• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.154-154
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• 2000

FED(Field emission display)의 FEAs(Field emitter arrays)에 형성되어 있는 micro-tip 은 tip 표면의 오염이나 진공내부의 잔류가스에 대단히 민감하다. 특히, emitter 물질의 일함수 및 겉모양 같은 기하학적 요소에 민감한 전계방출 소자의 특성상 tip 선단이 oxidation 될 경우 일함수가 증가하여 전자방출에 필요한 구동전압이 증가하고 전자 방출의 불균일성이 커지는 문제점이 발생한다. 이에 고진공의 동작 환경 및 FEAs 제작과정이나 공기의 노출에 발생하는 tip 표면의 오염물질 제거가 요구된다. 따라서 본 연구에서는 40$\times$40mm2 FEAs에 laser power, scan speed을 달리하며 laser(cw Nd-YAG, 1064nm)을 조사하였다. laser cleaning 효과를 보기 위해 laser irradiation 전, 후에 진공도 5$\times$10-7torr irradiation 후에 emitter tip의 뚜렷한 기하학적 모양의 변화를 볼 수는 없었지만, I-V 특성이 향상 되는 것을 볼 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.65-71
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• 1996

A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

• Journal of Information Display
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• v.2 no.3
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• pp.72-77
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• 2001

Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

• The korean journal of orthodontics
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• v.49 no.6
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• pp.349-359
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• 2019

Objective: The aim of this study was to analyze three-dimensional (3D) changes in maxillary dentition in Class II malocclusion treatment using arch wire with continuous tip-back bends or compensating curve, together with intermaxillary elastics by superimposing 3D virtual models. Methods: The subjects were 20 patients (2 men and 18 women; mean age 20 years 7 months ${\pm}$ 3 years 9 months) with Class II malocclusion treated using $0.016{\times}0.022-inch$ multiloop edgewise arch wire with continuous tip-back bends or titanium molybdenum alloy ideal arch wire with compensating curve, together with intermaxillary elastics. Linear and angular measurements were performed to investigate maxillary teeth displacement by superimposing pre- and post-treatment 3D virtual models using Rapidform 2006 and analyzing the results using paired t-tests. Results: There were posterior displacement of maxillary teeth (p < 0.01) with distal crown tipping of canine, second premolar and first molar (p < 0.05), expansion of maxillary arch (p < 0.05) with buccoversion of second premolar and first molar (p < 0.01), and distal-in rotation of first molar (p < 0.01). Reduced angular difference between anterior and posterior occlusal planes (p < 0.001), with extrusion of anterior teeth (p < 0.05) and intrusion of second premolar and first molar (p < 0.001) was observed. Conclusions: Class II treatment using an arch wire with continuous tip-back bends or a compensating curve, together with intermaxillary elastics, could retract and expand maxillary dentition, and reduce occlusal curvature. These results will help clinicians in understanding the mechanism of this Class II treatment.

• Journal of Information Display
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• v.1 no.1
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• pp.63-69
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• 2000

In order to improve both the level and the stability of electron emission, Mo and Co silicides were formed from Mo mono-layer and Ti/Co bi-layers on single crystal silicon field emitter arrays (FEAs), respectively. Using the slope of Fowler-Nordheim curve and tip radius measured from scanning electron microscopy (SEM), the effective work function of Mo and Co silicide FEAs were calculated to be 3.13 eV and 2.56 eV, respectively. Compared with silicon field emitters, Mo and Co silicide exhibited 10 and 34 times higher maximum emission current, 10 V and 46 V higher device failure voltage, and 6.1 and 4.8 times lower current fluctuation, respectively. Moreover, the emission currents of the silicide FEAs depending on vacuum level were almost the same in the range of $10^{-9}{\sim}10^{-6}$ torr. This result shows that silicide is robust in terms of anode current degradation due to the absorption of air molecules.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.141-142
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• 2000

In order to improve electron field emission and its stability, tip surface of amorphous silicon field emitters have been coated with molybdenum layer with a thickness of 25 nm through the gate opening and annealed rapidly in inert ambient. Compared with amorphous silicon field emitters, Mo silicidized amorphous silicon field emitters exhibited lower turn on voltage about 9 V, 3.8 times higher maximum current, 3.1 times lower fluctuation range and less change of the emission current depending on the vacuum level.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.4
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• pp.2430-2435
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• 2015

In order to achieve high flexibility in manufacture, analysis of chip's shape is one of the most important problems. This paper describes the change of machining characteristics in workpiece materials depending on turning clearance angle. The experiments start from choosing three workpiece materials that are SM45C(machine structural carbon steel), STS303(stainless steel), SCM415 (chrome-molybdenum steel). Then, the experiments show specifically how features of selected materials changed when they were processed with diverse machining depths and with feed rate starting from fixed rotational speed. Especially, the experiments were also analyzed in chip's shape and wear of insert tip. In conclusion, these experiments show that chip's shape was changed by quality of the materials, depth of cut, and conveying speed. When machining feedrate and machining depth were 0.10mm/rev and 0.3mm respectively, workpiece materials showed the best shapes, not categorizing quality of the materials and machining characteristics.