• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Journal of the Korean Society for Nondestructive Testing
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• v.37 no.1
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• pp.1-6
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• 2017

In this study, a terahertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of $30^{\circ}$ were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from $10^{14}$ to $10^{18}$ in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2287-2294
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• 2012

Deep blue fluorescent host materials based on a novel spiro[benzo[c]fluorene-7,9'-fluorene] core structure with side aromatic wings in the 5- and 9-positions, namely, 5,9-di(naphthalen-2-yl)spiro[benzo[c]fluorene-7,9'-fluorene] (DN-SBFF), 5,9-bis(4-t-butylphenyl)spiro[benzo[c]fluorene-7,9'-fluorene] (BP-SBFF), and 5,9-bis(4-fluorophenyl)spiro[benzo[c]fluorene-7,9'-fluorene] (FP-SBFF), were designed and successfully prepared using the Suzuki reaction. The physical properties of these materials and their EL characteristics as blue host materials doped with N,N,N',N'-tetraphenylspiro[benzo[c]fluorene-7,9'-fluorene]-5,9-diamine (TPA-SBFF) were investigated. The device used comprised ITO/N,N'-diphenyl-N,N'-bis[4-(phenyl-m-tolyl-amino)phenyl]-biphenyl-4,4'-diamine (DNTPD)/N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB)/(FP-SBFF):dopant x%/tris(8-hydroxyquinoline)aluminum ($Alq_3$)/LiF. The device obtained using FP-SBFF doped with TPA-SBFF showed high color purity (0.13, 0.18) and an efficiency of 6.61 cd/A at 7 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.403-406
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• 2000

The piezoelectric properties and the doping effect of N $b_2$ $O_{5}$ and Mn $O_2$for 0.95PbZ $r_{x}$ $Ti_{x}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$ compositions have been investigated. In the composition of 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$the Values Of $k_{p}$ find and $\varepsilon$$_{33}$ $^{T}$ are maximized, but $Q_{m}$ Was minimized ( $k_{p}$ =0.51, $Q_{m}$ =1750). The grain size was suppressed and the uniformity of grain was improved with doping concentration of N $b_2$ $O_{5}$ for 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.005Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$sample. The values of $k_{p}$ increased and the values of $Q_{m}$ slightly decreased when 0.5 wt% of N $b_2$ $O_{5}$ is doped. And the values of $k_{p}$ was the same formation of the N $b_2$ $O_{5}$ dopant when 0.5 wt% of M $n_2$ $O_{5}$ is doped. But the values of $Q_{m}$ was deeply decreased when 0.5 wt% of Mn $O_2$is doped. As a experiment results under high electric field driving, this piezoelectric ceramics are very stable. Conclusively, piezoelectric ceramic compsiton investigated at this paper is suitable for application to high power piezoelectric devices.. devices..ices.. devices..

• Korean Journal of Materials Research
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• v.32 no.5
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• pp.270-279
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• 2022

In this study, N/S co-doped carbon felt (N/S-CF) was prepared and characterized as an electrode material for electric double-layer capacitors (EDLCs). A commercial carbon felt (CF) was immersed in an aqueous solution of thiourea and then thermally treated at 800 ℃ under an inert atmosphere. The prepared N/S-CF showed a large specific surface area with hierarchical pore structures. The electrochemical performance of the N/S-CF-based electrode was evaluated using both 3-electrode and 2-electrode systems. In the 3-electrode system, the N/S-CF-based electrode showed a good specific capacitance of 177 F/g at 1 A/g and a good rate capability of 41% at 20 A/g. In the 2-electrode system (symmetric capacitor), the freestanding N/S-CF-based electrode showed a specific capacitance of 275 mF/cm² at 2 mA/cm², a rate capability of 62.5 % at 100 mA/cm², a specific power density of ~ 25,000 mW/cm² at an energy density of 23.9 mWh/cm², and a cycling stability of ~ 100 % at 100 mA/cm² after 20,000 cycles. These results indicate the N/S co-doped carbon felts can be a promising candidate as a new electrode material in a symmetric capacitor.

• Journal of Powder Materials
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• v.29 no.6
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• pp.492-498
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• 2022

N-doped Na₂Ti₆O₁₃@TiO₂ (denoted as N-NTO@TiO₂) composites are successfully synthesized using a simple two-step process: 1) ball-milling of TiO₂ with Na₂CO₃ followed by heat treatment at 900℃; 2) mixing of the prepared Na₂Ti₆O₁₃ with titanium isopropoxide and calcining with urea at 500℃. The prepared composites are characterized using XRD, SEM, TEM, FTIR, and BET. The N-NTO@TiO₂ composites exhibit well-defined crystalline and anatase TiO₂ with exposed {101} facets on the external surface. Moreover, dopant N atoms are uniformly distributed over a relatively large area in the lattice of the composites. Under visible light irradiation, ~51% of the aqueous methylene blue is photodegraded by N-NTO@TiO₂ composites, which is higher than the values shown by other samples because of the coupling effects of the hybridization of NTO and TiO₂, N-doping, and presence of anatase TiO₂ with exposed {101} facets.

• Journal of the Korean Chemical Society
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• v.40 no.3
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• pp.167-172
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• 1996

For the preparation of single-crystalline GaN film, heteroepitaxial growth on a sapphire substrate was carried out by halide vapor phase epitaxy(HVPE) method. The resulting GaN films showed n-type conductivity. The insulator type GaN film was made by doping with Zn(acceptor dopant), which showed emission peaks around 2.64 and 2.43 eV. The result of this study indicates that GaN can be obtained in an epitaxial structure of MIS(metal-insulator-semiconductor) junction. The observed data are regarded as fundamental in developing GaN epitaxial films for light emitting devices of hetero-structure type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1475-1482
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• 2011

New spiro[benzo[c]fluorene-7,9'-fluorene] (SBFF)-based blue host materials, 9-phenyl-SBFF (BH-4P) and 5,9-diphenyl-SBFF (BH-6DP), were successfully prepared by spiro-formation of 9-phenyl-7H-benzo[c]fluoren-7-one with 2-bromobiphenyl via lithiation and reaction of 5,9-dibromo-SBFF with phenylboronic acid through the Suzuki reaction, respectively. Diphenyl-[4-(2-[1,1;4,1]terphenyl-4-yl-vinyl)-phenyl]-amine (BD-1) and N,N-diphenyl-N',N'-diphenyl-SBFF-5,9-diamine (BD-6DPA) were used as dopant materials. Blue OLEDs with the configuration ITO/N,N'-bis-[4-(di-m-tolylamino)phenyl]-N,N'-diphenylbiphenyl-4,4'-diamine (DNTPD)/bis[N-(1-naphthyl)-N-phenyl]benzidine (NPB)/host:5% dopant/SFC-137/Al-LiF were prepared from the two host materials doped with BD-1 and BD-6DPA dopants and the devices composed of BH-4P and BH-6DP doped with BD-6DPA showed blue EL spectra at 458 and 463 nm at 7 V and luminance efficiencies of 4.58 and 4.88 cd/A, respectively.

• Journal of Environmental Science International
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• v.16 no.6
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• pp.683-688
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• 2007

In this study, N doped $TiO_2$ (TiO-N) thin film was prepared by DC magnetron sputtering method to show the photocatalytic activity in a visible range. Various gases (Ar, $O_2\;and\;N_2$) were used and Ti target was impressed by 1.2 kW -5.8 kW power range. The hysteresis of TiO-N thin film as a function of discharge voltage wasn't observed in 1.2 and 2.9kW of applied power. Cross sections and surfaces of thin films by FE-SEM were tiny and dense particle sizes of both films with normal cylindrical structures. XRD pattern of $TiO_2$ and TiO-N thin films was appeared by only anatase peak. Red shift in UV-Vis adsorption spectra was investigated TiO-N thin film. Photoactivity was evaluated by removal rate measurement of suncion yellow among reactive dyes. The photodegradation rate of $TiO_2$ thin film on visible radiation was shown little efficiency but TiO-N was about 18%.