• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.9-12
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• 2005

Characteristics of ZnO films grown on $Si-SiO_2$ substrates at temperatures of $200\sim400^{\circ}C$ by metalorganic chemical vapor deposition were investigated. The growth rates and mobilities of ZnO films were dependent on growth temperatures. The field-effect mobilities measured in thin-film transistor structure were $15cm^2/Vsec$.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.581-588
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• 1997

The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.2
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• pp.242-247
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• 1987

Electrophysical phenomena at the silicon semiconductor-electrolyte solution interfaces were analyzed based on the zeta potential of the electrical double layer and microelectrophoresis. The suspensions were composed of the p or n-type silicon particles suspended in the KCI or pH buffer solutions. The approximate diameter of the prepared and sampled sioicon semiconductor pardticles was 1.5\ulcorner. The sign of the zeta poetntials of the p and n-type silicon particles in the KCl and pH buffer solution was positive. A range of electrophoretic mobilities of the p and n-type silicons in the KCl solutions was 5.5-8.9x10**-4 cm\ulcornerV-sec and 4.2-7.9x10**-4cm\ulcornerV-sec, respectively. The range of zeta potentials corresponding to the electrophoretic mobilities is 70.4-114.0mV nad 53.9-101.2mV, respectively. On the other hand, a range of electrophoretic mobilities of the p and n-type silicons in the pH buffer solutions was 1.1x10**-4-2.2x10**-3cm\ulcornerV-sec and 0-2.1x10**-3cm\ulcornerV-sec, respectively. The range of zeta potentials corresponding to the electrophoretic mobilities is 14.1-281.6mV and 0-268.8mV, respectively. The zeta potentials and electrical double layers of the doped silicon semiconductors are decisively influenced by the positively charged ions in the solutions. The maximum values of the zeta potentials in the KCl solutions appeared at a concentration of about 10-\ulcorner. The isoelectric point of the n-type silicon semiconductors appeared at about a pH 7. The effect of the space charge of the doped silicon semiconductors can be neglected compare with the effect of the surface charge.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.75-80
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• 2012

$InSb$ films were fabricated by DC magnetron sputtering and the effects of deposition temperature, heat treatment, passivation from evaporation and multi-layered structure were investigated. Electron mobility and electron concentration were linearly increased with deposition temperature for as-deposited specimens. It was found that the mobilities depend on the grain size rather than the stoichiometry for the samples with very low mobilities. The mobilities largely increased for the specimens with evaporation passivation compared with those without passivation layer. The mobility also increased with the amount of indium deposition in the multi-layer structured $InSb$ films. It was found that the mobility increments in both cases are due to the matching of the stoichiometry in $InSb$ films. For the heat treated and passivated specimens, the mobilities increased with annealing time and the maximum mobility was measured as 1612 $cm^2$/Vs.

• Archives of Pharmacal Research
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• v.28 no.7
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• pp.839-847
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• 2005

The aim of this study was to provide the basis to further examine the mode of action of ethanol. Fluorescent probes reported to have different membrane mobilities were used to evaluate the effect of dimyristoylphosphatidylethanol (DMPEt) on the lateral and rotational mobilities of liposome lipid bilayers. An experimental procedure, based on the selective quenching of 1,6-diphenyl-1,3,5-hexatriene (DPH) and 1,3-di(1-pyrenyl)propane (Py-3-Py) by trinitrophenyl groups, was used. DMPEt increased the bulk lateral and rotational mobilities, and had a greater fluidizing effect on the outer than the inner monolayer. These effects of DMPEt on liposomes may be responsible for some, but not all, of the general anesthetic actions of ethanol.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.795-802
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• 2012

Geminate electron-hole recombination in organic solids in the presence of a donor-acceptor heterojunction is studied by computer simulations. We analyze how the charge-pair separation probability in such systems is affected by energetic disorder of the media, anisotropy of charge-carrier mobilities, and other factors. We show that in energetically disordered systems the effect of heterojunction on the charge-pair separation probability is stronger than that in idealized systems without disorder. We also show that a mismatch between electron and hole mobilities reduces the separation probability, although in energetically disordered systems this effect is weaker compared to the case of no energetic disorder. We demonstrate that the most important factor that determines the charge-pair separation probability is the ratio of the sum of electron and hole mobilities to the rate constant of recombination reaction. We also consider systems with mobility anisotropy and calculate the electric field dependence of the charge-pair separation probability for all possible orientations of high-mobility axes in the donor and acceptor phases. We theoretically show that it is possible to increase the charge-pair separation probability by controlling the mobility anisotropy in heterojunction systems and in consequence to achieve higher efficiencies of organic photovoltaic devices.

• BMB Reports
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• v.30 no.6
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• pp.426-430
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• 1997

The helical periodicity of the triple-stranded $(dT)_n{\cdot}(dA)_n{\cdot}(dT)_n$ sequence was determined by measuring gel-mobilities of bent DNA fragments containing the sequence. In the bent DNA fragments, a $GA_{22}G$ $CT_{22}C$ sequence was located between two bent DNA loci composed of six $A_{6}{\cdot}T_{6}$ repeats. and the DNA length between the bent DNA loci was varied by 1 base pair over a full helical turn. The gel mobility of each bent DNA fragment reflected the overall extent of DNA bending and varied with the DNA length between the two bent loci. Mobilities of the bent DNA fragments in 5% polyacrylamide gel were measured after preincubating the DNA fragments both in the presence and absence of $CT_{22}C$ oligonucleotide. By comparing the bent DNA fragments containing an intermolecular triplex structure with those of a genuine duplex structure in the gel mobilities, the helical periodicity of the $T_n{\cdot}A_n{\cdot}T_n$ triplex DNA was determined to be $11.5({\pm}0.3)bp/turn$.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1907-1909
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• 1999

In this paper, we report a high quality GaN films with high hole concentrations and low resistivities without post growth treatment using a GAIVBE system equipped with a home-made inductively coupled RF plasma source. The room temperature hole concentrations obtained were $5{\times}10^{17}{\sim}1.6{\times}10^{19}cm^{-3}$, and the mobilities were $2.5{\sim}8cm^2/Vs$. Also we have grown high quality n-type GaN films with the range of electron concentrations of $1.4{\times}10^{17}{\sim}4.7{\times}10^{19}cm^{-3}$ and the mobilities of $180{\sim}410cm^2/Vs$.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.148-152
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• 1999

the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.04a
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• pp.102-107
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• 2013

It is important to understand the vibrating behavior of plate structures for many engineering applications. In this study, vibration characteristics of strip plates which have finite width and infinite length are investigated theoretically and numerically. The waveguide finite element approach is used in this study which is known as an effect tool for waveguide structures. WFE method requires only cross-sectional FE model and uses theoretical harmonic solutions for the wave propagation along the longitudinal direction. First of all for a simple strip plate, WFE results are compared with theoretical ones such as the dispersion diagrams, point mobilities, etc. to validate the numerical model. Then in the numerical analysis, the several different types of longitudinal stiffeners are included to the plate model to investigate the effects of the stiffeners in terms of the dispersion curves and mobilities.