• 제목/요약/키워드: modulation gain

검색결과 381건 처리시간 0.022초

Amplitude Modulation Response and Linearity Improvement of Directly Modulated Lasers Using Ultra-Strong Injection-Locked Gain-Lever Distributed Bragg Reflector Lasers

  • Sung, Hyuk-Kee;Wu, Ming C
    • Journal of the Optical Society of Korea
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    • 제12권4호
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    • pp.303-308
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    • 2008
  • Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

이득과 분산을 조절한 광섬유의 변조 불안정성 분석 (Modulation Instability in Dispersion and Gain Managed Fibers)

  • 최병훈;김상인
    • 한국광학회지
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    • 제18권2호
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    • pp.93-99
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    • 2007
  • 본 논문에서는 주기적으로 분산 값의 부호가 바뀌는(dispersion managed: DM) 선로에서 급작스런 분산 변화로 인한 scattering을 완화시키도록 이득을 공간적으로 변조(gain management: GM)하는 시스템을 제안하고 이에 대한 modulation instability(MI) 변화에 대한 이론적인 분석과 수치해석적인 분석을 보고한다. 연구결과 어떤 경우에도 GM을 가한 시스템이 DM만을 한 시스템 보다 MI 이득의 크기와 cutoff frequency, side band peak모두가 작아짐을 확인하였다. 동일한 광신호 세기에 대해서 MI 이득이 작아지는 것은 four wave mixing 등 광섬유의 비선형 현상을 완화시킴으로써 파장분할다중화 전송의 품질 향상에 도움이 될 뿐 아니라, 솔리톤(soliton)을 이용한 전송에 있어서 하나의 펄스에 더 많은 에너지를 갖게 함으로써 신호대 잡음비를 개선할 수 있음을 의미한다. 본 논문에서는 분산과 이득이 동시에 조절된 선로의 효과를 솔리톤 전송 시스템의 개선된 특성을 편광모드분산(polarization mode dispersion: PMD)가 존재하는 선로에서의 펄스 폭 증가를 통하여 살펴본다.

반도체 레이저의 변조특성에서 비선형 이득에 관한 연구 (Analysis of nonlinear gain in modulation characteristics of semiconductor lasers)

  • 엄진섭;김창봉
    • 전자공학회논문지D
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    • 제35D권2호
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    • pp.93-100
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    • 1998
  • In this paper we analyze the effect of nonlinear gain on laser modulation characteristics applying a small-signal analysis to the rate equation which includes a nonlinear gain term. Also we analyze the resonance frequency and the damping factor which determine laser modulation characteristics, define K factor which is the proportionality factor between resonance frequency and damping factor, and conclude that the decrease in K factor is due to increases in differential gain and no correlation between K factor and nonlinear gain is identified.

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섭동이론을 이용한 반도체 레이저에서의 매개증폭 해석 (Analysis of parametric amplification in a semiconductor laser using perturbation theory)

  • 조성대;이창희;신상영
    • 한국광학회지
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    • 제11권3호
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    • pp.187-192
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    • 2000
  • 반도체 레이저의 비션형 특성에 의하여 발생하는 매개증폭에 대하여, 반도체 레이저 다이오드의 비율방정식을 섭동 이론을 이용하여 해석하고 그 결과에 대하여 논의하였다. 매개증폭에 의하여 발생하는 이득은 펌프 변조전류가 증가하여 이득된 공진주파수에 가까워질수록 증가하였으며, 바이어스 전류와 반도체 레이저의 감쇄상수가 증가할수록 감소하였다. 또한 큰 매개이득을 얻기 위해서는 펌프 변조전류와 신호 변조전류 사이의 위상을 정합시켜야 하며, 큰 신호 변조전류에서는 증포된 광 출력의 포화로 인하여 매개이득이 감소하였다.

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광 무선통신을 위한 SIM-SM 변조 (Subcarrier Intensity Modulation-Spatial Modulation for Optical Wireless Communications)

  • 정암;황승훈
    • 한국통신학회논문지
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    • 제38A권12호
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    • pp.1086-1093
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    • 2013
  • In this paper, we propose a novel modulation that combines the spatial modulation (SM) with the subcarrier intensity-modulation (SIM) for optical wireless communications. The performance of SIM-SM scheme is compared to a conventional SIM by computer simulation. For the spectral efficiency (SE) of 2bits/s/Hz, the performance gain about 2dB is achieved. As the SE increases to 3bit or 4bits/s/Hz, the Eb/N0 gain becomes about 5dB. It is shown the attenuation for the SIM is more serious than the SIM-SM according to increasing the number of the subcarriers.

Development of Femtosecond Stimulated Raman Spectroscopy: Stimulated Raman Gain via Elimination of Cross Phase Modulation

  • Jin, Seung-Min;Lee, Young-Jong;Yu, Jong-Wan;Kim, Seong-Keun
    • Bulletin of the Korean Chemical Society
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    • 제25권12호
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    • pp.1829-1832
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    • 2004
  • We have developed a new femtosecond probe technique by using stimulated Raman spectroscopy. The cross phase modulation in femtosecond time scale associated with off-resonant interaction was shown to be eliminated by integrating the transient gain/loss signal over the time delay between the Raman pump pulse and the continuum pulse. The stimulated Raman gain of neat cyclohexane was obtained to demonstrate the feasibility of the technique. Spectral and temporal widths of stimulated Raman spectra were controlled by using a narrow band pass filter. Femtosecond stimulated Raman spectroscopy was proposed as a highly useful probe in time-resolved vibrational spectroscopy.

전압 이득과 변조지수 제어에 의한 3상 Z-소스 인버터의 출력 교류 전압 제어 (Output AC Voltage Control of a Three-Phase Z-Source Inverter by the Voltage Gain and Modulation Index Control)

  • 김세진;정영국;임영철;양승학
    • 전기학회논문지
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    • 제59권11호
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    • pp.1996-2005
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    • 2010
  • This paper proposes a new method for constant control of the output AC voltage of a voltage-fed three phase Z-source inverter (ZSI), in case of Z-network DC voltage variation or heavy change of load. The modulation index for the reference output AC voltage of ZSI can be calculated by the basic definition of ZSI, the input DC voltage and capacitor voltage of Z-network. And, the output AC voltage of ZSI is controlled by the modified space vector modulation (SVM) with the calculated modulation index. By the proposed method, the modulation index of output AC voltage is closely following in the reference modulation index. The validity of the proposed method is verified using PSIM simulation. In case which the input DC voltage of ZSI is heavily changed from 100[V] to 70[V] (or to 150[V]) and in case which load is changed from $30[\Omega]$ to $10[\Omega]$, we confirmed that the output AC voltage of ZSI is constantly controlled by the proposed method because the modulation index of ZSI is also simultaneously changed. Finally, FFT and %THD of the output voltage and current of ZSI by the proposed method are analyzed.

Passivation Ledge를 이용한 SiGe HBT의 Current Gain Modulation (A SiGe HBT of Current Gain Modulation By using Passivation Ledge)

  • 유병성;조희엽;구용서;안철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.771-774
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    • 2003
  • Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ>0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

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Z-Source 인버터 (Z-Source Inverter)

  • 최형래;정태욱;전장건;우도;이동헌;강필순;최준호;박성준
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2006년도 전력전자학술대회 논문집
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    • pp.545-548
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    • 2006
  • This paper presents control method of a Z-source inverter and their relationships of voltage boost versus modulation index. A maximum boost control is presented to produce the maximum voltage boost(or voltage gain)under a given modulation index. The control method, relationships of voltage gain versus modulation index, and voltage stress versus voltage gain are analyzed in detail and verified by experiment.

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Analysis on Bit Error Rate Performance of Negatively Asymmetric Binary Pulse Amplitude Modulation Non-Orthogonal Multiple Access in 5G Mobile Networks

  • Chung, Kyuhyuk
    • International Journal of Advanced Culture Technology
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    • 제9권4호
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    • pp.307-314
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    • 2021
  • Recently, positively asymmetric binary pulse amplitude modulation (2PAM) has been proposed to improve the bit error rate (BER) performance of the weak channel gain user, with a tolerable BER loss of the strong channel gain user, for non-orthogonal multiple access (NOMA). However, the BER loss of the stronger channel gain user is inevitable in such positively asymmetric 2PAM NOMA scheme. Thus, we propose the negatively asymmetric 2PAM NOMA scheme. First, we derive closed-form expressions for the BERs of the negatively asymmetric 2PAM NOMA. Then, simulations demonstrate that for the stronger channel gain user, the BER of the proposed negatively asymmetric 2PAM NOMA improves, compared to that of the conventional positively asymmetric 2PAM NOMA. Moreover, we also show that for the weaker channel gain user, the BER of the proposed negatively asymmetric 2PAM NOMA is comparable to that of the conventional positively asymmetric 2PAM NOMA, over the power allocation range less than about 10 %.