• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.257-260
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• 2016

In this paper, two configurations (T-type and Y-type) of dual band Wilkinson Power Divider based upon Hilbert curves are presented. Formerly, the concept of Hilbert Curves was implemented in only designing microstrip antennas. In power dividers, this is the very first attempt of incorporating them for size reduction. In addition to this, an effect of inculcation of high-dielectric constant layer (Hafnium-oxide, HfO₂, ε_r= 25) between a substrate and top metallization in both configurations was investigated. The proposed configurations are designed on a high resistive silicon substrate (HRS) for L and S bands with resonating frequencies of 1.575 and 3.4 GHz. Both configurations have return loss that is better than 20 dB and an insertion loss of around 6 dB; isolation better than 30 dB was achieved for both models.

• Journal of Electrical Engineering and Technology
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• v.4 no.2
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• pp.282-286
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• 2009

This paper presents the design of a patch antenna for GPS portable devices. The antenna is designed to operate at Ll band on an FR4 PCB with a thickness of 1.6mm, a dielectric constant of 3.8 and two metallization layers. The antenna has a dimension of 49mm${\times}$36mm and operates at 1.5754GHz with a return loss of -36dB and a measured bandwidth of 250MHz.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.31-33
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• 2007

This work presents the simplified mechanism that the microstrip line generates the radiated emission which is one of the measures on the EMI levels. The electric currents on the metallization of the structure are input to the radiation integrals with the Green's functions being derived to consider the stratification of the microstrip. The simulated results suggest the method of the conceptualization on the RE characteristics of the signal trace in the PCB structure.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.809-812
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• 1992

Charateristics of the ECR etch were Investigated about $MoSi_2$ layer which is widely used for the capping layer and barrier layer in VLSI metallization. The etch rate was evaluated according to gas ratio of $SF_6/BCl_3$, $N_2$ flow rate, RF power and chamber pressure. The chamber pressure, the most important factor, represented the maximum etch rate at about the pressure of 10 mTorr.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.45-49
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• 2015

In the past few decade's researchers, scientists, engineers of photovoltaic (PV) industry are working towards low cost high efficiency Si solar cells. Over the last decade the interest in back contact solar cell has been acquiring as well as a gradual introduction to industrial applications is increasing. As an alternative to conventional solar cells with a front and rear contact, the back-contact cells has remained a research topic. The aim of this work is to present a comprehensive summary of results incurred in the back contact back junction solar cells such as interdigitated back-contact (IBC), emitter wrap-through (EWT) and metallization wrap-through (MWT) over the years.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.123-124
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• 2008

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1M{\Omega}$ to several hundreds of ${\Omega}$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• Resources Recycling
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• v.7 no.1
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• pp.34-40
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• 1998

This shdy was invcsligated on reduction rate of EAF dust wth solid carbon cantents. The rate equation for reduction ofEAF dust was obtaincd in the tempcrahlrc range cot 910-108O"C, and the ratio of zinc removal and metallization raho of ironoxides to thc reaction time was also analysed. From the XRD analysis for slag residues '||'&'||'er reaction, the cxistcncc DI themixture of Akemmite[Ca2MgSi2O.] and SiO, was identified.ed.

• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.210-216
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• 1995

최근에 연구되고 있는 저온, 저압 플라즈마를 이용한 식각기술 중 차세대 반도체 metallization 공정에 응용될 수 있는 가장 적합한 기술이라 사료되는 유도 결합형 플라즈마(Inductively Coupled Plasma : ICP)를 이용한 RF 스퍼터 식각 반응로를 제작하고 이에 대한 특성을 조사하였다. 유도용 주파수로서 13.56 MHz를 사용하였으며 유도결합을 일으키기 위해 3.5회의 나선형 평판형 코일을 사용함으로써 비교적 대면적에 균일한 고밀도 플라즈마를 얻을 수 있었다. 또한 기판에 독립적인 13.56MHz RF power를 가해 DC 바이어스를 인가함으로써 기판으로 입사하는 하전입자들의 에너지를 조절하여 기판에의 손상을 최소화하며 SiO2의 스퍼터 식각 속도를 극대화할 수 있었다. 따라서 이러한 특성을 갖는 유도 결합형 플라즈마 식각장치를 차세대 반도체의 RF스퍼터 식각 공정에 응용할 수 있으리라 사료된다.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.101-106
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• 1999

The main consideration factor to design a magnetron of the sputtering system for TFT-LCD metallization is high sheet resistance (Rs) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to bve considered full target erosion and high film uniformity. After an aluminum-2 at.% and alloy target was installed in a magnetron source and the film was deposited on the glass of 600${\times}$720 mm, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4mtorr and 10kW, the magnet tilt for the high Rs uniformity of 8.38% was 7mm. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1637-1643
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• 1989

In this study, phosphosilicate glass(PSG) film was deposited by the oxidation of phosphine (PH3) and silane(SiH4) in nitrogen ambient with a conventional conveyerized Atmospheric Pressure Chemical Vapor Deposition(APCVD)system and phosphorus concentration is measured by using FT-IR technique. The flow characteirstics and etch rate variations ofthe films, depending on phosphorus concentrations, are investigated. Special emphasis is focused on the yield variations of NMOS-based 256K DRAM with 1.2\ulcorner metallization spacing with increasing phosphorus concentrations. As a result, the data indicates that the fairly good yield can be obtained within the range of between 8 and 10wt% phosphorus concentration, which result in a slope of flow within 45\ulcorner10\ulcorner The analysi of failure mechanism is also accompanied.