Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

The Etching Characteristics of $MoSi_2$ film by ECR Etch

ECR Etch 에 의한 $MoSi_2$ 막의 식각 특성

  • Lee, H.S. (Department of Electrical Eng. Korea University) ;
  • Kang, H.B. (Department of Electrical Eng. Korea University) ;
  • Park, G.S. (Department of Electrical Eng. Korea University) ;
  • Lee, C.J. (Department of Electrical Eng. Korea University) ;
  • Sung, Y.K. (Department of Electrical Eng. Korea University)
  • Published : 1992.07.23
Download PDF
⟨ Previous Next ⟩

Abstract

Charateristics of the ECR etch were Investigated about $MoSi_2$ layer which is widely used for the capping layer and barrier layer in VLSI metallization. The etch rate was evaluated according to gas ratio of $SF_6/BCl_3$, $N_2$ flow rate, RF power and chamber pressure. The chamber pressure, the most important factor, represented the maximum etch rate at about the pressure of 10 mTorr.

Keywords