• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.139.3-139
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• 1998

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.19-19
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• 2004

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.63-71
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• 2001

The effects of an Ag seed layer on the magnetic properties and the microstructural evolution of SmCo/Cr thin films deposited on glass substrates were investigated. Coercivity of the films is 2.0 kOe when the thickness of Ag seed layer was 1nm thick, but it increased to 2.7 kOe when the Ag seed layer thickness is 3 nm. The increase of coercivity for film with 3 nm-thick Ag is due to roughness of Cr and grain size of Cr by the Ag microbumps. Ar partial pressure influenced on the formation of Ag microbumps, for example, they were formed at 5 mTorr when Ag thickness was 1 nm. The mechanism of magnetization reversal of the SmCo films changed from domain wall motion to domain rotation as the Ag inserted. This was thought to be due to inhibition of domain wall motion by the reduction of Cr grain size and the increase of roughness.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.775-783
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• 2012

The effect of thermal annealing on the in-situ growth characteristics of intermetallics (IMCs) and the mechanical strength of Cu pillar/Sn-3.5Ag microbumps are systematically investigated. The $Cu_6Sn_5$ phase formed at the Cu/solder interface right after bonding and grew with increased annealing time, while the $Cu_3Sn$ phase formed at the $Cu/Cu_6Sn_5$ interface and grew with increased annealing time. IMC growth followed a linear relationship with the square root of the annealing time due to a diffusion-controlled mechanism. The shear strength measured by the die shear test monotonically increased with annealing time. It then changed the slope with further annealing, which correlated with the change in fracture modes from ductile to brittle at a critical transition time. This is ascribed not only to the increasing thickness of brittle IMCs but also to the decreasing thickness of the solder, as there exists a critical annealing time for a fracture mode transition in our thin solder-capped Cu pillar microbump structures.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.83-88
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• 2018

The electromigration (EM) tests were performed at $150^{\circ}C$ with $1.5{\times}10^5A/cm^2$ conditions in order to investigate the effect of non-conductive film (NCF) trap on the electrical reliability of Cu/Ni/Sn-Ag microbumps. The EM failure time of Cu/Ni/Sn-Ag microbump with NCF trap was around 8 times shorter than Cu/Ni/Sn-Ag microbump without NCF trap. From systematic analysis on the electrical resistance and failed interfaces, the trapped NCF-induced voids at the Sn-Ag/Ni-Sn intermetallic compound interface lead to faster EM void growth and earlier open failure.