Simulation Method of Temperature Dependent Threshold Voltage Shift in Metal Oxide Thin-film Transistors (온도에 의한 산화물 박막트랜지스터의 문턱전압 이동 시뮬레이션 방안)
-
- Journal of the Korean Institute of Electrical and Electronic Material Engineers
- /
- v.28 no.3
- /
- pp.154-159
- /
- 2015