• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.58-61
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• 2006

Carefully designed ZnO nanowire-film hybrid nanostructure, composed of a bottom ZnO film, ZnO nanowire arrays, and a top ZnO film, was consecutively fabricated by adjusting the supersaturation conditions using a metal-organic chemical vapor deposition (MOCVD) to utilize the vertically aligned ZnO nanowires as the oxygen sensors. The decrease of current flow through ZnO nanowire arrays increasing oxygen pressure showed the high potential for the application of the ZnO hybrid nanostructure to the oxygen sensors. In addition, it was confirmed that the oxygen sensing characteristics of this hybrid nanostructure were attributed to the defects near the surface of the nanowires.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.358-359
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• 2006

Ru-C nano-composite films were prepared by MOCVD, and their microstructures and their electrode properties for oxygen gas sensors were investigated. Deposited films contained Ru particles of 5-20 nm in diameter dispersed in amorphous C matrix. The AC conductivities associating to the interface charge transfer between Ru-C composite electrode and YSZ electrolyte were 100-1000 times higher than that of conventional paste-Pt electrodes. The emf values of the oxygen gas concentration cell constructed from the nano-composite electrodes and YSZ electrolyte showed the Nernstian theoretical values at low temperatures around 500 K. The response time of the concentration cell was 900 s at 500 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.443-447
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• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.53-53
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• 2011

As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.134-137
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• 2000

Zirconia films stabilized b $Y_2O_3$, YSZ, films were deposition by metal organic chemical vapor deposition (MOCVD) onto various kind of substrates. $Y_2O_3$, $ZrO_2$and the mixtures of these two were deposited and characterized. The deposition rate, the film composition and the structure could be systematically varied through the $Y(C_{11}H_{19}O_2)_3$, Zr(O.t-$C_H_9)_4$source gas ratios and the deposition temperature. The Y/Zr ratio in YSZ film could be adjusted by controlling the ratio of $Y(C_{11}H_{19}O_2)_3$, Zr(O.t-$C_4H_9)_4$partial pressures. This is because the ratios of the deposition rates of Y and Zr atoms in $Y_2O_3$and $ZrO_2$films to those in YSZ films, Ф, are constant irrespective of the input gas concentration. However, the Y/Zr ratio was found to be smaller than that estimated based on the deposition rates of un-mixed $Y_2O_3$and $ZrO_2$films. This is because the Фs of Y and Zr atoms are not equal. The activation energy of $Y_2O_3$component in YSZ films was similar to that of $ZrO_2$component in YSZ films. These YSZ values were more than 4 times larger than those of un-mixed $Y_2O_3$or $ZrO_2$films.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.816-819
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• 1995

(Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.451-451
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• 2009

CdTe는 에너지밴드갭이 1.45eV인 직접천이헝 II-VI 화합물 반도체로서 높은 광홉수율과 가시광 영역의 에너지밴드캡으로 태양전지, x-선 검출기 등에 널리 사용되고 있다. 본 연구에서는 Metal Organic Chemical Vapor Deposition (MOCVD)으로 Si 기판위에 CdTe 에피 박막을 성장 하고자 하였다. Cd, Te의 금속유기 화합물로는 Dimethylcadmium(DmCd)과 Diisopropyltellurium(DIPTe)을 사용하였다. 기판으로는 Si 을 사용하였으며 박막성장 온도를 $360^{\circ}C\;{\sim}\;500^{\circ}C$로 제어하여 에피박막이 형성되는 조건을 얻고자 하였다. $360^{\circ}C$, $450^{\circ}C$에서 성장된 CdTe박막은 다양한 방향이 존재하는 다결정 구조 였으며 $500^{\circ}C$의 경우 단결정 에피 박막 성장이 이루어졌음을 확인하였다. 본 연구를 통한 CdTe 에피박막은 기존의 열증착 등으로 제조되는 다결정 CdTe 박막과 비교하여 높은 에너지변환 효율을 얻을 것으로 기대된다.