• 멤브레인
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• 제25권2호
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• pp.85-98
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• 2015

고분자의 용이한 가공성과 우수한 투명성, 그리고 합리적인 비용 효율로 인해 식품 포장 산업에서 금속이나 유리용기들을 고분자 기반의 포장 소재들로 대체하려는 경향이 전 세계적으로 널리 퍼지고 있다. Barrier 고분자들은 산소, 이산화탄소, 수증기 등 대기 가스에 대한 낮은 투과성을 나타내고 있어 식품 포장 산업 이용에 유용하다. 이러한 식품 포장 산업의 전반적인 추세와 함께, 산소에 민감한 주스, 착향 음료, 그리고 에너지 음료 등 새로운 식품 산업의 성장으로 인해 고성능의 barrier 특성, 특히 $O_2$와 $CO_2$에 대해 낮은 투과성을 지닌 고분자 포장 소재의 개발이 시급한 상황이다. 기존의 고분자에 기반한 barrier의 성능 향상은 새로운 식품 포장 산업에 급격한 변화를 줄 것이다. 본 총설에서는 (1) antiplasticization을 유도한 barrier 소재들, (2) antiplasticization과 crystallization을 사용한 barrier 성능 상승 효과, (3) 새로운 barrier 고분자들, (4) 나노합성 소재, (5) 혼합 고분자 등과 더불어, 차세대 포장 소재들의 특성 분석을 소개하고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• 한국표면공학회지
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• 제21권2호
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• pp.53-67
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• 1988

The high temperature corrosion of Fe-C alloys were studied at I atm SO gas in the temperature range 500~80$0^{\circ}C$ by means of a thermogravimetric analysis. The Na2SO4 induced high tempwrature corrosion rate was also measured at atm O2 gas under above the temperature renge. The reaction products were identified with the aid of X-ray diffraction technique, and micostruction of the alloy/scale interface was observed with a optical microscope and SEM. The experimental results were disussed by the themodeynamic calcutions. Under above the experimental condition. the reaction rates decrbon with increasing carbon content. The transfer of Fe ion was limited by a residue of carbon precipitated at alloy scale interface due to the oxidation of Fe-C alloys at alloy surface. The effect of cold working on reaction rate was different between the Fe containing low carbon and Fe-C Alloy containing carbon above 0,73 wt%. In a cold worked iron containing low carbon content, the crystallization of metal surface leads to the poor adherence between the alloy and the cavity formed between the alloy and scale. The outward diffusion of ion through the scale is estimated to be hindered by the cavity formed between the scale, consequently decreasing reaction rate. In the case Fe-C containing carbon above 0.73 Wt% alloy, the reaction rate was little affected by cold working, because the effect of content on reaction rats is greater than the effect of cold working.

• 대한전자공학회논문지SD
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• 제37권12호
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• pp.29-34
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• 2000

금속유도 측면 결정화에 의해 제작된 다결정 실리콘 박막 트랜지스터(Thin Film Transistor; TFT)의 전기적 스트레스의 효과에 대해 연구하였다. MILC로 제작된 TFT에 전기적 스트레스가 인가될 때, off-state 전류가 100배에서 10000배까지 감소한다. 그러나 전기적 스트레스를 인가한 소자를 관상로에서 열처리를 할 경우 열처리온도가 증가할 수록 off-state 전류가 다시 증가했다. 열처리온도에 따른 off-state 전류의 의존성으로부터 MILC 다결정 실리콘 박막내 트랩준위의 활성화에너지(0.34eV)를 얻어냈다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.