• Current Photovoltaic Research
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• v.10 no.4
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• pp.107-110
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• 2022

Lightweight and flexible photovoltaic (PV) modules are attractive for building-integrated photovoltaic (BIPV) applications because of their easy construction and applicability. In this study, we fabricated lightweight and flexible c-Si PV modules using ethylene tetrafluoroethylene (ETFE) front cover and shingled design string cells. The ETFE front cover instead of glass made the PV modules lighter in weight, and the shingled design string cells increased the flexibility. Finally, we fabricated a PV module with a conversion power of 240.08 W at an area of 1.25 m² and weighed only 2 kg/m². Moreover, to check the PV module's flexibility, we conducted a bending test. The difference of conversion power between the modules before and after bending shown was only 1.7 W, which showed a power reduction rate of about 0.7%.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.22-29
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• 2011

An infrared thermographic imaging module of [$320{\times}256$] focal-plane array (FPA) based on [InAs/GaSb] strained-layer superlattice (SLS) was fabricated, and its images were demonstrated. The p-i-n device consisted of an active layer (i) of 300-period [13/7]-ML [InAs/GaSb]-SLS and a pair of p/n-electrodes of (60/115)-period [InAs:(Be/Si)/GaSb]-SLS. FTIR photoresponse spectra taken from a test device revealed that the peak wavelength (${\lambda}_p$) and the cutoff wavelength (${\lambda}_{co}$) were approximately $3.1/2.7{\mu}m$ and $3.8{\mu}m$, respectively, and it was confirmed that the device was operated up to a temperature of 180 K. The $30/24-{\mu}m$ design rule was applied to single pixel pitch/mesa, and a standard photolithography was introduced for [$320{\times}256$]-FPA fabrication. An FPA-ROIC thermographic module was accomplished by using a $18/10-{\mu}m$ In-bump/UBM process and a flip-chip bonding technique, and the thermographic image was demonstrated by utilizing a mid-infrared camera and an image processor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.117-122
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• 2010

Recently, aspheric glass lens molding core is fabricated with tungsten carbide(WC). If molding core is fabricated with silicon carbide(SiC), SiC coating process, which must be carried out before the Diamond-Like Carbon(DLC) coating can be eliminated and thus, manufacturing time and cost can be reduced. Diamond Like Carbon(DLC) is being researched in various fields because of its high hardness, high elasticity, high durability, and chemical stability and is used extensively in several industrial fields. Especially, the DLC coating of the molding core surface used in the fabrication of a glass lens is an important technical field, which affects the improvement of the demolding performance between the lens and molding core during the molding process and the molding core lifetime. Because SiC is a material of high hardness and high brittleness, it can crack or chip during grinding. It is, however, widely used in many fields because of its superior mechanical properties. In this paper, the grinding condition for silicon carbide(SiC) was developed under the grinding condition of tungsten carbide. A silicon carbide molding core was fabricated under this grinding condition. The measurement results of the SiC molding core were as follows: PV of 0.155 ${\mu}m$(apheric surface) and 0.094 ${\mu}m$(plane surface), Ra of 5.3 nm(aspheric surface) and 5.5 nm(plane surface).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.61.1-61.1
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• 2015

Nanoscale semiconductor plasma processing has become one of the most challenging issues due to the limits of physicochemical fabrication routes with its inherent complexity. The mission of future and emerging plasma processing for development of next generation semiconductor processing is to achieve the ideal nanostructures without abnormal profiles and damages, such as 3D NAND cell array with ultra-high aspect ratio, cylinder capacitors, shallow trench isolation, and 3D logic devices. In spite of significant contributions of research frontiers, these processes are still unveiled due to their inherent complexity of physicochemical behaviors, and gaps in academic research prevent their predictable simulation. To overcome these issues, a Korean plasma consortium began in 2009 with the principal aim to develop a realistic and ultrafast 3D topography simulator of semiconductor plasma processing coupled with zero-D bulk plasma models. In this work, aspects of this computational tool are introduced. The simulator was composed of a multiple 3D level-set based moving algorithm, zero-D bulk plasma module including pulsed plasma processing, a 3D ballistic transport module, and a surface reaction module. The main rate coefficients in bulk and surface reaction models were extracted by molecular simulations or fitting experimental data from several diagnostic tools in an inductively coupled fluorocarbon plasma system. Furthermore, it is well known that realistic ballistic transport is a simulation bottleneck due to the brute-force computation required. In this work, effective parallel computing using graphics processing units was applied to improve the computational performance drastically, so that computer-aided design of these processes is possible due to drastically reduced computational time. Finally, it is demonstrated that 3D feature profile simulations coupled with bulk plasma models can lead to better understanding of abnormal behaviors, such as necking, bowing, etch stops and twisting during high aspect ratio contact hole etch.

• Korean Journal of Optics and Photonics
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• v.10 no.1
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• pp.73-79
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• 1999

Semiconductor optical switch modules of 1$\times$2, 1$\times$4, and 4$\times$4 types for 1550 nm optical communication systems were fabricated by using laser welding technique, embodying in 30-pin butterfly package. For better coupling efficiency between switch chip and optical fiber, tapered fibers of 10~15mm lens radii were used, which provided up to 60% optical coupling efficiency. With the help of new laser hammering process, we could recover the lost optical power almost completely up to average 82% of initially obtained power. The fabricated optical switch modules showed good thermal stability of less than 5% degradation even after 200 times thermal cycling test. The 2.5 Gbps optical transmission characteristics of the 4$\times$4 switch module showed low sensitivities of less than -30dB for all possible switching paths. The transmission penalties of 1$\times$2 switch module at $10^{-10}$ BER were 0.6dB and 0.7dB for 50Xm and 90 Km optical fibers, respectively.

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.41-45
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• 2011

Hybrid fault current limiters (FCL) have been researched at Yonsei University. The hybrid FCL has advantages such as having a rapid response to a sudden fault situation and a fast recovery time from a quench. It consists of an asymmetric HTS coil, a switching module, and a bypass reactor. The asymmetric HTS coil is wound with two different types of HTS wires in an opposite direction so that it has nearly zero inductance at the superconducting state. When the quench occurs at the fault state, a strong magnetic field is generated from the asymmetric coil because of different quench characteristics of two HTS wires, and then a repulsive force is induced in the switching module. The force opens the switch and the fault current is pushed into the bypass reactor. In this research, we analyzed the cause of the repulsive force and confirmed, experimentally and computationally, that the magnitude of a repulsive force is varied by changing the gap distance between the asymmetric coil and the switching module. By using the FEM simulation, we calculated the repulsive force with respect to the gap distance and verified that the effect of the gap distance. Then, short circuit test was carried out to confirm the correct operation of the fast switch.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.41-49
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• 2008

Thermoelectric properties of the n-type Bi-Te and the p-type Bi-Sb-Te films were measured and the growth behaviors of the electrodeposited Bi-Te and Bi-Sb-Te nanowires were characterized. Filling ratios of 81% and 77% were obtained for electrodeposition of the Bi-Te and the Bi-Sb-Te nanowires, respectively, into the nano pores of 200 nm-diameter of an alumina template. A thermoelectric module, composed of the Bi-Te nanowires and the Bi-Sb-Te nanowires was processed by electrodeposition, and a resistance value of $15{\Omega}$ was measured between the Ni electrodes formed on the Bi-Te nanowires and the Bi-Sb-Te nanowires of the module.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.237-240
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• 2016

The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was $350{\times}90mm^2$ and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was $750{\times}750{\mu}m^2$ were used with contact pads of $260{\times}669{\mu}m^2$ size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of $66^{\circ}C$, whereas irradiation was measured to be $300mW/cm^2$. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.

• Journal of the Optical Society of Korea
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• v.19 no.5
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• pp.508-513
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• 2015

A capacitive-type touch screen panel (TSP) composed of silver nanowire (AgNW) crossing electrodes and transparent bridge structures was fabricated on a polycarbonate film. The transparent bridge structure was formed with a stack of Al-doped ZnO (AZO) electrodes and SU-8 insulator. The stable and robust continuity of the bridge electrode over the bridge insulator was achieved by making the side-wall slope of the bridge insulator low and depositing the conformal AZO film with atomic layer deposition. With an extended exposure time of photolithography, the lower part of the SU-8 layer around the region uncovered by the photomask can be exposed enough to the UV light scattered from the substrate. This leads to the low side-wall slope of the bridge insulator. The fabricated TSP sample showed a large capacitance change of 22.71% between with and without touching. Our work supplies the technological clue for ensuring long-term reliability to the highly flexible and transparent TSP made by using conventional fabrication processes.