• Current Applied Physics
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• 제18권11호
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• pp.1300-1305
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• 2018

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• Progress in Superconductivity
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• 제7권2호
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• pp.158-161
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• 2006

Superconducting YBCO films were successfully fabricated by MOD process using chemically modified precursor solution. In this study, a chemically modified precursor solution for MOD processing was synthesized using metal-organic salts and organic additives. It was shown that crack-free and uniform precursor films were formed after calcination in humidified Oxygen atmosphere. Less than 3 hours are required to finish the calcination process. XRD measurement shows that $BaF_2,\;CuO,\;Y_2O_3$ are major constituent of precursor films. Furthermore, YBCO films without any secondary phases were successfully fabricated after annealing in wet $Ar/O_2$ atmosphere. The YBCO film prepared on a $LaAlO_3$ single crystal substrate ($10mm{\times}10mm$) gives transport $I_c$ of 10A at 77K. This chemical modification approach is a possible candidate for improving MOD-processing of YBCO coated conductor.

• 한국초전도ㆍ저온공학회논문지
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• 제8권3호
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• pp.37-40
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• 2006

Oxide buffer layers for YBCO coated conductors were fabricated using MOD processing and development of microstructure and texture were investigated. A $CeO_2$ buffer layers were formed on RABiTS tape. Acetate-based precursor solution was employed to synthesize the precursor solution. Subsequently, the precursor solution was stabilized and modified with triethanolamine. $CeO_2$ precursor gel film was coated and annealed in $Ar/H_2$ atmosphere at high temperature. An annealed $CeO_2$ film shows mixed orientation with high (001) texturing. It was shown that (111) texture of $CeO_2$ layers were enhanced by multiple coating. This degradation was attributed to development of microcracks in the multiply coated $CeO_2$ films. Also discussed are the synthesis and the characterization of $La_2Zr_2O_7$ (LZO) buffer layers on RABiTS tape. A biaxially textured LZO buffer layer was fabricated with MOD processing method using metal alkoxide based precursor solution. It was shown that the LZO film were epitaxially grown on RABiTS tape and crack-free & uniform surface was obtained after annealing in $Ar/H_2$ atmosphere.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.60.2-60.2
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• 2007

• Bulletin of the Korean Chemical Society
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• 제18권7호
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• pp.785-788
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• 1997

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.230.2-230.2
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• 2015

Nanoparticles of magnesium ferrite are used as a heterogeneous catalyst, humidity sensor, oxygen sensor and cure of local hyperthermia. These applications usually utilize the magnetic behavior of these nanoparticles. Moreover, magnetic properties of nanoferrites exhibit rather complex behavior compared to bulk ferrite. The magnetic properties of ferrites are complicated by spins at vortices, surface spins. Reports till date indicate strong dependency on the structural parameters, oxidation state of metal ions and their presence in octahedral and tetrahedral environment. Thus we have carried out investigation on magnesium ferrite nanoparticles in order to study coordination, oxidation state and structural distortion. For present work, magnesium ferrite nanoparticles were synthesized using nitrates of metal ions and citric acid. Fe L-edge spectra measured for these nanoparticles shows attributes of $Fe^{3+}$ in high spin state. Moreover O K-edge spectra for these nanoparticles exhibit spectral features that arises due to unoccupied states of O 2p character hybridized with metal ions. Mg K-edge spectra shows spectral features at 1304, 1307, 1311 and 1324 eV for nanoparticles obtained after annealing at 400, 500, 600, 800, 1000, and $1200^{\circ}C$. Apart from this, spectra for precursor and nanoparticles obtained at $300^{\circ}C$ exhibit a broad peak centered around 1305 eV. A shoulde rlike structure is present at 1301 eV in spectra for precursor. This feature does not appear after annealing. After annealing a small kink appear at ~1297 eV in Mg K-edge spectra for all nanoparticles. This indicates changes in local electronic structure during annealing of precursor. Observed behavior of change in local electronic structure will be discussed on the basis of existing theories.

• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1572-1576
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• 2006

A dimeric precursor, $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ for the CVD of copper metal films, (dmaeH = N,N-dimethylaminoethanol) was synthesized by the reaction of copper(II) acetate monohydrate ($Cu(OCOCH_3)_2{\cdot}H_2O$) and dmaeH in toluene. The product was characterized by m.p. determination, elemental analysis and X-ray crystallography. Molecular structure of $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ shows that a dimeric unit $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ is linked to another through hydrogen bond and it undergoes facile decomposition at 300 C to deposit granular copper metal film under nitrogen atmosphere. The decomposition temperature, thermal behaviour, kinetic parameters, evolved gas pattern of the complex, morphology, and the composition of the film were also investigated.

• 한국분말재료학회지
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• 제23권2호
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• pp.136-142
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• 2016

As precursors of cathode materials for lithium ion batteries, $Ni_{1/3}Co_{1/3}Mn_{1/3}(OH)_2$ powders are prepared in a continuously stirred tank reactor via a co-precipitation reaction between aqueous metal sulfates and NaOH in the presence of $NH_4OH$ in air or nitrogen ambient. Calcination of the precursors with $Li_2CO_3$ for 8 h at $1,000^{\circ}C$ in air produces dense spherical cathode materials. The precursors and final powders are characterized by X-ray diffraction (XRD), scanning electron microscopy, particle size analysis, tap density measurement, and thermal gravimetric analysis. The precursor powders obtained in air or nitrogen ambient show XRD patterns identified as $Ni_{1/3}Co_{1/3}Mn_{1/3}(OH)_2$. Regardless of the atmosphere, the final powders exhibit the XRD patterns of $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ (NCM). The precursor powders obtained in air have larger particle size and lower tap density than those obtained in nitrogen ambient. NCM powders show similar tendencies in terms of particle size and tap density. Electrochemical characterization is performed after fabricating a coin cell using NCM as the cathode and Li metal as the anode. The NCM powders from the precursors obtained in air and those from the precursors obtained in nitrogen have similar initial charge/discharge capacities and cycle life. In conclusion, the powders co-precipitated in air can be utilized as precursor materials, replacing those synthesized in the presence of nitrogen injection, which is the usual industrial practice.

• 한국재료학회지
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• 제23권3호
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.