• ETRI Journal
• /
• v.33 no.3
• /
• pp.462-465
• /
• 2011

A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 ${\mu}m$ standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point ($P_{1dB}$) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.

• ETRI Journal
• /
• v.38 no.6
• /
• pp.1031-1041
• /
• 2016

This paper presents millimeter-wave (mmWave) propagation characteristics and channel model parameters including path loss, delay, and angular properties based on 28 GHz and 38 GHz field measurement data. We conducted measurement campaigns in both outdoor and indoor at the best potential hotspots. In particular, the model parameters are compared to sub-6 GHz parameters, and system design issues are considered for mmWave 5G Giga communications. For path loss modeling, we derived parameters for both the close-in free space model and the alpha-beta-gamma model. For multipath models, we extracted delay and angular dispersion characteristics including clustering results.

• Journal of electromagnetic engineering and science
• /
• v.10 no.4
• /
• pp.322-327
• /
• 2010

Spaceborne sparse array radar for ground moving targets indication (GMTI) has outstanding advantage over full array radar for constructing ultra-large aperture. Rapid development of millimeter wave (MMW) technology make it possible for realizing MMW GMTI radar, which is much more sensitive to slow moving ground target. The paper presented the system model of a multi-carrier frequency sparse array MMW radar as well as preliminary simulation results, which showed future application of the system is very promising.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1022-1024
• /
• 2009

Stereoscopic Images provide depth information with the relative distances between the objects in the images. There are many different ways to extract disparity maps from the visible spectral images. For the infrared spectral range, the same approach cannot be utilized for the innate low resolution and colorless features because typical methods require corresponding features between the images. The authors suggest a new approach that makes use of image segmentation to obtain depth information for stereoscopic millimeter-wave images. For image segmentation a selective visual attention model based on the theory of a feature-integration of attention is used. Experimental results show the proposed method provides reasonable depth information for object shape recognition and display.

• Journal of IKEEE
• /
• v.16 no.2
• /
• pp.127-130
• /
• 2012

In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.2
• /
• pp.2-11
• /
• 2000

Technologies for high-speed transistors, active devices essential to the fabrication of millimeter wave circuits have developed drastically with the design and processing techniques. The high frequency transistors, made of GaAs or InP related compound semiconductors mainly, are in the form of MODFETs and HBTs. Other than traditional III-V compound semiconductor materials, SiGe and GaN technologies are emerging as viable candidates of millimeter-wave devices. In this paper, basis and applications of millimeter-wave transistors are introduced.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2006.05a
• /
• pp.603-606
• /
• 2006

In this study, we proposed a Modified Log-Periodic Tooth antenna structure with reflector for millimeter wave image sensor of PMMW(Passive Millimeter Wave). PMMW image sensor satisfy the requirements, such as, High Gain, Wideband, and Planar antenna structure.

• International journal of advanced smart convergence
• /
• v.9 no.4
• /
• pp.156-166
• /
• 2020

In this paper, to improve spectral efficiency and mitigate interference in coordinated millimeter-wave systems, we proposes an optimal user group and beam selection scheme. The proposed scheme improves spectral efficiency by mitigating intra- and inter-cell interferences (ICI). By examining the effective channel capacity for all possible user combinations, user combinations and beams with minimized ICI can be selected. However, implementing this in a dense environment of cells and users requires highly complex computational abilities, which we have investigated applying multiclass classifiers based on machine learning. Compared with the conventional scheme, the numerical results show that our proposed scheme can achieve near-optimal performance, making it an attractive option for these systems.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.9
• /
• pp.25-33
• /
• 2007

In this paper, the high isolation and wideband 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) single balanced cascode mixer was designed and fabricated. Also, we designed and fabricated a 3 dB tandem coupler which has a high isolation and wideband characteristic. The single balanced resistive mixer which does not require an external IF balun was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT's are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 189 GHz and the maximum oscillation frequency($f_{max}$) is 334 GHz. A 94 GHz single balanced cascode mixer was fabricated using our 0.1 ${\mu}m$ MHEMT MIMIC process. From the measurements, the fabricated couplers showed wideband characteristics. The conversion loss of single balanced cascode mixer was 9.8 dB at an LO power of 10.9 dBm. The LO to RF isolation of single balanced cascode mixer was 29.5 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other single balanced mixers.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.12
• /
• pp.1-6
• /
• 2007

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.