• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.117-117
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• 2008

In MIM capacitor, poly-Si bottom electrode is replaced with metal bottom electrode. Noble metals can be used as bottom electrodes of capacitors because they have high work function and remain conductive in highly oxidizing conditions. In addition, they are chemically very stable. Among novel metals, Ru (ruthenium) has been suggested as an alternative bottom electrode due to its excellent electrical performance, including a low leakage of current and compatibility to high dielectric constant materials. Chemical mechanical planarization (CMP) process has been suggested to planarize and isolate the bottom electrode. Even though there is a great need for development of Ru CMP slurry, few studies have been carried out due to noble properties of Ru against chemicals. In the organic chemistry literature, periodate ion ($IO_4^-$) is a well-known oxidant. It has been reported that sodium periodate ($NaIO_4$) can form $RuO_4$ from hydrated ruthenic oxide ($RuO_2{\cdot}nH_2O$). $NaIO_4$ exist as various species in an aqueous solution as a function of pH. Also, the removal mechanism of Ru depends on solution of pH. In this research, the static etch rate, passivation film thickness and wettability were measured as a function of slurry pH. The electrochemical analysis was investigated as a function of pH. To evaluate the effect of pH on polishing behavior, removal rate was investigated as a function of pH by using patterned and unpatterned wafers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.94-98
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• 2008

In order to improve the specific capacitance of amorphous hydrous manganese oxide ($MnO_2$) for supercapacitors, it is made into composites with vapour-grown carbon nanofibers (VGCF) having the VGCF ratio as 40 wt% in the composites. The electrochemical properties of these composites are investigated in 1.0 M $Na_2SO_4$ by cyclic voltammetry (CV), impedance measurements and chronopotentiometric charger/discharger. The composite with 40 wt% VGCF shows the superior electrochemical performance, whose specific capacitance (based on the mass of $MnO_2$, $0.8mg/cm^2$) is 380 F/g at 20 mV/s and 230 F/g at 500 mV/s. Also, the cycle-life testing of this electrode carried out for 3,000 charge/discharge cycles at $2.0mA/cm^2$ shows 97% capacitance retention.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2038-2040
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• 2000

The main objective of this paper is to design and test a new type of polymer ZnO surge arrester for AC power system of railroad vehicles. Metal oxide surge arrester for most electric power system applications, electric train and subway are now being used extensively to protect overvoltage due to lightning. Surge arresters with porcelain housing must not have explosive breakage of the housing to minimize damage to other equipment when subjected to internal high short circuit current. When breakdown of ZnO elements in a surge arrester occurs due to flashover, fault short current flows through the arrestor and internal pressure of the arrester rises. The pressure rise can usually be limited by fitting a pressure relief diaphragm and transferring the arc from the inside to the outside of the housing. However, there is possibility of porcelain fragmentation caused by the thermal shock, pressure rise. etc. Non-fragmenting of the housing is the most desired way to prevent damage to other equipment. The pressure change which is occurred by flashover become discharge energy. This discharge energy raises to damage arrester housing and arrester housing is dispersed as small fragment. Therefore, the pressure relief design is requested to obstruct housing dispersion. The main research works are focused on the structure design by finite element method, pressure relief of module, and studies of performance of surge arrester for electric railway vehicle.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.769-776
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• 2008

The stereoselective synthesis of chiral terminal epoxide is of immense interest due to their utility as versatile starting materials as well as chiral intermediates. In this study, new chiral Co(salen) complexes bearing cobalt(II) chloride, iron(III) chloride and zinc(II) nitrate have been synthesized and characterized. The mass and EXAFS spectra provided the direct evidence of formation of complex. Their catalytic activity and selectivity have been demonstrated for the asymmetric ring opening of terminal epoxides such as styrene oxide and phenylglycidylether by hydrolytic kinetic resolution technology and for the synthesis of glycidyl buthylate. The easily prepared complexes exhibited very high enantioselectivity for the asymmetric ring opening of epoxides with $H_2O$ nucleophile, providing enantiomerically enriched terminal epoxides (>99% ee). The newly synthesized chiral salen showed remakablely enhanced reactivity with substantially low loadings. The system described in this work is very efficient for the sinthesis of chiral epoxide and 1,2-diol intermediates.

• Journal of Environmental Health Sciences
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• v.36 no.3
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• pp.236-246
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• 2010

In preparative anti-corrosive coating experiments, polyaniline was obtained by reacting an oxidizing agent with the monomer aniline. Further, the primer coating was prepared using a variety of widely-used materials such as urethane resin. For the top coating, epoxy resin and acrylic urethane resin were used. Characteristics of the coatings were assessed according to KS and ASTM specifications, and the structure of the polyaniline was characterized using FT-IR and TGA. For analysis of anti-corrosive properties in salt-spray experiments, measurements of the oxidation state of iron and surface atomic analysis were conducted using XPS and SEM-EDX. Unlike general anti-corrosive coatings which exhibit anti-corrosive effects only as a primer coating, the anti-corrosive coatings using polyaniline as the anti-corrosive pigment showed a marked synergistic effect with the top coatings. In other words, the top coatings not only produce a fine view effect, but also increase, through interaction with the primer coatings, the resistance to diffusion of corrosive factors from the external environment. It was also found that, unlike the heavy metal oxide-forming layer of the passive barrier alone, the polyaniline anti-corrosive pigment oxidized iron at the interface with the iron substrate to form a passive barrier in the oxidic layer, and itself formed a potential barrier layer with anti-corrosive factors from the external environment. Although the passive layer was damaged, the damaged area did not become completely oxidized iron; on the contrary, it showed a tendency to reduction. This can be interpreted such that a passive layer is formed again on the damaged area, and that at the same time there is a tendency to self-healing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.271-275
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• 2011

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

• ETRI Journal
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• v.42 no.5
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• pp.781-789
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• 2020

In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (R_s) and parallel (R_p) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S₂₁ at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S₂₁ of 16 dB to 21 dB, input matching (S₁₁) of -14 dB to -5 dB, and output matching (S₂₂) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.53-60
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• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• Journal of IKEEE
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• v.14 no.4
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• pp.257-262
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• 2010

We design a CMOS front-end with wide variable gain and low power consumption for 5.25 GHz band. To obtain wide variable gain range, a p-type metal-oxide-semiconductor field-effect transistor (PMOS FET) in the low noise amplifier (LNA) section is connected in parallel. For a mixer, single balanced and folded structure is employed for low power consumption. Using this structure, the bias currents of the transconductance and switching stages in the mixer can be separated without using current bleeding path. The proposed front-end has a maximum gain of 33.2 dB with a variable gain range of 17 dB. The noise figure and third-order input intercept point (IIP3) are 4.8 dB and -8.5 dBm, respectively. For this operation, the proposed front-end consumes 7.1 mW at high gain mode, and 2.6 mW at low gain mode. The simulation results are performed using Cadence RF spectre with the Taiwan Semiconductor Manufacturing Company (TSMC) $0.18\;{\mu}m$ CMOS technology.)