• Korean Journal of Materials Research
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• v.16 no.4
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• pp.248-252
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• 2006

An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.

• Journal of the Korea Organic Resources Recycling Association
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• v.22 no.2
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• pp.17-26
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• 2014

In this study, the adsorption efficiency of mixed heavy metals from an aqueous solution was examined using bentonite. The physical and chemical properties of bentonite was analyzed via scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FT-IR), Further, heavy metal adsorption was characterized using Freundlich and Langmuir equations. Equilibrium adsorption data were fitted well to the Langmuir model for bentonite. The adsorption uptake of heavy metals was high and followed the order $Pb^{2+}$ > $Cu^{2+}$ > $Cd^{2+}$ > $$Zn^{2+}{\sim_=}Ni^{2+}$$. The results also showed that adsorption uptake slightly increased as increasing pH from 6 to 10. The bentonite surface was observed viay SEM and FT-IR; Si-O and Si-O-Al were found to be the main functional groups by FT-IR analysis. From these results, the adsorption mechanisms of heavy metal were not only surface adsorption and ion exchange, but also surface precipitation. Thus, bentonite could be a useful adsorbent for treating heavy metal in aqueous solution.

• Journal of the Korean Applied Science and Technology
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• v.33 no.1
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• pp.23-29
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• 2016

Zinc oxide of hexagonal wurzite, is known as n-type semiconductor. It has a wide band gap energy of 3.37 eV and large exciton binding energy of 60 meV. It can be widely applied to gas sensors, laser diodes, dye-sensitized solar cells and degradation of dye waste. The use of microwave hydrothermal synthesis brings a rapid reaction rate, high yield, and energy saving. Amine additives control the different particle shapes because of the chelate effect and formation of hydroxide ion. In this study, zinc nitrate hexahydrate was used as zinc precursor. In addition, ethanolamine, ethylenediamine, diethylenetriamine, and hexamethylenetetramine are used as shape control agent. The pH value was controlled as 11 by NaOH. The shapes of zinc oxide are star-like, rod, flower-like, and circular cone. In order to analyze physical, chemical, and optical properties of ZnO with diverse amine additives, we used XRD, SEM, EDS, FT-IR, UV-Vis spectroscopy, and PL spectroscopy.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.314-315
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• 2012

최근들어 반도체 및 디스플레이 소자의 구조가 복잡해짐에 따라 다층 박막 증착에 대한 중요성이 날로 증가하고 있다. 본 연구에서는 다층 박막을 효율적으로 증착하기 위해 회전이 가능한 육각건을 개발하였고, 이를 이용하여 에너지 절약형 단열 유리 증착 공정을 구현 하였다. 개발된 회전형 육각건은 기존 플래너형 스퍼터링 건의 확장형으로서 최대 6개의 물질을 하나의 챔버에서 증착이 가능하도록 구성되었다. 기존 공정의 경우 서로 다른 물질 증착을 위해서는 각각의 챔버가 필요한 반면, 회전형 육각건을 이용할 경우 하나의 챔버에서 공정을 진행할 수 있어 원가 절감이 가능하다. Fig. 1은 개발된 회전형 육각건의 모식도로서, 스퍼터링 타겟이 장착 가능한 건과, 회전부로 구성되어 있다. 이를 이용하여 투명전극-금속-투명전극-금속-절연체로 구성되어 있는 에너지 절약형 단열 유리용 다층 박막 증착 공정을 개발하였다. 이때 알루미늄이 도핑된 ZnO (AZO)는 RF 마그네트론 스퍼터로, 금속 박막은 DC 스퍼터, $SiO_2$ 및 SiN과 같은 절연 박막은 $O_2$와 $N_2$ 분위기에서 반응성 RF 스퍼터로 각각 증착하였다. Base pressure는 $10^{-7}$ torr였으며, 증착 시 공정 압력은 1~3 mTorr로 조정하였다. 증착 균일도 향상을 위해 20 rpm의 속도로 기판을 회전시켰다. Fig. 2(a)는 ZnO-Ag-ZnO 구조로 이루어진 다층 박막의 단면을 관찰한 투과전자 현미경 사진으로 각 층간의 계면이 뚜렷하게 나타남을 확인할 수 있으며, 각 층간의 intermixing 현상이 발생하지 않음을 확인 가능하다. 이를 보완하기 위해 Fig. 2(b)에서 보는 바와 같이 XPS를 이용하여 depth profile을 측정하였다. 각 층에서 서로 다른 물질이 발견되는 현상, 즉 교차 오염이 발생함에 따라 나타나는 intermixing 없이 거의 순수한 형태의 ZnO, Ag 박막 성분이 검출되었다. 이는 6개의 서로 다른 물질이 장착된 회전형 육각건을 이용하여 고 품질의 다층 박막 증착이 가능함을 제시하는 결과이다. 증착된 다층 박막의 균일도는 3.8%, 가시광선 영역에서 80% 이상의 투과도, 면저항 값은 3 ${\Omega}/{\Box}$ 이하를 보임으로서 에너지 절약형 단열 유리로서의 사양을 만족시키는 결과를 제시하였다.

• Journal of Environmental Science International
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• v.20 no.6
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• pp.687-700
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• 2011

A new $N_3-O_2$ pentadentate ligand, H-BHPT, was synthesized. Hydrochloric acid salts of Br-BHPT, Cl-BHPT, $CH_3O$-BHPT and $CH_3$-BHPT, having Br-, Cl-, $CH_{3-}$ and $CH_3O-$ substituents at the para position of the phenol hydroxyl group of H-BHPT were synthesized. Hydrochloric acid salts of 3OH-BHPT and 4OH-BHPT, having different position of the phenol hydroxyl group of H-BHPT were also synthesized. The synthesis of each ligand was confirmed by C. H. N. atomic analysis and $^1H$ NMR, $^{13}C$ NMR, UV-visible, and mass spectra. The calculated proton dissociation constants ($log{K_n}^H$) of the phenol hydroxyl group and secondary amine group of the synthesized $N_3-O_2$ ligands showed five steps of the proton dissociations. The order of the overall proton dissociation constants ($log{\beta}_p$) of the ligands was Br-BHPT < Cl-BHPT < H-BHPT < $CH_3O$-BHPT < $CH_3$-BHPT. The order agreed with that of Hammett substituent constants (${\delta}_p$). However, dissociation steps of 3OH-BHPT were four and that of 4OH-BHPT was three. The calculated stability constants ($logK_{ML}$) between the ligands and transition metal ions agreed with the order of $log{\beta}_p$ values of the ligands. The order of the stability constants between the transition metal ions with the synthesized ligands was Co(II) < Ni(II) < Cu(II) > Zn(II) > Cd(II) > Pb(II). The order agreed well with that of the Iriving-Williams.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.23-27
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• 2008

We have investigated the effect of annealing on the structural and optical properties of polycrystalline Ga doped ZnO (GZO) films grown on glass substrates by RF-magnetron sputter at room temperature. The structural and optical properties of as-grown GZO films were characterized and then samples were annealed at $400{\sim}600^{\circ}C$ in $N_2$ ambient for 30, 60 minutes, respectively. The field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) were used to measure the grain size and the crystalline quality of the films. We found that the crystalline quality was improved and the grain size tends to be increased. The optical properties of GZO thin films were analyzed by UV-VIS-NIR spectrophotometers. It is found that optical properties of thin films are increased by annealing and can be used for transparent electrode application. We believe that the appropriate post-growth heat treatment could be contributed to the improvement of GZO-based devices.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.217-222
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• 2012

The synthesis of dimethyl carbonate(DMC) is a promising reaction for the use of naturally abundant carbon dioxide. DMC has gained considerable interest owing to its versatile chemical reactivity and unique properties such as high oxygen content, low toxicity, and excellent biodegradability. In this study, the synthesis of DMC through the transesterification of ethylene carbonate(EC) with methanol was investigated by using ionic liquid and metal oxide catalysts. The screening test of different catalysts revealed that choline hydroxide ([Choline][OH]) and 1-n-butyl-3-methyl imidazolium hydroxide([BMIm][OH]) had better catalytic performance than metal salts catalysts such as MgO, ZnO and CaO. The effects of reaction parameters such as reaction temperature, MeOH/EC mole ratio, and carbon dioxide pressure on the reactivity of [Choline][OH] catalyst were discussed. High temperature and high MeOH/EC mole ratio were favorable for high conversion of EC. However, the yield of DMC showed a maximum when carbon dioxide pressure was 1.34 MPa, and then it decreased for higher carbon dioxide pressure. Zinc chloride($ZnCl_2$) was used as co-catalyst with the ionic liquid catalyst. The mixed catalyst showed a synergy effect on the EC conversion and DMC yield probably due to the acid-base properties of the catalysts.

• ETRI Journal
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• v.31 no.6
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.