• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.243-243
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• 2010

This paper two different etching, HF : HNO3 :DI and RIE were used for etching in multi-crystalline Silicon(Mc-Si) solar cell fabrication. The wafers etched in RIE texture showed low reflectance compared to the wafers etched in Acid soultion after SiNx deposition. In light current-voltage results, the cells etched in RIE texture exhibited higher short circuit current and open circuit voltage than those of the cells etched in acid solution. We have obtained 15.1% conversion efficiency in large area($156cm^2$) Multi-Si solar cells etched in RIE texture.

• Journal of the Semiconductor & Display Technology
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• v.8 no.1
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• pp.13-17
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• 2009

In PRAM applications, the devices can be made for both binary and multi-state storage. The ability to attain intermediate stages comes either from the fact that some chalcogenide materials can exist in configurations that range from completely amorphous to completely crystalline or from designing device structure such a way that mimics multiple phase chase phenomena in single cell. We have designed stack-structured phase change memory cell which operates as multi-state storage. Amorphous $Ge_xTe_{100-x}$ chalcogenide materials were stacked and a diffusion barrier was chosen for each stack layers. The device is operated by crystallizing each chalcogenide material as sequential manner from the bottom layer to the top layer. The amplitude of current pulse and the duration of pulse width was fixed and number of pulses were controlled to change overall resistance of the phase change memory cell. To optimize operational performance the thickness of each chalcogenide was controlled based on simulation results.

• Journal of Integrative Natural Science
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• v.4 no.3
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• pp.192-196
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• 2011

New method to encode multiple photonic features of Bragg type reflector on silicon wafer has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.399-405
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• 2020

Hollow copper oxide/multi-walled carbon nanotubes (CuO/MWCNT) composites were fabricated via an optimized infiltration-reduction-oxidation method, which is more facile and easy to control. The crystalline structure and morphology were characterized by X-ray diffraction (XRD), and transmission electron microscopy (TEM). The as-prepared CuO/MWCNT composites deliver an initial capacity of 612.3 mAh·g^-1 and with 80% capacity retention (488.2 mAh·g^-1) after 100 cycles at a current rate of 0.2 A·g^-1. The enhanced electrochemical performance is ascribed to the better electrical conductivity of MWCNT, the hollow structure of CuO particles, and the flexible structure of the CuO/MWCNT composites.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.189.1-189.1
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• 2013

Titanium dioxide (TiO2) is a wide bandgap semiconductor possessing photochemical stability and thus widely used for photocatalysis. However, enhancing photocatalytic efficiency is still a challenging issue. In general, the efficiency is affected by physio-chemical properties such as crystalline phase, crystallinity, exposed crystal facets, crystallite size, porosity, and surface/bulk defects. Here we propose an alternative approach to enhance the efficiency by studying interfaces between thin TiO2 layers to be stacked; that is, the interfacial phenomena influencing on the formation of porous structures, controlling crystallite sizes and crystallinity. To do so, multi-layered TiO2 thin films were fabricated by using a sol-gel method. Specifically, a single TiO2 thin layer with a thickness range of 20~40 nm was deposited on a silicon wafer and annealed at $600^{\circ}C$. The processing step was repeated up to 6 times. The resulting structures were characterized by conventional electron microscopes, and followed by carrying out photocatalytic performances. The multi-layered TiO2 thin films with enhancing photocatalytic efficiency can be readily applied for bio- and gas sensing devices.

• Journal of Integrative Natural Science
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• v.5 no.1
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• pp.27-31
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• 2012

Relationship between reflection resonance and applied current density in Bragg photonic crystal has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.167-171
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• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.195-199
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• 2008

Production of the silicon feedstock for the semiconductor industry cannot meet the requirement for the solar cell industry because the production volume is too small and production cost is too high. This situation stimulates the solar cell industry to try the lower grade silicon feedstock like UMG (Upgraded Metallurgical Grade) silicon of 5$\sim$6 N in purity. However, this material contains around 1 ppma of dopant atoms like boron or phosphorous. Calculation of the composition profile of these impurities using segregation coefficient during crystal growth makes us expect the change of the type from p to n : boron rich area in the early solidified part and phosphorous rich area in the later solidified part of the silicon ingot. It was expected that the change of the growth speed during the silicon crystal growth is effective in controlling the amount of the metal impurities but not effective in reducing the amount of dopants.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.667-673
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• 2009

The electrocatalytic characteristics of oxygen reduction reaction of the $PtxM_{(1-x)}$ (M = Co, Cu, Ni) supported on multi-walled carbon nanotubes (MWNTs) have been evaluated in a Polymer Electrolyte Membrane Fuel Cell (PEMFC). The $Pt_xM_{(1-x)}$/MWNTs catalysts with a Pt : M atomic ratio of about 3 : 1 were synthesized and applied to the cathode of PEMFC. The crystalline structure and morphology images of the $Pt_xM_{(1-x)}$ particles were characterized by X-ray diffraction and transmission electron microscopy, respectively. The results showed that the crystalline structure of the Pt alloy particles in Pt/MWNTs and $Pt_xM_{(1-x)}$/MWNTs catalysts are seen as FCC, and synthesized $Pt_xM_{(1-x)}$ crystals have lattice parameters smaller than the pure Pt crystal. According to the electrochemical surface area (ESA) calculated with cyclic voltammetry analysis, $Pt_{0.77}Co_{0.23}$/MWNTs catalyst has higher ESA than the other catalysts. The evaluation of a unit cell test using Pt/MWNTs or $Pt_xM_{(1-x)}$/MWNTs as the cathode catalysts demonstrated higher cell performance than did a commercial Pt/C catalyst. Among the MWNTs-supported Pt and $Pt_xM_{(1-x)}$ (M = Co, Cu, Ni) catalysts, the $Pt_{0.77}Co_{0.23}$/MWNTs shows the highest performance with the cathode catalyst of PEMFC because they had the largest ESA.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.49-55
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• 2018

Recently solar cell industry needs the optimal design of Czochralski process for low cost high quality silicon mono crystalline ingot. Because market needs both high efficient solar cell and similar cost with multi-crystalline Si ingot. For cost reduction in Czochralski process, first of all energy reduction should be completed because Czochralski process is high energy consumption process. For this purpose we studied optimal water-cooling tube design and simultaneously we also check the quality of ingot with Von mises stress and V(pull speed of ingot)/G(temperature gradient to the crystallization) values. At this research we used $CG-Sim^{(R)}$ S/W package and finally we got improved water-cooling tube design than normally used process in present industry. The optimal water-cooling tube length should be 200mm. The result will be adopted at real industry.