• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
• /
• pp.96-99
• /
• 1993

대면적 액정 표시판 (Liquid Crystal Display:LCD) panel내(內)의 구동소자인 비정질 실리콘 (amorphous silicon) 박막 트랜지스터 (Thin Film Transistor:TFT)의 구동신호전달 소자특성 향상을 위한 본(本) 연구의 목적은 액정 panel TFT 제조공정 상(上)의 증착금속 전극박막들의 Test Elements Group(TEG) metal line pattern별(別) 전기적 저항특성 평가에 있다. 현(現) TFT 전극용(用)으로 개발이 진행 중(中)인 Aluminum(Al), Tantalum(Ta) 및 Chromium(Cr) 이 특성평가 대상 금속 박막으로 선정 되었으며, 이들 금속막의 증착 thickness 와 TEG metal line width가 저항특성 변수로 성립 되었다. 본(本) 실험을 통해 금속 박막의 TEG line width별(別) 체적(體積)저항 (bulk resistance), 면(面)저항(sheet resistance), 비(比)저항 (resistivity) 및 기판 상(上)의 metal pattern 위치 변화에 따른 전기적 저항 uniformity 특성변화 평가가 있었다. TEG metal line 측정 변위에 따른 저항율의 선형변화 특성도 연구 되었으며, metal line별(別) 전기적 연속, 불연속 배선 단락 특성(electrical continuity test) 관찰도 있었다.

• 대한전자공학회논문지SD
• /
• 제41권1호
• /
• pp.15-20
• /
• 2004

산화막위에 증착된 금속박막과 산화막과의 계면효과를 조사하였다. 산화막으로는 현재 반도체소자제조공정에 많이 사용되고 있는 BPSG 산화막과 PETEOS 산화막을 사용하였다. 이 두 종류의 산화막위에 적층구조의 금속박막을 형성한 후, 금속박막의 열처리에 의한 계면의 영향을 SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy)를 사용하여 조사하였다. BPSG 산화막위에 증착된 금속박막을 $650^{\circ}C$ 이상에서 RTP anneal을 한 경우, BPSG 산화막과 금속박막의 계면결합상태가 좋지 않았고, BPSG 산화막과 금속박막의 계면에 phosphorus가 축적된 영역을 확인하였다. 반면에 PETEOS 산화막위에 증착된 금속박막의 경우, RTP anneal 온도에 관계없이 계면결합상태는 좋았다. 본 연구에서 BPSG 산화막위에 금속박막을 증착할 경우 RTP anneal 온도는 $650^{\circ}C$ 보다 작게 하여야 함을 알 수 있었다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.16-18
• /
• 2002

We attempted to fabricate a dendrimer Langmuir-Blodgett(LB) films containing 48 pyridinepropanol functional end group. As the pyridinepropanol functional group could form a complex structure with metal ions. In this study the samples for electrical measurement were fabricated to two types metal complexes with $Pt^{4+}$ and $Fe^{2+}$ ions by LB method. And we have investigated the surface activity at the air-water interface as well as the electrical properties for the monolayers of pure G4-48PyP dendrimer and its complex with metal ions($Pt^{4+}$ and $Fe^{2+}$ ions). In the surface pressure-area($\pi-A$) isotherms of the dendrimers, the stable condensed films formed at the air-water interface and the metal ions effect showed the difference on molecular behavior. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage(I-V) characteristics of metal/dendrimer LB films/metal(MIM) structure. In conclusion, it is demonstrated that the metal ion around G4-48PyP dendrimer can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.362-365
• /
• 2002

Hf thin films were deposited on bottom metal using a RF magnetron sputtering method followed by oxidation and annealing in O$_2$ and N$_2$ ambient, respectively. Various top metal electrodes (i.e., Al, Au, and Cu) were deposited by evaporation, and their roles on physical and electrical properties were investigated. Using the XRD, SEM and AFM techniques, we confirmed that the grain size of HfO$_2$ thin films enlarges as a function of oxidation temperature, increasing dielectric constant. However, other electrical properties (e.g., tan) deteriorateas a consequence. The dielectric constant and tan of HfO$_2$ thin films oxidized at 500 $^{\circ}C$ were 17-25 and 3${\times}$10-3 - 2x10-2, respectively, in the frequency range of 1 Hz to 1 MHz. The leakage current density was less than 1${\times}$10-8A/cm2 up to 0.7 MV/cm. In addition, electrical properties of HfO$_2$ thin films (e.g., the dielectric constant, leakage current and tan $\delta$) depend on top metal electrode. We showed that Al top metal electrode results in the best result.

• 한국전기전자재료학회논문지
• /
• 제15권6호
• /
• pp.518-523
• /
• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.107-110
• /
• 2002

The electrophoretic deposition (EPD) technique have been applied to fabricating superconducting films and wires in former researches of our Lab. However, the particles of EPD films were usually deposited random1y on the metal substrate, the vertically combined a.c and d.c fields were applied to the EPD electrodes for orienting and densifying the particles of high $T_{c}$ superconducting deposition film on the substrate metal. Therefore, the surface states of EPD films by this combined fields could be oriented and affect to the electric properties increasing of superconducting films. The proposed method modified by a.c. assisted field to the conventional electrophoresis system was suitable to obtain improved properties with particle oriented deposition and densification.

• Bulletin of the Korean Chemical Society
• /
• 제28권2호
• /
• pp.188-192
• /
• 2007

In this work, the effects of chemical treatment of polyimide films were studied by FT-IR, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and contact angles. The adhesion characteristics of the films were also investigated in the peel strengths of polyimide/aluminum films. The increases of surface functional groups of KOH-treated polyimide films were greatly correlated with the polar component of surface free energy. The peel strength of polyimides to metal substrate was also greatly enhanced by increasing the KOH treatment time, which can be attributed to the formation of polar functional groups on the polyimide surfaces, resulting in enhancement of the work of adhesion between polymer film and metal plate.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
• /
• pp.243-245
• /
• 1994

We synthesized the conducting diamond-like carbon films using plasma-enhanced chemical vapor deposition and analysized its characteristics. We obtained the metal-containing diamond-like carbon films using $CH_4$, Ar gas and aluminum target. We observed the changes of electrical conductivity, microhardness and surface morphology according to $Ar/CH_4$ ratio, substrate bias and target bias. As the target bias and $Ar/CH_4$ ratio increase and the substrate bias decreases, the electrical conductivity and surface roughness increase. The increase of hardness involves decrease of the electrical conductivity. Metal-containing amorphous hydrogenated carbon films show improved adhesion on metal substrates compared to pure diamond-like carbon films and better electrical conductivity.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2003년도 춘계학술발표회 초록집
• /
• pp.53-53
• /
• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.124-124
• /
• 2003

To improve the electrochemical properties of thin-film LiCoO$_2$ cathodes, metal oxides were coated on the LiCoO$_2$ thin films using f sputtering. Galvanostatic charge-discharge experiments showed the enhanced cycling behaviors in the metal-oxide coated LiCoO$_2$ thin films than the uncoated ones. These results are because the metal-oxide coating layer suppresses the degradation of Li-diffusion kinetics during cycling, which is related to the protection of cathode surface from the electrolytes [l-3]. The variation in the metal-oxide coating thickness ranging from 10 to 300 nm did not affect the electrochemical properties. Changes of lattice constants in the coated and bare LiCoO$_2$ thin films at different charged states will also be discussed.