• Title/Summary/Keyword: modulation gain

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Amplitude Modulation Response and Linearity Improvement of Directly Modulated Lasers Using Ultra-Strong Injection-Locked Gain-Lever Distributed Bragg Reflector Lasers

  • Sung, Hyuk-Kee;Wu, Ming C
    • Journal of the Optical Society of Korea
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    • v.12 no.4
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    • pp.303-308
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    • 2008
  • Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

Modulation Instability in Dispersion and Gain Managed Fibers (이득과 분산을 조절한 광섬유의 변조 불안정성 분석)

  • Choi, Byung-Hoon;Kim, Sang-In
    • Korean Journal of Optics and Photonics
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    • v.18 no.2
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    • pp.93-99
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    • 2007
  • We investigated analytically and numerically the occurrence of modulation instability in fibers with periodic changes both in dispersion and gain. Previously, it has been known that the modulation instability is suppressed in dispersion managed solitons where dispersion is managed in such a way that the local dispersion alternates between the normal and the anomalous regimes. In this work, we enhanced the advantage of the dispersion management scheme by additionally introducing proper gain/loss profiles in fibers. The gain/loss profile is given by $\Gamma(z)=0.5/D(z)*(dD/dz)$, where D(z) represents the dispersion profile. The fundamental gain spectra of the modulation instability in the dispersion and gain managed fibers have been derived analytically and confirmed by numerical calculation. Our investigation reveals that in the dispersion and gain fibers the modulation instabilities are always much more suppressed compared to the case with only dispersion managed. In practical dispersion management schemes, dispersion profiles show discontinuity. and thus. the corresponding gain/loss profiles tend to be finite. In these cases, the gain/loss profiles were approximated by lumped gains/losses of finite values. Our numerical calculations confirm that this approximation also works well.

Analysis of nonlinear gain in modulation characteristics of semiconductor lasers (반도체 레이저의 변조특성에서 비선형 이득에 관한 연구)

  • 엄진섭;김창봉
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.2
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    • pp.93-100
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    • 1998
  • In this paper we analyze the effect of nonlinear gain on laser modulation characteristics applying a small-signal analysis to the rate equation which includes a nonlinear gain term. Also we analyze the resonance frequency and the damping factor which determine laser modulation characteristics, define K factor which is the proportionality factor between resonance frequency and damping factor, and conclude that the decrease in K factor is due to increases in differential gain and no correlation between K factor and nonlinear gain is identified.

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Analysis of parametric amplification in a semiconductor laser using perturbation theory (섭동이론을 이용한 반도체 레이저에서의 매개증폭 해석)

  • 조성대;이창희;신상영
    • Korean Journal of Optics and Photonics
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    • v.11 no.3
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    • pp.187-192
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    • 2000
  • We analyze the parametric amplification by the nonlinear characteristics in a semiconductor laser using a perturbation theory and discuss its result. The parametric gain increases with increase of the pump modulation current. It is due to shift of the resonance frequency as the pump modulation current increases. However, it decreases with increase of the bias current and damping constant. Also, it needs phase matching between the pump modulation current and signal modulation current to maximize the parametric gain. The gain decreases for a large signal modulation current due to the saturation of the amplified power. power.

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Subcarrier Intensity Modulation-Spatial Modulation for Optical Wireless Communications (광 무선통신을 위한 SIM-SM 변조)

  • Cheng, Yan;Hwang, Seung-Hoon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38A no.12
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    • pp.1086-1093
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    • 2013
  • In this paper, we propose a novel modulation that combines the spatial modulation (SM) with the subcarrier intensity-modulation (SIM) for optical wireless communications. The performance of SIM-SM scheme is compared to a conventional SIM by computer simulation. For the spectral efficiency (SE) of 2bits/s/Hz, the performance gain about 2dB is achieved. As the SE increases to 3bit or 4bits/s/Hz, the Eb/N0 gain becomes about 5dB. It is shown the attenuation for the SIM is more serious than the SIM-SM according to increasing the number of the subcarriers.

Development of Femtosecond Stimulated Raman Spectroscopy: Stimulated Raman Gain via Elimination of Cross Phase Modulation

  • Jin, Seung-Min;Lee, Young-Jong;Yu, Jong-Wan;Kim, Seong-Keun
    • Bulletin of the Korean Chemical Society
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    • v.25 no.12
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    • pp.1829-1832
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    • 2004
  • We have developed a new femtosecond probe technique by using stimulated Raman spectroscopy. The cross phase modulation in femtosecond time scale associated with off-resonant interaction was shown to be eliminated by integrating the transient gain/loss signal over the time delay between the Raman pump pulse and the continuum pulse. The stimulated Raman gain of neat cyclohexane was obtained to demonstrate the feasibility of the technique. Spectral and temporal widths of stimulated Raman spectra were controlled by using a narrow band pass filter. Femtosecond stimulated Raman spectroscopy was proposed as a highly useful probe in time-resolved vibrational spectroscopy.

Output AC Voltage Control of a Three-Phase Z-Source Inverter by the Voltage Gain and Modulation Index Control (전압 이득과 변조지수 제어에 의한 3상 Z-소스 인버터의 출력 교류 전압 제어)

  • Kim, Se-Jin;Jung, Young-Gook;Lim, Young-Cheol;Yang, Seung-Hak
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.11
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    • pp.1996-2005
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    • 2010
  • This paper proposes a new method for constant control of the output AC voltage of a voltage-fed three phase Z-source inverter (ZSI), in case of Z-network DC voltage variation or heavy change of load. The modulation index for the reference output AC voltage of ZSI can be calculated by the basic definition of ZSI, the input DC voltage and capacitor voltage of Z-network. And, the output AC voltage of ZSI is controlled by the modified space vector modulation (SVM) with the calculated modulation index. By the proposed method, the modulation index of output AC voltage is closely following in the reference modulation index. The validity of the proposed method is verified using PSIM simulation. In case which the input DC voltage of ZSI is heavily changed from 100[V] to 70[V] (or to 150[V]) and in case which load is changed from $30[\Omega]$ to $10[\Omega]$, we confirmed that the output AC voltage of ZSI is constantly controlled by the proposed method because the modulation index of ZSI is also simultaneously changed. Finally, FFT and %THD of the output voltage and current of ZSI by the proposed method are analyzed.

A SiGe HBT of Current Gain Modulation By using Passivation Ledge (Passivation Ledge를 이용한 SiGe HBT의 Current Gain Modulation)

  • You, Byoung-Sung;Cho, Hee-Yup;Ku, Youn-Seo;Ahn, Chul
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.771-774
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    • 2003
  • Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ>0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

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Z-Source Inverter (Z-Source 인버터)

  • Choi H.L.;Jung T.U.;Jeon J.G.;Yu Tao;Lee D.H.;Kang P. S.;Choi J.H.;Park S.J.
    • Proceedings of the KIPE Conference
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    • 2006.06a
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    • pp.545-548
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    • 2006
  • This paper presents control method of a Z-source inverter and their relationships of voltage boost versus modulation index. A maximum boost control is presented to produce the maximum voltage boost(or voltage gain)under a given modulation index. The control method, relationships of voltage gain versus modulation index, and voltage stress versus voltage gain are analyzed in detail and verified by experiment.

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Analysis on Bit Error Rate Performance of Negatively Asymmetric Binary Pulse Amplitude Modulation Non-Orthogonal Multiple Access in 5G Mobile Networks

  • Chung, Kyuhyuk
    • International Journal of Advanced Culture Technology
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    • v.9 no.4
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    • pp.307-314
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    • 2021
  • Recently, positively asymmetric binary pulse amplitude modulation (2PAM) has been proposed to improve the bit error rate (BER) performance of the weak channel gain user, with a tolerable BER loss of the strong channel gain user, for non-orthogonal multiple access (NOMA). However, the BER loss of the stronger channel gain user is inevitable in such positively asymmetric 2PAM NOMA scheme. Thus, we propose the negatively asymmetric 2PAM NOMA scheme. First, we derive closed-form expressions for the BERs of the negatively asymmetric 2PAM NOMA. Then, simulations demonstrate that for the stronger channel gain user, the BER of the proposed negatively asymmetric 2PAM NOMA improves, compared to that of the conventional positively asymmetric 2PAM NOMA. Moreover, we also show that for the weaker channel gain user, the BER of the proposed negatively asymmetric 2PAM NOMA is comparable to that of the conventional positively asymmetric 2PAM NOMA, over the power allocation range less than about 10 %.