Low driving voltage and high stability organic light-emitting diodes with rhenium oxide-doped hole transporting layer

  • Leem, Dong-Seok (Dept. of Materials Science and Engineering and OLED center, Seoul National University) ;
  • Park, Hyung-Dol (Dept. of Materials Science and Engineering and OLED center, Seoul National University) ;
  • Kang, Jae-Wook (Surface Technology Research Center, Korea Institute of Machinery and Materials (KIMM)) ;
  • Lee, Se-Hyung (Dept. of Materials Science and Engineering and OLED center, Seoul National University) ;
  • Kim, Jang-Joo (Dept. of Materials Science and Engineering and OLED center, Seoul National University)
  • Published : 2007.08.27

Abstract

We demonstrate fluorescent green organic lightemitting diodes employing a rhenium oxide ($ReO_3$)-doped N,N-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transporting layer (HTL). The devices exhibit significantly reduced driving voltages as well as prolonged lifetime. Details of $ReO_3$ doping effects are described in terms of charge transfer complex and stabilization of HTL morphology.

Keywords