• 제목/요약/키워드: mobilities

검색결과 210건 처리시간 0.031초

淸肌散의 效能에 關한 實驗的 硏究 (An Experimental Studies on the Effects of Chunggisan)

  • 김혜정;채병윤
    • 한방안이비인후피부과학회지
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    • 제3권1호
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    • pp.25-40
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    • 1990
  • Chunggisan has been widely used in treatment of urticaria which is based on. Oriental Medical literatures. These studies were attempted experimental effects of chunggisan on the analgesia, sedation, antipyretic, anti-inflammatory and isolated illeum of the experimental animals. The result of the studies were as follows: 1. The inhibitory effect was recognized on the Analgesic study by the Acetic acid Method in mice. 2. The spontaneous momentum of mice was restricted and the duration of Hypnosis induced by pentobarbital-sodium in mice was prolonged. 3. Anti-inflammatory effect was recognized significantly on the rat hind paws edema induced by dextran. 4. The inhibitory effect of leukocyte emigration was recognized by the CMC airpouch method of rats. 5. The inhibitory effect was noted on capillary permeability induced by histamin in mice. 6. Spontaneous mobilities in isolated ileum of mice were significantly suppressed, and contraction by acetylcholine, barium chloride and histamine were inhibited. According to the above results, it is expected that chunggisan can be widely used in treatment of urticaria.

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InP 기판위에 저온 분자선 에피탁시로 성장된 In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As 다중 양자 우물의 특성 평가 (Material properties of In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As MQWs grown on InP substrates by low-temperature molecular beam epitaxy)

  • 이종수;최우영
    • 전자공학회논문지D
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    • 제35D권5호
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    • pp.80-86
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    • 1998
  • Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

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Disc 전기영동법에 의한 수종 담수어 혈장 단백질의 분획 (Fractionation of Plasma Protein on the Several Fresh Water Fishes by Disc Electrophoresis)

  • 홍사욱;박성배
    • 약학회지
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    • 제22권1호
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    • pp.42-50
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    • 1978
  • The plasma proteins of fresh water fishes have been fractionated by disc electrophoresis in acrylamide gels utilized as an electrophoretic supporting medium. The species of fishes examined in this experiment were Anguilla japonica, Misgurnus mizolepis, Parasilurus asotus, Siniperca scherzeri, Pelteobagrus fulvidra, Carassius carassius, Cyprinus carpio, and Hemibarbus labeo, obtained in the Han River. Disc electrophoresis was performed as described by Ornstein and Davis. Gels and buffer solution were prepared by the method developed by W.J.Kim. The separation gels were 7% acrylamide gel. The fractionation of plasma proteins showed 13 bands in Anguilla japonica, 10 in Misgurnus mizolepis, 15 in Parasilurus asotus, 12 in Siniperca scherzeri, 11 in Pelteobagrus fulvidra, 13 in Carassius carassius, 9 in Cyprinus carpio, and 13 in Hemibarbus labeo. The patterns of plasma protein on the each species of fishes were different in the number of bands, ratio of contents, relative mobilities, and forms of fractionation.

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Multicomponent wide band gap oxide semiconductors for thin film transistors

  • Fortunato, E.;Barquinha, P.;Pereira, L.;Goncalves, G.;Martins, R.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.605-608
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    • 2006
  • The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

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Device characteristics of blue phosphorescent organic light-emitting diodes depending on the electron transport materials

  • Lee, Hyun-Koo;Ahn, Hyuk;Lee, Chang-Hee
    • Journal of Information Display
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    • 제12권4호
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    • pp.219-222
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    • 2011
  • Iridium-(III)-bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^2$' ]picolinate-based blue phosphorescent organic light-emitting diodes with different electron transport materials were fabricated. Each electron transport material had different electron mobilities and triplet energies. The device with 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene had the highest external quantum efficiency (20.1%) and luminous current efficiency (33.1 cd/A) due to its high electron mobility and triplet energy. The operational stability of each device was also compared with that of the others. The device with 2,2',2"(1,3,5-benzenetriyl)tris-(1-phenyl-1H-benzimidazole) was found to have a longer lifetime than the other devices.

변형 힘을 받는 p형 $Si_{1-x}Ge_x$의 이동도 연구 (Study of the Mobility for Strained p-type $Si_{1-x}Ge_x$ Alloys)

  • 전상국
    • 한국전기전자재료학회논문지
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    • 제11권3호
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    • pp.181-187
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    • 1998
  • The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.

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분산된 p형 및 n형 반도체 입자의 도핑 효과와 반도체 동작 (Doping Effects and Semiconductor Behaviors of the Dispersed p- and n- type Semiconductor Particles)

  • 천장호;손광철;라극환;조은철
    • 전자공학회논문지A
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    • 제31A권5호
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    • pp.126-133
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    • 1994
  • Doping effects and semiconductor behaviors of the dispersed p- and n-Si, p- and n- GaAs particles in the aqueous electrolyte have been studied using microelectrophoretic, voltammetric and chronoamperometric techniques. The cations (K$^{+}$) are adsorbed on both the p- and n- Si particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are negatively charged acceptor states. On the other hand, the anions (CI$^{-}$) are adsorbed on both the p- and n- GaAs particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are positively charged donor states. Under the same conditions, electrophoretic mobilities, electrochemical processes, doping effects and related semiconductor behaviors of the Si and the GaAs particles are similar regardless of the doping profiles, i. e. dopants and doping concentrations. The doping effects and related semiconductor behaviors of the dispersed p- and n- type semiconductor particles are gradually lost with decreasing dimensions.

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Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates

  • Oh, Jae-Eung;Kim, Mun-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권3호
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    • pp.131-135
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    • 2006
  • High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000 $cm^2/V-s$ and 20,000 $cm^2/v-s$ can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.

Molecular Dynamics Simulation Study of the Ionic Mobility of OH- Using the OSS2 Model

  • 이송희
    • Bulletin of the Korean Chemical Society
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    • 제27권8호
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    • pp.1154-1158
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    • 2006
  • Anomalously high ionic mobilities of H+ and $OH^-$ are owing to the transfer of $H^+$ by the Grotthus chain mechanism. Molecular dynamics simulations for the system of 215 water including $OH^-$ ion at 298.15 K using the OSS2 model [J. Chem. Phys. 109, 5547 (1998)] as a dissociable water model with the use of Ewald summation were carried out in order to study the dynamics of $OH^-$ in water. The calculated ionic mobility of $OH^-$ is in good agreement with the experimental result and the Grotthus chain mechanism is fully understood.

인삼 단백질분획에 대한 폴리아크릴아미드 전기영동 (Polyacrylamide Gel Electrophoresis on Ginseng Proteins)

  • 김춘미;황정주
    • 약학회지
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    • 제30권6호
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    • pp.343-347
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    • 1986
  • Korean ginseng was purified to obtain radioprotective protein fractions by buffer extraction, ammonium sulfate fractionation, CM-cellulose column chromatography, heat inactivation and Sephadex G-75 column chromatography. The final three fractions, GI, GII and GIII were subjected to Disc-polyacrylamide gel electrophoresis (PAGE) and SDS-PAGE. The molecular weights(M.W.) of native and denatured proteins were estimated by using regression line equations obtained from the mobilities of standard proteins. As the results, in Disc-PAGE, the GI fraction showed two protein bands with M.W. of above 213, 000 and 55, 000, GII showed one band with M.W. of 44, 000 and GIII, also one band with M.W. of 19, 000. In SDS-PAGE, GI fraction gave four subunit bands with M.W. of above 114, 000, 27, 000, 24, 000 and 19, 000, GII gave two bands with M.W. of 46, 000 and 22, 000, and GIII, one band of 19, 000.

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