• Advances in nano research
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• v.13 no.1
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• pp.13-28
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• 2022

The pumpability of the grouts is significant issue in concept of the rheological and workability properties during penetrating to voids and cracks. To improve the fluidity features of the grout mixes, the usage of Colloidal Nano Particular Powders (CNPPs) with mineral additives such as fly ash (FA) can contribute. Therefore, the main purpose of this study can be explained as investigating the usage effects of four types of Colloidal Nano Particular Powders (n-TiO₂, n-ZnO, n-Al₂O₃ and n-SiO₂) as nano additives on the rheological, workability and bleeding properties of cement-based grout incorporated with fly as. Test results showed that the usage of FA in the grout samples positively contribute to increase on the fluidity of the grout samples as expected. The dilatant behavior was observed from the results for all mixes. Observing the effect of nano-sized additives in such cement-based grout mixtures with high fluidity has presented remarkable effects in this study.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.309-309
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• 2013

기존의 CIGS 태양전지는 window 층(GZO/ZnO/CdS)에서의 투과 및 반사 손실을 줄이기 위하여 MgF2를 이용한 AR (Anti Reflection) 층을 적용하여 cell을 제작하고 있다. 현재 단위공정을 줄이고 시간적 경제적 비용을 절감하기위해 무반사 코팅층 없이 표면의 구조를 변화 시키거나 CIGS 태양전지의 window 층만으로 cell 구조에 적용하는 연구가 많이 진행되고 있다. 본 연구는 AR층과 window층 역할을 동시에 만족하는 일체화된 window층 두께를 설계하고 성장한 후, window층의 열처리 전후의 구조적, 광학적 및 전기적 특성을 비교 평가하였다. Macleod simulation을 이용하여 window 층을 설계한 후, RF magnetron sputtering법을 이용하여 상온성장 시킨 후 N2 분위기에서 후열처리 조건에 따른 박막의 구조적, 전기적 및 광학적 특성을 변화를 X-ray diffractometer, Field emission-scanning electron microscope, Atomic force microscopy, 4 point probe, Hall 측정, 투과도 및 반사도등으로 비교 평가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Journal of Integrative Natural Science
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• v.6 no.2
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• pp.76-81
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• 2013

ZnO nanoparticles and vinyl pyridine were added to the mixture of MMA (methyl methacrylate), HEMA (2-hydroxy ethyl methacrylate) and NVP (N-vinylpyrrolidone) in a mould at various concentrations. Cross-linker EGDMA (ethyleneglycoldimethacrylate) and AIBN (azobisisobutyronitrile) initiator were finally added to the mixture and then heated at $80^{\circ}C$ for 60 min to prepare high-performance hydrogel ophthalmic lens. The physical properties of the hydrogel ophthalmic material were investigated by measuring the average value of refractive index, water content and optical transmittance. The refractive index of 1.429~1.450, water content of 34~41%, and visible transmittance of 78~90% were obtained. The material is possibly used to manufacture UV-block hydrogel contact lens.

• Bulletin of the Korean Chemical Society
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• v.20 no.9
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• pp.1035-1039
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• 1999

Manganese-activated zincgallate (Zn1-xMnxGa2O4) phosphor as a green phosphor was readily prepared by coprecipitation in aqueous basic solution of metal salts. The obtained product converted to amorphous zincgallate even at 300℃, followed by crystallization at 1000 ℃. The pyrolyzed phosphor showed fine particle, then reduction treatment at 900 ℃ changed into homogeneous shape with slight grain growth(particle size less than 0.5 mm). The photoluminescence characteristics of the zincgallates have been investigated as a function of dopant concentrations, reducing atmospheres and temperatures. Under UV excitation the phosphors displayed the highest green emission efficiency at 504 nm when the specimen oxidized at 1000 ℃ was reduced at 900 ℃ in a mild hydrogen atmosphere (97% N2, 3% H2) with a flow rate of 100 ml/min.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.1-6
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• 2008

Thermoelectric properties of calcium cobalt layer structure oxide system, $Ca_3Co_2O_6$ and $Ca_3Co_4O_9$ were investigated at the temperature range of 300 to 1000K for the application of thermoelectric generation. In the composition, the Ca site was partially substituted with Bi, Sr, La, K and the Co site was partially substituted with Mn, Fe, Ni, Cu, Zn. The thermoelectric properties of Bi substituted $Ca_3Co_4O_9$. $Ca_{2.7}Bi_{0.3}Co_4O_9$ for electrical conductivity, Seebeck coefficient and power factor were $85.4({\Omega}$cm)^{-l}, $176.2{\mu}V/K$ and $265.2{\mu}W/K^m$, respectively. The unit thermoelectric couple was fabricated with the p-type of $Ca_{2.7}Bi_{0.3}Co_4O_9$ and n-type ($Zn_{0.98}Al_{0.02}$)O thermoelectrics whose figure-of-merit(Z) were $0.87{\times}10^{-4}/K$ and $0.41{\times}10^4/K$, respectively. The generated thermoelectric power was about 30mV at the temperature difference of 120K in the unit thermoelectric couple.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.8-16
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• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.335-340
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• 2001

$Ga_2O_3$(1 wt%)-doped ZnO(GZO) thin films were grown on ${\alpha}-Al_2O_3$ (0001) by rf magnetron sputtering at $510^{\circ}C$, whose crystal structure was polycrystalline. As-grown GZO thin film shows poor electrical properties and photoluminescence (PL) spectra. To improve these properties, GZO thin films were annealed at 800-$900^{\circ}C$ in $N_2$atmosphere for 3 min. After the rapid thermal annealing(RTA), deep defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resisitivity of $2.6\times10^{-4}\Omega$/cm with $3.9\times10^{20}/\textrm{cm}^3$ carrier concentration and exceptionally high mobility of 60 $\textrm{cm}^2$/V.s. These improved physical properties are explained in terms of translation of doped-Ga atoms from interstitial to substitutional site.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.196-200
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• 2005

In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.