• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.60-61
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• 2007

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.159-165
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• 1999

Structural, magnetic and magnetoresistance behavior of NiFe/Ag multilayers prepared by a magnetron sputter under an Ar and $Ar/H_2$ atmosphere was studied. It was difficult to make a uniform multilayer by using an Ar atmosphere. However, the uniform multilayers could be fabricated by using an $Ar/H_2$ atmosphere. This was thought to be due to decrease in the energy of the sputtered atom and Ar content of the film. Typical magnetoresistance behavior of the discontinuous NiFe/Ag multilayers appeared when the uniform multilayer was formed and annealed. Substrate temperature did not improve the uniformity of the multilayers. Above 20$0^{\circ}C$ of the substrate temperature, the films were almost formed into granular alloys rather than multilayers.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.189-189
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• 2016

In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.21-25
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• 2007

Multilayer transparent electromagnetic wave shielding film with 1 m wide, was fabricated by using roll to roll DC plasma coating with ITO and Ag layer on PET substrate. By optimizing properly the design parameters, such as a processing condition, the surface resistance and the thickness of each layers, the homogeneous film could be obtained. Electromagnetic wave shielding film showed the high shielding effectiveness of 23dB(99.5%) in 2-18 GHz range and the transmittance of 83.1% in 400-700nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.776-781
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• 2017

In this study, we investigated the effect of electrode pattern design on the thermal shock resistance and temperature uniformity of a ceramic heater. A cordierite substrate with a low thermal expansion coefficient was fabricated by tape casting, and a tungsten electrode was printed and used as a heating element. The temperature distribution of the ceramic heater was calculated by a finite-element method (FEM) by considering various electrode patterns, and the tensile stress distribution due to the thermal stress was calculated. In the electrode pattern with a single-line width, the central part of the ceramic heater was heated to the maximum temperature, and the position of the ceramic heater having a double-line width was changed to the maximum temperature, depending on the position of the minimum line width pattern. The highest tensile stress was found along the edges of the ceramic heater. The temperature gradient at the edge determined the tensile stress intensity. The smallest tensile stress was observed for electrode pattern D, which was expected to be advantageous in resisting thermal shock failures in ceramic heaters.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.96-100
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• 1990

The cordierite ($2MgO,2Al_{2}O_{3},5SiO_{2}$) is of great interest for packaging substrates of multilayer IC. The Cu layer was fabricated on the cordierite substrate by the screen printing method and the adhesion properties of the interfaces at the different cosintering conditions were studied. When cosinted in the $Ar+H_{2}O$atmosphere good adhesion was obtained and the heating was found out to be an important factor for the adhesion.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.176.2-176.2
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• 2014

In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.41-41
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• 1998

Rare earth metal films have been used as a buffer layer for growing ferroelectric t thin film or a seed layer for magnetic multilayer. But when it was deposited on s semiconductor substrates for the application of magneto-optic (MO) storage media, it i is difficult to exactly measure magnetic cons떠nts due to shunting current, and so it n needs to grow metal films on insulator substrate to reduce such effect. Recently, it w was reported that ultra-thin Pt layer were epitaxially grown on A12O:J by ion beam s sputtering in 비떠 high vacuum and it can be used as a seed layer for the growth of C Co-contained magnetic multilayer. In this stu$\phi$, Pt thin film were epi떠xially grown on AI2D3 ($\alpha$)OJ) by RF magnetron s sputtering. The crystalline structure was analyzed by transmission electron microscope ( (TEM) and Rutherford Back Scattering (RBS)/Ion Channeling. In TEM study, Pt was b believed to be twinned on AI잉3($\alpha$)01) su$\pi$ace about Pt(ll1) plane.Moreover, RBS c channeling spectra showed that minimum scattering yield of Pt(111)/AI2O:J(1$\alpha$)OJ) was 4 4% and Pt(11J)/AI2D3($\alpha$)OJ) had 3-fold symmetry.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.5
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• pp.245-248
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Ni/ITO (INI) multilayer films were deposited on the glass substrates with a reactive magnetron sputtering system without intentional substrate heating and then the influence of the Ni interlayer on the methanol gas sensitivity of ITO and INI film sensors were investigated. Although both ITO and INI film sensors have the same thickness of 100 nm, INI sensors have a sandwich structure of ITO 50 nm/Ni 5 nm/ITO 45 nm. The changes in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm were measured. It is observed that the INI film sensors show the higher sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the INI film sensor have the potential to be used as improved methanol gas sensors.