• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.48-53
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• 1998

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.

• 한국전자현미경학회:학술대회논문집
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• 2000.11a
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• pp.49-51
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.107-107
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.104-104
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• 1997

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.315-318
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• 2004

We developed a vapor induced crystallization (VIC) process for the first time to obtain high quality polycrystalline Si films by sublimating the mixture of $AlCl_3$ and $NiCl_2$. The VIC process enhanced the crystallization of amorphous silicon thin films. The LPCVD amorphous silicon thin films were completely crystallized after 5 hours at 480 $^{\circ}C$. It is known that needle-like grains with very small width grow in the Ni-metal induced lateral crystallization. In our new method, the width of grains is larger because the grain can also grow perpendicular to the needle growth direction. Also the interface between the merging grain boundaries was coherent. As the results, a polycrystalline film with superior microstructure has been obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.114-114
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.115-115
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.68.3-68
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• 1998

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.477-481
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• 2004

High quality polycrystalline silicon is very critical part of the high quality thin film transistor(TFT) for display devices. Metal induced lateral crystallization(MILC) is one of the most successful technologies to crystallize the amorphous silicon at low temperature(below $550^{\circ}C$) and uses conventional and large glass substrate. In this study, we observed that the MILC behavior changed with abrupt variation of the amorphous silicon active pattern width. We explained these phenomena with the novel MILC mechanism model. The 10 nm thick Ni layers were deposited on the glass substrate having various amorphous silicon patterns. Then, we annealed the sample at $550^{\circ}C$ with rapid thermal annealing(RTA) apparatus and measured the crystallized length by optical microscope. When MILC progress from narrow-width-area(the width was $w_2$) to wide-width-area(the width was $w_1$), the MILC rate decreased dramatically and was not changed for several hours(incubation time). Also the incubation time increased as the ratio, $w_1/w_2$, get larger. We can explain these phenomena with the tensile stress that was caused by volume shrinkage due to the phase transformation from amorphous silicon to crystalline silicon.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.188-188
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• 2003

본 연구에서는 Pd에 의한 MILC(Metal induced lateral crystallization)시 수소 플라즈마 처리의 영향에 따른 결정화 양상 및 TFT에 미치는 효과에 대해 고찰하였다. 현재까지 Pd에 의한 MILC에 의해 Channel이 제작된 TFT는 Transfer curve 특성을 보이지 않는것으로 보고되어 있다. 이는 바늘 모양의 성장으로 인해 결정질 부분이 다 채워지지 않고 비정질 부분이 존재하고, 결정질 내에 쌍정 결함이 존재하기 때문인 것으로 알려져 있다. 본 실험에서는 수소 플라즈마 처리 시 Pd에 의한 MILC 양상이 수소 플라즈마 처리를 하지 않은 경우와는 달리 측면 결정화 양상이 바늘 모양의 성장 모습을 보이지 않고, 결정질 부분이 다 채워진 평탄한 모양의 성장 모습을 보였다.