• Journal of Advanced Marine Engineering and Technology
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• 제36권1호
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• pp.157-165
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• 2012

본 연구에서는 MMIC 상에서 온칩용 수동소자의 개발을 위해서, 주기적으로 배치된 용량성 소자를 이용한 단파장 전송선로를 연구하였다. PACD 구조의 전송선로는 기존의 마이크로스트립 전송선로에 비해, 단파장 특성과 낮은 특성 임피던스를 나타내었다. PACD 구조의 전송선로 구조는 기존의 마이크로스트립 전송선로 파장의 8%의 파장 단축효과를 나타낸다. MMIC 상에서의 온칩용 수동소자로서의 적합성을 판단하기 위하여 이론적으로 PACD 선로구조의 손실특성, 유효유전율, 전파상수, 대역폭 등의 기본 특성을 분석하였다. 위의 결과들을 통하여 PACD 구조의 전송선로는 MMIC 상에서 온칩용 수동소자로서의 특성에 효과적임을 알 수 있다.

• ETRI Journal
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• 제32권1호
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• pp.151-153
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• 2010

A highly efficient linear and compactly integrated series-type Doherty power amplifier (PA) has been developed for wideband code-division multiple access handset applications. To overcome the size limit of a typical Doherty amplifier, all circuit elements, such as matching circuits and impedance transformers, are fully integrated into a single monolithic microwave integrated circuit (MMIC). The implemented PA shows a very low idle current of 25 mA and an excellent power-added efficiency of 25.1% at an output power of 19 dBm by using an extended Doherty concept. Accordingly, its average current consumption was reduced by 51% and 41% in urban and suburban environments, respectively, when compared with a class-AB PA. By adding a simple predistorter to the PA, the PA showed an adjacent channel leakage ratio better than -42 dBc over the whole output power range.

• 전자통신동향분석
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• 제37권5호
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Journal of information and communication convergence engineering
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• 제15권2호
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• pp.112-116
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• 2017

In this work, we demonstrated a low noise and high linearity low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with novel active bias circuit for LTE applications. The device technology used in this work relies on a process involving a $0.25-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT). The LNA MMIC with a novel active bias circuit has a small signal gain of $19.7{\pm}1.5dB$ and output third order intercept point (OIP3) of 38-39 dBm in the frequency range 1.75-2.65 GHz. The noise figure (NF) is less than 0.58 dB over the full bandwidth. Compared with the characteristics of the LNA MMIC without using the novel active bias circuit, the OIP3 is improved about 2-3 dBm. The small signal gain and NF showed no significant change after using the active bias circuit. The novel active bias circuit indeed improves the linearity performance of the LNA MMIC without degradation.

• ETRI Journal
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• 제36권3호
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• pp.498-501
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• 2014

A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.142-145
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• 2015

In this work, open stubs were fabricated on a polyether sulfone (PES) substrate, and their basic radio frequency (RF) characteristics were investigated for application to RF matching components of a flexible monolithic microwave integrated circuit (MMIC). According to the results, an open stub employing coplanar waveguide (OSCPW) on PES exhibited much lower loss than that on silicon substrate. The OSCPW with a length of $500{\mu}m$ on PES showed capacitance values of 0.031 ~ 0.044 pF from 0.5 to 50 GHz. For application to a relatively high-value capacitive matching, an open stub employing a fishbone-type transmission line (OSFTTL) was fabricated on PES, and its characteristics were investigated. The OSFTTL showed much higher capacitance values than the OSCPW due to the high effective permittivity value. Specifically, the OSFTTL on PES showed capacitance values of 0.066 ~ 0.24 pF from 0.5 to 50 GHz, which are higher than those for the open stub on silicon substrate. The above results indicate that the OSCPW and OSFTTL on PES can be effectively used for application to low/high-value capacitive matching components on microwave and millimeter wave flexible MMIC. To the best of the authors' knowledge, this work is the first report of the investigation of RF capacitive matching components on PES substrate.

• 마이크로전자및패키징학회지
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• 제9권2호
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• pp.33-38
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• 2002

패키지는 전기적인 특성에 있어서 적은 삽입손실과 반사손실 특성이 요구된다. 따라서 이러한 고주파 전송 특성이 우수한 패키지를 설계하기 위하여 본 논문에서는 LTCC (Low Temperature Cofired Ceramic) 기술을 이용한 세라믹 패키지를 설계하였고, 유한요소법(FEM: Finite Element Method)을 이용하여 DC~30 GHz에서 해석하였다. 해석 결과, 설계된 패키지 급전구조는 30 GHz까지 삽입손실과 반사손실이 각각 0.32 dB, 16.8 dB 이내의 양호한 특성을 얻었다. 따라서 본 논문에서 설계된 세라믹 패키지는 MMIC (Monolithic Microwave Integrated Circuit) 모듈 개발에 효과적으로 활용될 수 있으리라 기대된다.

• 한국전자통신학회논문지
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• 제9권10호
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• pp.1175-1180
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• 2014

본 논문에서는 발진기의 위상잡음을 개선하고 MMIC(Monolithic Microwave Integrated Circuit)에 적용 가능하도록 설계된 분리된 링형 DGS(Defected Ground Structure)공진기를 제안한다. 이것은 평면형 공진기로서 소형화 설계가 용이하고 상대적으로 높은 Q 값을 갖는다. 공진기를 이용하여 초고주파 발진기를 설계할 때 공진기의 등가 파라미터를 모델링하는 것이 필요하다. 본 논문에서는 발진기의 설계에 필요한 공진기의 등가회로 파라미터를 공진기의 측정된 특성 값으로부터 수식적으로 계산하는 방법을 나타내었다. 방법을 검증하기 위해 공진주파수가 5.8 GHz인 링형 DGS 공진기를 제작하여 특성을 측정하고 등가 파라미터를 계산하였고, 이 결과를 ADS 도구를 이용하여 시뮬레이션한 결과와 비교하여 일치함을 보였다.

• ETRI Journal
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• 제36권1호
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• pp.106-115
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• 2014

In this work, the coplanar waveguide is fabricated on a PES (poly[ether sulfone]) substrate for application to a flexible monolithic microwave integrated circuit, and its RF characteristics were thoroughly investigated. The quality factor of the coplanar waveguide on PES is 40.3 at a resonance frequency of 46.7 GHz. A fishbone-type transmission line (FTTL) structure is also fabricated on the PES substrate, and its RF characteristics are investigated. The wavelength of the FTTL on PES is 5.11 mm at 20 GHz, which is 55% of the conventional coplanar waveguide on PES. Using the FTTL, an impedance transformer is fabricated on PES. The size of the impedance transformer is $0.318mm{\times}0.318mm$, which is 69.2% of the size of the transformer fabricated by the conventional coplanar waveguide on PES. The impedance transformer showed return loss values better than -12.9 dB from 5 GHz to 50 GHz and an insertion loss better than -1.13 dB in the same frequency range.

• 대한전자공학회논문지SD
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• 제44권12호
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• pp.7-11
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• 2007

본 논문에서는 MMIC 응용을 위한 dielectric-supported air-gapped microstrip line (DAML) 구조를 이용하여 dual-mode stepped impedance 링 공진기를 설계 제작하였다. 링 공진기는 표면 마이크로머시닝 기술을 이용하여 만들어졌다. DAML ring resonator는 다층구조로써 공기중에 위치한 신호선과 MMIC 응용에 적합하도록 CPW가 한 평면에 구성되 있으며 DAML-CPW 트랜지션이 자유로운게 특징이다. DAML 링 공진기는 $10{\mu}m$ 높이로 GaAs 기판 으로부터 띄어져 있다. 대역통과 여파기는 dual-mode 공진을 하며 stepped impedance 이용한 구조이다. 측정결과로 중심주파수 97 GHz에선 감쇠특성은 15 dB, 삽입손실은 2.65 dB를 보였으며, 상대 대역폭은 12 %를 나타냈다. 이같은 구조의 대역통과 여파기는 MMIC 와의 직접화에 유리하다.