Material properties of In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As MQWs grown on InP substrates by low-temperature molecular beam epitaxy

InP 기판위에 저온 분자선 에피탁시로 성장된 In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As 다중 양자 우물의 특성 평가

Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.