• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.167-171
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• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• 한국정밀공학회지
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• 제13권5호
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• pp.122-130
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• 1996

In this study, machinability of some aluminum-magnesium alloy are experimentally investigated using polycrystalline diamond tool with turning, and evaluated some independent cutting variables affected micrometal cutting characteristics as cutting force, specific cutting resistance, shear angles. To know the effect of cutting parameters of single point diamond machining, experiments were performed to measure cutting forces for high speed turning of aluminum alloy 6061-T6, SM45C and FC20 with poly- crystalline diamond and coated cemented carbide tool. Independent cutting variables were changed to a variety of cutting speed, feed rate, rake angles, material properties of workpiece and tool. Futhermore. Some useful informations are obtained in this study can guide micro metal cutting of aluminum alloy with diamond tool.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• 한국표면공학회지
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• 제47권6호
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• pp.293-296
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• 2014

Fe-Ni has been of great interest because it is known as one of low thermal expansion alloys as various application areas. This alloy was fabricated by electroforming process, and effect of heat treatment on thermal expansion and hardness was investigated. Nano-crystalline structure of 13.3 - 63.5 nm in size was observed in the as-deposited alloy. To investigate the effect of heat treatment on grain growth and mechanical/thermal properties, we conducted hardness and coefficient of thermal expansion (CTE). From this, we confirmed these properties were varied by heat treatment. In this nano-crystalline alloy, we could observe abnormal behavior in thermal expansion between $350-400^{\circ}C$. Additionally, an abrupt change in hardness has also been observed. However, once the grains grow up to micro-sized the mechanical and thermal properties mentioned above were stabilized similar to those of bulk alloys due to heat treatment.

• 한국결정성장학회지
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• 제14권5호
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• pp.215-219
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• 2004

ZnO 에피박막을 사파이어 기판의 (0001)면 상에 RF magnetron sputtering 법으로 성장하였다. 박막의 성장속도는 약 0.1~0.2$\mu\textrm{m}$/hr 였으며, 기판온도가 $600^{\circ}C$일 때, 약 400~500nm두께의 단결정상의 박막을 성장할 수 있었다. 성장된 단결정상 박막에 대하여 XRD분석과 TEM을 이용하여 박막의 품질과 미세구조를 평가하였다.

• 전기학회논문지
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• 제56권5호
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• pp.905-909
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• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.31-34
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing(CMP) process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum 89 arcses. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Sapphire wafers's waveness has higher abrasion rate in the edge of the wafer than its center due to Newton's Ring interference.

• 대한기계학회논문집A
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• 제28권1호
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• pp.85-91
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.35-36
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• 2008

In this paper, we studied the long term durability estimation for crystalline photovoltaic module while exposing to mechanical stress. Solar cell and PV module have many different kinds of stresses from cell to module fabrication. For this reason, some solar cell shows micro crack that decrease crystallization. In here, we expose artificial mechanical load on surface of PV module. Through this, the periodic external force on PV module might give an negative effect. The further analysis is described in the following paper.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.871-873
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• 2009

We report on the growth of rubrene ($C_{42}H_{28}$) wire fabricated by thermal evaporation, followed by solvent-vapor annealing for the application of organic thin film transistor. Solvent-vapor annealing was carried out in precisely controlled vapor pressure at elevated temperature. Micro-sized, and elongated rubrene wire was obtained via solvent annealing process reproducibly. Optical image and XRD data shows highly crystalline quality of rubrene wire.