mo-tip FEA and electrical conductivity and optical band-gap of the deposited DLC films were investigated.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.25-31
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• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.421-422
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• 2013

Recently, ZnO has received attentionbecause of its applications in optoelectronics and spintronics. In order to investigate deep level defects in ZnO, we used N-doped ZnO with various of the N-doping concentration. which are reference samples (undoped ZnO), 27%, 49%, and 88%-doped ZnO. Photoinduced current transient spectroscopy (PICTS) measurement was carried out to find deep level traps in high resistive ZnO:N. In reference ZnO sample, a deep trap was found to located at 0.31 (as denoted as the CO trap) eV below conduction band edge. And the CN1 and CN2 traps were located at 0.09, at 0.17 eV below conduction band edge, respectively. In the case of both annealed samples at 200 and $300^{\circ}C$, the defect density of the CO trap increases and then decreases with an increase of N-doping concentration. On the other hands, the density of CN traps has little change according to an increase of N-doping concentration in the annealed sample at $300^{\circ}C$. According to the result of PICTS measurement for different N-doping concentration, we suggest that the CO trap could be controled by N-doping and the CN traps be stabilized by thermal annealing at $300^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.227.1-227.1
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• 2015

산업이 발달하면서 다양한 화학물질이 배출되고 이로 인하여 환경이 오염되고 있으며, 특히, 대부분의 유기 화합물은 대기오염에 많은 영향을 주는 물질로 알려져 있다. 최근 유기 화합물을 제거하기 위해서 UV와 가시광에서 반응하는 광촉매 연구가 진행되고 있다. 본 연구에서는 밴드갭에 변화를 주는 doped $TiO_2$와 가시광에서 반응하는 조촉매를 이용하여 광촉매의 특성을 향상시키는 coupled $TiO_2$를 제조하였다. Doped $TiO_2$를 제조하기 위해서 비금속 물질인 질소(nitrogen)을 사용하였고, coupled $TiO_2$는 graphine oxide(GO)를 환원하여 $TiO_2$-RGO 촉매를 제조하였다. N-$TiO_2$와 $TiO_2$-RGO의 광학 특성을 평가하기 위해서 UV/Vis 분광광도계를 사용하였다. Methylene blue(MB)와 methyl orange(MO)가 분해되는 반응을 통해서 N-$TiO_2$와 $TiO_2$-RGO의 광촉매 특성을 평가하였다. 또한, MB와 MO 분해 테스트에 395 nm long pass filter를 이용하여 가시광에서의 광촉매 활성을 평가하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.