• 한국재료학회지
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• 제21권5호
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• pp.288-294
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• 2011

Simultaneous Ni and C codeposition by electrolysis was investigated with the aim of obtaining better corrosion resistivity and surface conductivity of a metallic bipolar plate for application in fuel cells and redox flow batteries. The carbon content in the Ni-C composite plate fell in a range of 9.2~26.2 at.% as the amount of carbon in the Ni Watt bath and the roughness of the composite were increased. The Ni-C composite with more than 21.6 at.% C content did not show uniformly dispersed carbon. It also displayed micro-sized defects such as cracks and crevices, which result in pitting or crevice corrosion. The corrosion resistance of the Ni-C composite in sulfuric acid is similar with that of pure Ni. Electrochemical test results such as passivation were not satisfactory; however, the Ni-C composite still displayed less than $10^{-4}$ $A/cm^2$ passivation current density. Passivation by an anodizing technique could yield better corrosion resistance in the Ni-C composite, approaching that of pure Ni plating. Surface resistivity of pure Ni after passivation was increased by about 8% compared to pure Ni. On the other hand, the surface resistivity of the Ni-C composite with 13 at.% C content was increased by only 1%. It can be confirmed that the metal plate electrodeposited Ni-C composite can be applied as a bipolar plate for fuel cells and redox flow batteries.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• Current Photovoltaic Research
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• 제9권3호
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• 한국세라믹학회지
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• 제36권2호
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• pp.172-177
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• 1999

흑연 및 카본재료는 알칼리 금속을 intercalation/de-intercalation 시킬수 있는 특성을 지니고 있으며, 또한 Li-intercalated carbon의 화학 potential이 Li 금속에 가까운 낮은 값을 지닌 특성으로 리튬 이차전지의 anode 전극재료로서 널리 쓰일 가능성이 매우 크다. 본 연구에서는 카본재료 중 mesocarbon microbeads (MCMB)를 리튬 이차전지의 anode 전극재료로 사용하여 전지반응을 수행하고, 전극의 충.방 전 특성과 전극계면 반응특성에 대하여 연구하였다. 즉, Li/carbon(MCMB) 전지 cell를 제작하고 전해질과 전극계면에서 일어나는 전기화학 반응특성을 충.방 전 시험, Potentionat/Galvanostat 시험, FT-IR 분석, XRD 및 SED 분석에 의하여 고찰하였다. 전지반응이 진행되면서 전극과 전해질 계면에서 고체상태의 부동태 막 (passivation film)이 형성되었으며, 일단 형성된 막은 전해질 내에 용해되지 않고 충.방 전 횟수가 증가하면서 두께가 증가되었다. 또한, 이러한 전극 계면에서 형성된 부동태 막과 중전용량과의 관계에 대하여 고찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.45-48
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• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

• 한국분말재료학회지
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• 제10권6호
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• pp.430-435
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• 2003

The phenomenon of electrical explosion of conductors is considered in the context of the changes in the energy and structural states of the metal at the stages of energy delivery and relaxation of the primary products of EEC. It is shown that these changes are related to the forced interaction of an intense energy flux with matter and to the subsequent spontaneous relaxation processes. The characteristics of nano-sized metal powders are also discussed. The preferential gas media during EEC is Ar+$H_2$. An increase in $e/e_s$ (in the range of values studied) leads to a reduction in the metal content. For reactive powders obtained with high metal content, it is necessary to separate the SFAP fractions, which settled on the negative electrode of the electric filter.

• 전기화학회지
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• 제15권3호
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• pp.135-148
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• 2012

Ionic liquids are steadily attracting interests throughout a recent decade and their application is expanding into various fields including electrochemistry due to their unique properties such as non-volatility, inflammability, low toxicity, good ionic conductivity, wide electrochemical potential window and so on. These features make ionic liquids become an alternative solution for electrodeposition of metals that cannot be electroplated in aqueous electrolytes. In this review, we classify investigated metals into three categories, which are light (Li, Mg), refractory (Ti, Ta) and noble (Pd, Pt, Au) metals, rather than covering the exhaustive list of metals and try to update the recent development in this area. In electrodeposition of light metals, granular fine Li particles were successfully obtained while the passivation of electrodeposited Mg layers is an obstacle to reversible deposition-dissolution process of Mg. In the case of refractory metals, the quality of Ta and Ti deposit particles was effectively improved with addition of LiF and pyrrole, respectively. In noble metal category, EMIM TFSA ionic liquid as an electrolyte for Au electrodeposition was proven to be effective and BMP TFSA ionic liquid developed a smooth Pd deposit. Pt nanoparticle production from ionic liquid droplet in aqueous solution can be cost-effective and display an excellent electrocatalytic activity.

• 센서학회지
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• 제32권6호
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.198-198
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• 2013

Metal-Oxide-Semiconductor (MOS)에서 사용되는 다양한 channel materials로 high electron mobility을 가지는 III-V compound semiconductor가 대두되고 있다 [1,2]. 하지만 이러한 III-V compound semiconductor는 Si에 비해 안정적인 native oxide가 부족하기 때문에 Si, Ge, Al2O3과 BeO 등과 같은 다양한 물질들의 interface passivation layers (IPLs)에 대한 연구가 많이 되고 있다. 이러한 IPLs 물질은 0.5~1.0 nm의 매우 얇은 physical thickness를 가지고 있고 또한 chemical inert하기 때문에 플라즈마 식각에 대한 연구가 되고 있지만 IPLs 식각 후 기판인 III-V compound semiconductor에 physical damage과 substrate recess를 줄이기 위해서 높은 선택비가 필요하다. 이러한 식각의 대안으로 원자층 식각이 연구되고 있으며 이러한 원자층 식각은 반응성 있는 BCl3의 adsorption과 low energy의 Ar bombardment로 desorption으로 self-limited한 one monolayer 식각을 가능하게 한다. 그러므로 본 연구에서는, III-V compound semiconductor 위에 IPLs의 adsorption과 desorption의 cyclic process를 이용한 원자층식각으로 다양한 물질인 SiO2, Al2O3 (self-limited one monolayer etch rate=about 1 ${\AA}$/cycle), BeO (self-limited one monolayer etch rate=about 0.75 ${\AA}$/cycle)를 얻었으며 그 결과 precise한 etch depth control로 minimal substrate recess 식각을 할 수 있었다.