• Journal of KIBIM
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• v.5 no.1
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• pp.1-7
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• 2015

Modular technology has become a major issue of the construction industries to enhance their productivity. Modular bridge construction generally requires the data exchange between the contractors, designers, fabricators and constructors. Therefore, a readily accessible information model interface module based on BIM technology is essential for their communication during a project life-cycle. In this study, BIM based information model interface module for a modular pier was developed. For the information models, the PBS(Product Breakdown Structure) and LOD(Level of Development) were defined. Next, all components of a modular pier were conducted by the parametric modeling technique, and then 3D cell library interface was developed. An nterface module was also developed using VBA(Visua basic Application) for exchanging a data from 3D model library to other softwares such as Microstation, AutoCad and Excel and was connected with MS Access database. The developed information model interface module would improve the design quality of the modular pier and reduce the time and cost for design. Updated 3D information models could be utilized for the fabrication, assembly, and construction process for modular piers.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39C no.3
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• pp.234-238
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• 2014

Multichip packaging was achieved the best solution to significantly reduce thermal resistance at the same time, to increase luminance intensity in LEDs packaging application. For the packaging, thermal spreading resistance is an important parameter to get influence the total thermal performance of LEDs. In this study, silicon-based multichip light emitting diodes (LEDs) packaged module has been examined for thermal characteristics in several parameters. Compared to the general conventional single LED packaged chip module, multichip LED packaged module has many advantages of low cost, low density, small size, and low thermal resistance. This analyzed module is comprised of multichip LED array, which consists of 32 LED packaged chips with supplement power of 0.2 W at every single chip. To realize the extent of thermal distribution, the computer-aided design model of 6.4 W Si-based multichip LED module was designed and was performed by the simulation basis of actual fabrication flow. The impact of thermal distribution is analyzed in alternative ways both optimizing numbers of fins and the thickness of that heatsink. In addition, a thermal resistance model was designed and derived from analytical theory. The optimum simulation results satisfies the expectations of the design goal and the measurement of IR camera results. tart after striking space key 2 times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.464-464
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• 2007

환경오염으로 인한 각종 질병 및 증후군 등의 발생으로 가정용 산업용에서 환경관련 기술들이 다양한 분야로 확대되고 있다. 본 연구에서는 양이온 및 음이온 양쪽이온을 최대한 발생시키며, 오존 발생량은 억제하고 소비전력을 절감하고자 Ag-Pd 전극을 적용한 세라믹스 클러스터를 개발하였다. Ag-Pd 전극과 매칭되는 세라믹스 조성을 개발한 후 적층공정 기술을 이용하여 후막형 클러스터를 제조하였다. 전극 패턴모양, 전극간 방전간격 및 전극 보호층의 두께에 따른 음이온 발생량을 측정하여 최적화를 위한 실험을 진행하였으며, 음이온 발생량 100만개이상, 오존발생량 0.6ppb인 특성을 확인하였다.

• Current Photovoltaic Research
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• v.11 no.3
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• pp.75-78
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• 2023

Recently, the installation of photovoltaic modules in urban areas has been increasing. In particular, the demand for solar modules installed in a limited space is increasing. However, since the crystalline silicon solar module's size is proportional to the solar cell's size, it is difficult to manufacture a module that can be installed in a limited area. In this study, we fabricated a solar module with a shingled design that can control horizontal and vertical width using a bi-directional laser scribing method. We fabricated a string cell with a width of 1/5 compared to the existing shingled design string cells using a bi-directional laser scribing method, and we fabricated a solar module by connecting three strings in parallel. Finally, we achieved a conversion power of 5.521 W at a 103 mm × 320 mm area.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.172-182
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• 2014

In this paper, is is presented the result of design and fabrication for X band T/R module using in active array radar. The high power RF circuit was fabricated using GaN element, so that high power and high efficiency was fulfilled comparing with the previous T/R module that have under 50 W output power for X band. Designed X band T/R module demonstrated 200 W(53 dBm) peak power, 20 us pulse width with 0.4 dB pulse droop and 20 % duty cycle. And it has characteristics of 26 dB receive gain and 4.5 dB noise figure. The structure was applied to prevent serious damage of receive path and GaN HPA by transmitting power during trasmit time of a pulse radar.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.182-187
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• 2018

In this study, 20.8% of a p-type Si bifacial solar cell was used to develop a photovoltaic (PV) module to obtain the maximum power under a limited installation area. The transparent back sheet material was replaced during fabrication with a white one, which is opaque in commercial products. This is very beneficial for the generation of more electricity, owing to the additional power generation via absorption of light from the rear side. A new model is suggested herein to predict the power of the bifacial PV module by considering the backside reflections from the roof and/or environment. This model considers not only the frontside reflection, but also the nonuniformity of the backside light sources. Theoretical predictions were compared to experimental data to prove the validity of this model, the error range for which ranged from 0.32% to 8.49%. Especially, under $700W/m^2$, the error rate was as low as 2.25%. This work could provide theoretical and experimental bases for application to a distributed and microgrid network.

• ETRI Journal
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• v.31 no.6
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• pp.749-754
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• 2009

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.6
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• pp.1071-1079
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• 2010

This paper describes the design and fabrication of a high-efficiency GaN HEMT(Gallium Nitride High-electron Mobility Transistor) Pallet power amplifier module for S-band phased array radar applications. Pallet amplifier module has a series 2-cascaded power amplifier and the final amplification-stage consists of balanced GaN HEMT transistor. In order to achieve high efficiency characteristic of pallet power amplifier module, all amplifiers are designed to the switching-mode amplifier. We performed with various PRF(Pulse Repetition Frequency) of 1, 10, 100 and 1000Hz at a fixed pulse width of $100{\mu}s$. In the experimental results, the output power, gain, and drain efficiency(${\eta}_{total}$) of the Pallet power amplifier module are 300W, 33dB, and 51% at saturated output power of 2.9GHz, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.39-43
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• 2009

In order to develop piezoelectric inverter module for CCFL driving, Rosen-type multilayer piezoelectric transformer was fabricated. The output power and efficiency of mutilayer piezoelectric transformer according to the variation inner electrode layer were investigated. Mutilayer piezoelectric transformer was fabricated conventional mutilayer ceramic method using PZT base ceramics. Also, piezoelectric inverter module was adopted driving circuit with half-bridge type. The piezoelectric inverter module was set up with input voltage 12.5 V, switching frequency 104.3 KHz. The results showed the value of step-up ratio 100, efficiency 87% at load resistance of $100k{\Omega}$.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.216-217
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• 2007

In this study, we analyzed the electrical loss characteristics between ribbon and output terminal of constituent material according to electrical resistance during interconnection process of PV module. From this result, the electrical output power reduction rate caused by interaction between ribbon and cell's interconnection was 2.88%. There was 1W electrical output power reduction through the 16 solar cells. So it is expected that the wider size of PV module gives the higher loss in electricity production. Also, the average output power of PV module passed lamination process was increased by 0.081W per one solar cell and the increase rate was 3.7%.PV module's electrical loss before and after lamination process according to constituent material's terminal was 0.49W and 0.50W, respectively.