• Journal of Powder Materials
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• v.28 no.2
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• pp.143-149
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• 2021

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x(ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700℃. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.18-24
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• 2004

Ni-Zn ferrite powder was synthesized from metal nitrates, Fe(N $O_3$)$_3$$.$9 $H_2$O, Ni(N $O_3$)$_2$$.$6 $H_2$O, Zn(N $O_3$)$_2$$.$6 $H_2$O by wet direct process to make high permeability material. The composition of the ferrite powder is (N $i_{0.284}$F $e_{0.053}$Z $n_{0.663}$)F $e_2$ $O_4$. Ni-Zn ferrite powder is compounded by precipitating metal nitrates with NaOH in vessel at 90$^{\circ}C$ synthetic temperature for 8 hours. Calcination temperature and sintering temperature were 700$^{\circ}C$ and 1150$^{\circ}C$-1250$^{\circ}C$ respectively for 2 hours. The same compound powder was extracted from metal oxide by wet ballmilling. We compared the properties of powder and the electromagnetic characteristics of the sintered cores obtained from the two different processes. Wet direct process produces smaller particle size with narrower distribution and higher purified ferrite which cores has high permeability and high magnetization.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.68-74
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• 2018

All transparent UV photodetector based on ZnO was fabricated with structure of NiO/ZnO/$SnO_2$/ITO by using RF and DC magnetron sputtering system. ZnO was deposited with 4 inch ZnO target (purity 99.99%) for a quality film. In order to build p-n junction up, p-type NiO was formed on n-type ZnO by using reactive sputtering method. The indium tin oxide (ITO) which is transparent conducting oxide (TCO) was applied as a transparent electrode for transporting electrons. To improve the UV photodetector performance, a functional $SnO_2$ layer was selected as an electron transporting and hole blocking layer, which actively controls the carrier movement, between ZnO and ITO. The photodetector (NiO/ZnO/$SnO_2$/ITO) shows transmittance over 50% as similar as the transmittance of a general device (NiO/ZnO/ITO) due to the high transmittance of $SnO_2$ for broad wavelengths. The functional $SnO_2$ layer for band alignment effectively enhances the photo-current to be $15{\mu}A{\cdot}cm^{-2}$ (from $7{\mu}A{\cdot}cm^{-2}$ of without $SnO_2$) with the quick photo-responses of rise time (0.83 ms) and fall time (15.14 ms). We demonstrated the all transparent UV photodetector based on ZnO and suggest the route for effective designs to enhance performance for transparent photoelectric applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1043-1047
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• 2005

To investigate the electrical properties of the ZnO films which are interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $2.1\;{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into the undoped ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3 hr. We found the diffusion condition of the conductive ZnO films which had n- and p-type properties. Our ZnO thin film has not only very high carrier concentration of above $10^{17}/cm^3$ but also low resistivity of below $2.0\times10^{-2}\;{\Omega}cm$.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.92-99
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• 1993

ZnO thin films were depositsd by Plasma enhanced CVD (PUW) using Diethylzinc and N2O gas, and micro-structue of ZnO thin films were investigated ZnO thin films composed of micro-crystallites was deposited at the substrate of loot. However, highly c-axis oriented ZnO thin films were deposited on the glass substrates above 200℃. TEM analysis revealed that an epitaxial (002) ZnO thin film was deposited on c-plane sapphire substrate at the substrate temperature of 350℃, and More patterns showing partial dislocation were observed at the grain boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.143-143
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• 2010

In this study, we demonstrate that ZnO deposited onto $SiO_2$ substrates by magnetron sputtering produces p-type ZnO at higher $O_2$ pressure and n-type ZnO at lower $O_2$ pressure. We also report the effect of hydrogen peroxide ($H_2O_2$) on the stability of undoped ZnO thin films. The films were immersed in 30% $H_2O_2$ for 1 min at $30^{\circ}C$ and annealed in $O_2$at $450^{\circ}C$. The carrier concentration, mobility. and conductivity were measured by a Hall effect measurement system. The Hall measurement results for ZnO films untreated with $H_2O_2$ but annealed in $O_2$ indicate that oxygen fraction greater than ~0.5 produces undoped p-type ZnO films, whereas oxygen fraction less than ~0.5 produces undoped n-type ZnO films. This is attributed to the fact that the oxygen vacancies ($V_o$) decrease and the oxygen interstitials ($O_i$) or zinc vacancies ($V_{Zn}$) increase with increasing oxygen atoms incorporated into ZnO films during deposition and $O_2$ post-annealing.

• Journal of Microbiology and Biotechnology
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• v.28 no.6
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• pp.957-967
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• 2018

A novel $g-C_3N_4$/ZnO/stellerite (CNZOS) hybrid photocatalyst, which was synthesized by coupled hydro thermal-thermal polymerization processing, was applied as an efficient visible-light-driven photocatalyst against Staphylococcus aureus. The optimum synthesized hybrid photocatalyst showed a sandwich structure morphology with layered $g-C_3N_4$ (doping amount: 40 wt%) deposited onto micron-sized ZnO/stellerite particles (ZnO average diameter: ~18 nm). It had a narrowing band gap (2.48 eV) and enlarged specific surface area ($23.05m^2/g$). The semiconductor heterojunction effect from ZnO to $g-C_3N_4$ leads to intensive absorption of the visible region and rapid separation of the photogenerated electron-hole pairs. In this study, CNZOS showed better photocatalytic disinfection efficiency than $g-C_3N_4/ZnO$ powders. The disinfection mechanism was systematically investigated by scavenger-quenching methods, indicating the important role of $H_2O_2$ in both systems. Furthermore, $h^+$ was demonstrated as another important radical in oxidative inactivation of the CNZOS system. In respect of the great disinfection efficiency and practicability, the CNZOS heterojunction photocatalyst may offer many disinfection applications.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.387-392
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• 2017

A high-performing all-transparent photodetector was created by configuring a $MoO_x$/NiO/ZnO/ITO structure on a glass substrate. The ITO bottom layer was applied as a back contact. To achieve the transparent p/n junction, p-type NiO was coated on the n-type ZnO layer. Reactive sputtering was used to spontaneously form the ZnO or NiO layer. In order to improve the transparent photodetector performance, the functional $MoO_x$ window layer was used. Optically, the $MoO_x$ window provided a refractive index layer (n=1.39) lower than that of NiO (n=2), increasing the absorption of the incident light wavelengths (${\lambda}s$). Moreover, the $MoO_x$ window can provide a lower sheet resistance to improve the carrier collection for the photoresponses. The $MoO_x$/NiO/ZnO/ITO device showed significantly better photoresponses of 877.05 (at ${\lambda}$=460nm), 87.30 (${\lambda}$=520 nm), and 30.38 (${\lambda}$=620 nm), compared to 197.28 (${\lambda}$=460 nm), 51.74 (${\lambda}$=520 nm) and 25.30 (${\lambda}$=620 nm) of the NiO/ZnO/ITO device. We demonstrated the high-performing transparent photodetector by using the multifunctional $MoO_x$ window layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.48-52
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• 2003

Low melting crystalline solder glasses for CRT sealing were prepared from the composition of PbO 73.0~75.5 wt%, ZnO 12~15 wt%, $B_2O_3$ 7.0~9.0 wt%, BaO 1.5~3.5 wt%, $P_2O_5$ 1.0~2.5 wt%, $Bi_2O_3$ 0.5~20 wt%. The nucleation and crystallization of the crystalline solder glasses were studied by DTA, SEM and XRD. $2PbO{\cdot}ZnO{\cdot}B_2O_3$ crystalline phase was formed from glass matrix by heat-treatment of glass frits Crystalline solder glasses developed from this paper have good firing condition of $430{\sim}440^{\circ}C$ for 10min and good physical properties