• Resources Recycling
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• v.26 no.1
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• pp.16-21
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• 2017

This paper relates to the synthesis of a source powder for SiC crystal growth. ${\beta}-SiC$ powders are synthesized at high temperatures (>$1400^{\circ}C$) by a reaction between silicon powder and carbon powder. The reaction is carried out in a graphite crucible operating in a vacuum ambient (or Ar gas) over a period of time sufficient to cause the Si+C mixture to react and form poly-crystalline SiC powder. End-product characterizations are pursued with X-ray diffraction analysis, SEM/EDS, particle size analyzer and ICP-OES. The purity of the end-product was analyzed with the Korean Standard KS L 1612.

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.106-111
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• 2005

Ternary Ti-B-C coatings were synthesized on WC-Co and Si wafers substrates by a PECVD technique using a gaseous mixture of $TiCl_4,\;BCl_3,\;CH_4,\;Ar,\;and\; H_2$. The effects of deposition variables such as substrate temperature, gas ratio, $R_x=[BCl_3/(CH_4+BCl_3)]$ on the microstructure and mechanical properties of Ti-B-C coatings were investigated. From our instrumental analyses, the synthesized Ti-B-C coatings was confirmed to be composites consisting of nanocrystallites TiC, quasi-amorphous TiB2, and amorphous carbon at low boron content, on the contrary, nanocrystallites $TiB_2$, quasi-amorphous TiC, and amorphous carbon at relatively high boron content. The microhardness of the Ti-B-C coatings increased from $\~23 GPa$ of TiC to $\~38 GPa$ of $Ti_{0.33}B_{0.55}C_{0.11}$ coatings with increasing the boron content. The $Ti_{0.33}B_{0.55}C_{0.11}$ coatings showed lower average friction coefficient of 0.45, in addition, it showed relatively better wear behavior compared to other binary coatings of $TiB_2$ and TiC. The microstruture and microhardness value of Ti-B-C coatings were largely depend on the deposition temperature.

• Resources Recycling
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• v.12 no.3
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• pp.25-30
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• 2003

The synthesis of SiC used for the parts of the gas turbine and the heat exchanger, was carried out. In this study, wire cutting slurry of silicon wafer and the graphite rod of spent zinc-carbon battery were applied to the starting materials for the synthesis. The powders of Si or Si+SiC were obtained from the waste material by filtration, gravity separation and magnetic separation. Graphite powder was produced by dismantling, grinding and gravity separation from spent zinc-carbon battery. The synthesis of SiC could be completed from the mixture powders of Si and C or Si+SiC and C at the condition of equivalent ratio of Si and C, atmosphere of Ar or vacuum, temperature of above 1$600^{\circ}C$ and 2 hours reactions. The purity of synthesized Si-C was above 99%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Journal of radiological science and technology
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• v.27 no.2
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• pp.45-50
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• 2004

Synthesis diamond films have been deposited on the molybdenum substrates using an microwave plasma enhanced chemical vapor deposition method. The effects of deposition time, surface morphology, infrared transmittance and Raman scattering have been studied. Diamond deposited on molybdenum substrate for 100 hours by MW plasma CVD from $CH_4-H_2-O_2$ gas mixture had good crystallity with $100[{\mu}m]$ thickness needed for radiation detector. Diamond radiation detector of M-I-M type was made and the current of radiation detector was increased by increasing X-ray dose.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.125-125
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• 2000

백금 스퍼터 증착시 아르곤에 산소와 같은 첨가 가스를 사용할 경우 산화막에 대한 접착력이 좋아지며 백금 박막의 우선배향성을 조절할 수 있음이 알려져 있다. 이러한 첨가 가스는 백금 박막에 상당량 포함되며 스퍼터링 후 열처리 과정에서 탈착되는 것으로 알려져 있다. 후열처리 도중 첨가 가스의 탈착 거동이 백금 박막의 미세구조, 조성 및 전기 전도도 등과 같은 제반 물성에 영향을 미칠 것이라 추정된다. 본 연구에서는 백금의 스퍼터링 시 질소를 첨가하여 질소가 포함된 백금 박막을 증착한 후 질소 탈착 거동을 연구하기 위해 실시간 타원해석기(in situ ellipsometer)를 이용하여 진공열처리(15mTorr)하면서 온도변화에 따른 유효굴절율(n)과 소광계수(k) 값을 구하였다. 또한 산소를 첨가하여 얻은 백금 박막의 결과와 비교하여 백금 박막내에 포함된 산소와 질소의 탈착 거동의 차이를 조사하였다. 산소를 이용하여 우선배향성이 (200)으로 조절된 박막의 경우 n과 k의 급격한 변화가 관찰되었으며 이로부터 55$0^{\circ}C$ 온도에서 산소가 급격히 빠져나감을 추측할 수 있었으며 열처리 후에는 백금 bulk 값에 가까운 값을 가짐을 알 수 있었다. 한편, 질소를 사용하여 (200)으로 우선배향성이 조절된 박막의 경우 n,k 값의 후열처리 도중의 변화 양상은 스퍼터링 압력에 크게 의존하는 것으로 나타났다. 22mTorr에서 스퍼터링한 박막의 경우 23$0^{\circ}C$ 부근에서 굴절률과 미세구조의 변화가 있음을 관찰할 수 있었으나, 10mTorr에서 스퍼터링한 시편의 경우 굴절률의 변화양상은 산소를 상요한 경우와 매우 유사한 거동을 나타내지만 열처리 후에는 상대적으로 낮은 n,k 값을 나타내고 있었다. 또한 열처리 시편의 미세구조 변화에 대한 분석 결과 산소 사용의 경우는 측정온도 범위내에서는 후 열처리 후에도 박막내에 hole이나 hillock 등이 관찰되지 않아 bulk 값에 가까운 n, k 값을 가지지만, 질소 사용의 경우는 hole, 표면 거칠기, 혹은 스퍼터링 중에 인입된 질소의 탈착이 완전히 이루어지지 못해 bulk 값과 다르게 나온 것으로 생각된다.

• KSTLE International Journal
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• v.6 no.2
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• pp.39-44
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• 2005

Friction and wear properties of the Boron carbide ($B_{4}C$) coating 100 nm thickness were studied under various relative humidity (RH). The boron carbide film was deposited on silicon substrate by DC magnetron sputtering method using $B_{4}C$ target with a mixture of Ar and methane ($CH_4$) as precursor gas. Friction tests were performed using a reciprocation type friction tester at ambient environment. Steel balls of 3 mm in diameter were used as counter-specimen. The results indicated that relative humidity strongly affected the tribological properties of boron carbide coating. Friction coefficient decreased from 0.42 to 0.09 as the relative humidity increased from $5\%$ to $85\%$. Confocal microscopy was used to observe worn surfaces of the coating and wear scars on steel balls after the tests. It showed that both the coating surface and the ball were significantly worn-out even though boron carbide is much harder than the steel. Moreover, at low humidity ($5\%$) the boron carbide showed poor wear resistance which resulted in the complete removal of coating layer, whereas at the medium and high humidity conditions, it was not. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analyses were performed to characterize the chemical composition of the worn surfaces. We suggest that tribochemical reactions occurred during sliding in moisture air to form boric acid on the worn surface of the coating. The boric acid and the tribochemcal layer that formed on steel ball resulted in low friction and wear of boron carbide coating.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.94-103
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• 1998

We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%, $2100^{\circ}C$ and $980^{\circ}C$ respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.531-538
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• 2012

Hollow silica spheres were prepared by spray drying of precursor solution of colloidal silica. The precursor solution is composed of 10-20 nm colloidal silica dispersed in a water or ethanol-water mixture solvent with additives of tris hydroxymethyl aminomethane. The effect of pH and concentrations of the precursor and additives on the formation of hollow sphere particles was studied. The spray drying process parameters of the precursor feeding rate, inlet temperature, and gas flow rate are controlled to produce the hollow spherical silica. The mixed solvent of ethanol and water was preferred because it improved the hollowness of the spheres better than plain water did. It was possible to obtain hollow silica from high concentration of 14.3 wt% silica precursor with pH 3. The thermal conductivity and total solar reflectivity of the hollow silica sample was measured and compared with those values of other commercial insulating fillers of glass beads and $TiO_2$ for applications of insulating paint, in which the glass beads are representative of the low thermal conductive fillers and the $TiO_2$ is representative of infrared reflective fillers. The thermal conductivity of hollow silica was comparable to that of the glass beads and the total solar reflectivity was higher than that of $TiO_2$.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.