• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.34-35
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• 2006

The development of Micro MIM as a new manufacturing process for metallic micro parts made of advanced functional materials has been the subject of considerable research over the last years. This paper addresses important quality aspects on processing of new materials by Micro-MIM. Three examples of new functional materials that can be processed are reviewed in this paper. The first example is two-component-Micro-MIM to obtain multi-functional devices. A micro positioning encoder consisting of a magnetic / non-magnetic material combination is presented. The second issue is series production of the replicate of the smallest human bone in the ear (stapes) from Titanium as an example of medical application. Quality assurance and reproducibility in terms of injection moulding parameters are addressed. In the third part, first results on the processing of the shape memory alloy NiTi by Micro-MIM are presented. Potential applications include biocompatible devices and transportation, for example automotive and aerospace. Processing routes and initial microstructures obtained are discussed.

• 대한소아치과학회지
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• 제44권3호
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• pp.370-377
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• 2017

Molar-incisor malformation (MIM)은 최근에 알려진 치아 이상으로 제1대구치의 치근 형태 이상이 특징적이며, 제2유구치의 비정형적 치근 형태 및 중절치의 법랑질 결함을 동반하기도 한다. 본 연구는 MIM으로 진단한 3명의 환아에 대하여 보고하고, 이에 관한 문헌 고찰을 하고자 한다. 3명의 환아 모두 제1대구치의 치근 형태 이상을 보였으며, 그 정도는 다양했다. 2명의 환아는 출생 시 의학적 병력을 가지고 있었으며, 한 명의 환아는 일란성 쌍둥이였다. 그러나 쌍둥이 동생의 임상 및 방사선학적 검사 결과 특별한 이상이 없는 정상 치열이었다. 본 연구는 최근에 보고되고 있는 MIM 증례에 관한 기술 및 방사선학적 관찰로, 해당 환아의 임상적 관리 시 이환 치아의 방사선학적 특성 및 미세해부학적 구조 및 수반하는 특성에 관한 고려는 조기 진단 및 포괄적 치료계획 수립에 도움이 될 것으로 생각된다.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.1-5
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• 2012

In this paper, matching characteristic of MIM (metal-insulator-metal) capacitor with $Al_2O_3/HfO_2/Al_2O_3$ (AHA) structure is analyzed. The floating gate capacitance measurement technique (FGMT) was used for analysis of matching characteristic of the MIM capacitors in depth. It was shown that matching coefficient of AHA MIM capacitor is 0.331%${\mu}m$ which is appropriate for application to analog/RF integrated circuits. It was also shown that the matching coefficient has a more strong dependence on the width than length of MIM capacitor.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1993년도 추계학술강연 및 발표대회강연 및 발표논문 초록집
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• pp.6-6
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• 1993

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1999년도 춘계학술대회 및 발표대회 강연 및 발표논문 초록집
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• pp.18-18
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• 1999

• 전자공학회논문지
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• 제50권5호
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• pp.61-66
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• 2013

본 논문에서는 절연물체로 $Si_3N_4$를 사용한 MIM 커패시터의 정합특성의 온도에 대한 의존성에 대해 분석하였다. 온도가 올라감에 따라 정합특성이 열화 되는 현상이 나타났다. 즉, $25^{\circ}C$, $75^{\circ}C$ 그리고 $125^{\circ}C$에서 $Si_3N_4$ MIM 커패시터의 정합특성 계수는 각각 0.5870, 0.6151, $0.7861%{\mu}m$으로 측정 되었다. 이러한 현상은 온도가 증가함에 따라 커패시터 내부의 캐리어들의 이동도가 감소하고 전하의 농도가 많아지기 때문이라고 할 수 있다. 따라서 고온에서의 $Si_3N_4$ MIM 커패시터의 정합특성의 분석은 아날로그 집적회로나 SoC (System on Chip)에 아주 중요하고 필수적인 연구라고 할 수 있다.

• Design & Manufacturing
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• 제8권2호
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• pp.37-40
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• 2014

A discharge electrode plays a role of shaving off workpiece with spark generated by current in discharge machining. Accordingly, for the discharge electrode, an electrode with excellent wear resistance is necessary. Generally, Graphite and Cu are used as the materials of the electrode, and recently Cu-W is mainly used as an electrode with excellent wear resistance. However, the form of the electrode generally used is produced mostly using cutting work, so a lot of costs incur if several similar forms are needed. Thus, this study developed a Cu-W electrode using Metal Injection Molding (MIM) process to produce similar forms with excellent productivity and a great quantity of electrodes in a similar form in discharge machining and carried out a discharge machining test. In developing an electrode applying MIM, predicting contraction of a product in a sintering process, a mold expansion ratio of 1.29486 was given, but the actual product showed a percentage of contraction 24% to 32%, which showed a difference of 3% to 5%. In addition, to verify wear resistance of the discharge electrode, abrasion loss was measured after the discharge.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제13권3호
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• pp.1481-1501
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• 2019

In opportunistic network, the behavior of a node is autonomous and has social attributes such as selfishness.If a node wants to forward information to another node, it is bound to be limited by the node's own resources such as cache, power, and energy.Therefore, in the process of communication, some nodes do not help to forward information of other nodes because of their selfish behavior. This will lead to the inability to complete cooperation, greatly reduce the success rate of message transmission, increase network delay, and affect the overall network performance. This article proposes a hybrid incentive mechanism (Mim) based on the Reputation mechanism and the Credit mechanism.The selfishness model, energy model (The energy in the article exists in the form of electricity) and transaction model constitute our Mim mechanism. The Mim classifies the selfishness of nodes and constantly pay attention to changes in node energy, and manage the wealth of both sides of the node by introducing the Central Money Management Center. By calculating the selfishness of the node, the currency trading model is used to differentiate pricing of the node's services. Simulation results show that by using the Mim, the information delivery rate in the network and the fairness of node transactions are improved. At the same time, it also greatly increases the average life of the network.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.105-108
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• 1993

Behavior of electron in polyimide LB films of Al/polyimide LB films/Au (MIM) structures is reported in the present paper. From experimental results, it is known that there is a process where electron moves from Au electrode to Al electrode through LB film. And the electrons are presumed to move by diffusion since the direction is opposite to electric field.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.189-192
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• 2001

A simple metal-insulator-metal (MIM) capacitor in a standard $0.25{\;}\mu\textrm{m}$ digital CMOS process is described. Using all six interconnect layers, this capacitor exploits both the lateral and vertical electrical fields to increase the capacitance density (capacitance per unit area). Compared to a conventional parallel plate capacitor in the four upper metal layers, this capacitor achieves lower parasitic substrate capacitance, and improves the capacitance density by a factor of 4. Measurements and an extracted model for the capacitor are also presented. Calculations, model and measurements agree very well.