• 한국진공학회지
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• 제5권4호
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• pp.354-358
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• 1996

precuror alternating metalorganic chemical vapor deposition(PAMOCVD)에 의한 InGaAs의 성장시에 높은 indium의 유입이 관찰되었다. gallium과 indium의 전구물질의 분해의 차이 그리고 이에따른 분해된 전구물질 분자의 흡착행동의 차이를 고려함으로써 PAMOCVD 성장시의 결정내로의 높은 indium유입의 mechanism을 제안하였다.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.458-464
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• 1998

This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.14-17
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• 2005

The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.73-78
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• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• 한국초전도ㆍ저온공학회논문지
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• 제4권2호
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• pp.21-26
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• 2002

Textured CeO2 buffer layers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition (MOCVD). The degree of texture of deposited $CeO_2$ films was strong1y dependent on the deposition temperature (Td) and oxygen Partial Pressure(PO2). ($\ell$00) textured $CeO_2$ films were well deposited at T=500~52$0^{\circ}C$. PO2=0.90~3.33 Torr. The surface morphology showed that the films consisted of columnar CeO2 films grown from the Ni substrates. The root mean square roughness of CeO$_2$ films estimated by atomic force microscopy(AFM) increased as the deposition temperature(Td) increa- sed. The growth rate of the $CeO_2$ films deposited at T=52$0^{\circ}C$ and PO2=2.30 Torr was 150~200 nm/min that was much faster than that of other Physical deposition methods.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.147-147
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.102-102
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• 1999

• 한국재료학회지
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• 제11권11호
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• pp.997-1000
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• 2001

Conducting perovskite oxide, $(Ba,Sr)RuO_3(BSR)$, which has many advantages for $(Ba,Sr)TiO_3(BST)$ due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition(LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in the experiment. The BSR films deposited at 50$0^{\circ}C$ and oxygen flow rate of 100 sccm(standard cc/min) showed an average roughness of 22 $\AA$and resistivity of 810 $\mu$$\Omega$-cm. The roughness of BSR films with oxygen flow rate showed a close relationship with the resistivity of films. BSR (110) peak shifted toward lower Bragg angle with increase of x in the$(Ba_x,Sr_{1-x})TiO_3$. The resistivity of BSR films increased from 810 to 924 $\mu$$\Omega$-cm with increase of Ba content(x).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.195-195
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• 2010

$Ga_2O_3$ thin films have been grown on Si(001) substrates by metalorganic chemical vapor deposition (MOCVD) using dimethylgallium isopropoxide ($Me_2GaO^iPr$, DMGIP) with oxygen as the reactant gas. Suitability of the precursor for CVD was confirmed by thermogravimetric analysis (TGA) and vapor pressure measurement. Deposition was carried out in the substrate temperature range $450-650^{\circ}C$. Spectroscopic ellipsometry, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) and Rutherford back-scattering spectroscopy (RBS) were used to determine the thickness, crystallinity, and composition and stoichiometry of the films, respectively. From the slope of the Arrhenius plot in the temperature range $500-550^{\circ}C$, the activation energy of deposition was found to be $225.5\;kJ\;mol^{-1}$. As-deposited films were amorphous, but the monoclinic $\beta-Ga_2O_3$ phase was revealed after annealing the films in air at $1050^{\circ}C$. The XPS and RBS analyses indicate that the $Ga_2O_3$ films obtained by using DMGIP were found to be almost stoichiometric.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.65.2-65
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• 2003

Praseodymium oxid ($Pr_2$$O_3$) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance-voltage and current-voltage measurements on metal-oxide-semiconductor capacitors of several areas. The $Pr_2$$O_3$ films have shown a dielectric constant = 23-25 and a leakage current density of $8.8{\times}10$-e $A/\textrm{mm}^2$ at ＋1 V.