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http://dx.doi.org/10.4313/JKEM.2009.22.3.235

Mechanical Properties of in-situ Doped Polycrystalline 3C-SiC Thin Films by APCVD  

Kim, Kang-San (울산대학교 전기전자정보시스템공학부)
Chung, Gwiy-Sang (울산대학교 전기전자정보시스템공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.3, 2009 , pp. 235-238 More about this Journal
Abstract
This paper describes the mechanical properties of poly (Polycrystalline) 3C-SiC thin films with $N_2$ in-situ doping. In this work, the poly 3C-SiC film was deposited by APCVD (Atmospheric Pressure Chemical Vapor Deposition) method using single-precursor HMDS (Hexamethyildisilane: $Si_2(CH_3)_6)$ at $1200^{\circ}C$. The mechanical properties of doped poly 3C-SiC thin films were measured by nono-indentation according to the various $N_2$ flow rate. In the case of 0 sccm $N_2$ flow rate, Young's Modulus and hardness were obtained as 285 GPa and 35 GPa, respectively. Young's Modulus and hardness were decreased according to increase of $N_2$ flow rate. The crystallinity and surface roughness was also measured by XRD (X-Ray Diffraction) and AFM (Atomic Force Microscopy), respectively.
Keywords
Poly 3C-SiC; In-situ doping; Mechanical properties; Nano-indentation;
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Times Cited By KSCI : 3  (Citation Analysis)
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